Renesas Electronics Corporation

Yoshikazu Shimote

Shinji Baba

Kazuyuki Nakagawa

Toshihiro Iwasaki

Michitaka Kimura

Takeumi Kato

Takanori Okita

The joint reliability in flip chip bonding of a semiconductor device is enhanced. Prior to flip chip bonding, fluxis applied to the solder bumpsfor flip chip bonding over a substrate and reflow/cleaning is carried out and then flip chip bonding is carried out. This makes is possible to thin the oxide film over the surfaces of the solder bumpsand make the oxide film uniform. As a result, it is possible to suppress the production of local solder protrusions to reduce the production of solder bridges during flip chip bonding and enhance the joint reliability in the flip chip bonding of the semiconductor device.

Semiconductor device and manufacturing method therefor

In a semiconductor device (SP) according to an embodiment, a solder resist film (first insulating layer, SR) which is in contact with the base material layer, and a resin body (second insulating layer,) which is in contact with the solder resist film and the semiconductor chip, are laminated in between the base material layer (CR) of a wiring substrateand a semiconductor chip (). In addition, a linear expansion coefficient of the solder resist film is equal to or larger than a linear expansion coefficient of the base material layer, and the linear expansion coefficient of the solder resist film is equal to or smaller than a linear expansion coefficient of the resin body. Also, the linear expansion coefficient of the base material layer is smaller than the linear expansion coefficient of the resin body. According to the above-described configuration, damage of the semiconductor device caused by a temperature cyclic load can be suppressed, and thereby reliability can be improved.

Semiconductor device and manufacturing method thereof

Growing community of inventors

Kanagawa, Japan

Yoshikazu Shimote