Matsushita Electric Industrial Co., Ltd.

Yoshikazu Suehiro

Hayami Matsunaga

Masao Iwata

Izumi Okamoto

Hideo Kurokawa

Takeo Yasuho

Kazuo Takeda

Hitonobu Furukawa

Yasuhiko Yokota

Shuji Ida

Ryoichi Katsuragawa

The present invention relates to integrated circuit devices for use in such civilian equipments as an electronic equipment, electrical equipment, communication equipment and measuring and controlling equipment, and its object is to provide an integrated circuit device which has an excellent heat radiating characteristic. Then, in order to achieve this object, it includes, on a metal board,, a power supply,and a plurality of pin terminals,and includes, on a multi-layer circuit wiring board,, mounted component parts comprising a cache controller,, a cache memory section,, a data buffer LSI section,, a CPU chip,and a connector,; and, by mounting a reverse surface of the multi-layer circuit wiring board,having the mounted component parts provided thereon on the metal board,having the power supply,provided thereon through the pin terminal group,, it is possible to provide an integrated circuit device in which the degree of integration is enhanced and the heat radiating characteristic of heat generating component parts is excellent.

Integrated circuit device on metal board with CPU power converter

Two modules, each of which has a plurality of memory IC chips installed therein, are stacked to form a module unit. Furthermore, a plurality of the module units are installed on a mother board so as to form a multilevel semiconductor integrated circuit device. By further stacking a specific module containing an IC chip for replacing the functions of a defective chip, a repair process can be conducted more easily and efficiently. Alternatively, instead of the module units, a plurality of TAB packages stacked in a multilayer structure are installed on the mother board. Outer leads of each of the TAB packages and terminal pads on the circuit board are respectively connected to each other in a one-to-one way. Thus, only a defective TAB package need be taken away and consequently, efficiency in the repair process further improves.

Multilevel semiconductor integrated circuit device

A plurality of memory modules are stacked so as to form a multilayer integrated memory circuit. All of the memory modules have a plurality of bare memory IC chips mounted thereon, and have the same structure, the same circuit configuration and the same terminal arrangement in lead frames with each other. Each of the memory modules to be stacked in each layer is rotated by 90.degree., 180.degree. or 270.degree. before being stacked and connected to each other. Thus, in the multi-layered memory circuit, it is possible that signals can be selectively input/output to/from a particular layer in the multilayer structure, although the lead terminals of each of memory modules has the same configuration and the same arrangement with each other. As a result, a small-size integrated memory circuit device with a large memory-capacity can be provided, which can be fabricated easily and efficiently. A higher processing speed of digital computers can be also achieved.

Semiconductor integrated circuit module and a semiconductor integrated

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Ikoma, Japan

Yoshikazu Suehiro