Matsushita Electronics Corporation

Matsushita Electric Industrial Co., Ltd.

Yoshikazu Sano

Sumio Terakawa

Yoko Shigeta

Tomoko Ohtagaki

Hiromitsu Aoki

Koji Shimomura

Michihiro Yamagata

Yasuhiro Tanaka

Hiroshi Okamoto

Takumi Yamaguchi

Tomohiko Sasano

Tomoko Komatsu

Masaji Asaumi

Michiyo Ichikawa

Yoshikazu Chatani

Tomoya Tanaka

Eiichi Tsujii

Hiromitu Aoki

In a lens array, a multiplicity of condenser lenses, each in a convex lens form, are arrayed in vertical and horizontal directions so as to correspond to pixel regions, respectively, and each condenser lens, when viewed from a direction perpendicular to a condenser lens-arrayed plane, takes a planar shape formed with a four straight sides along four sides of the pixel region and four circular arcs extending between the respective straight sides. A center of the four circular arcs substantially coincides with a center of the corresponding pixel region. This ensures an increase in area covered with the condenser lens in the pixel region, thereby causing more light rays to enter the condenser lens. In addition, a radius of curvature necessary for collecting can be obtained more easily. Consequently, light rays can be efficiently collected and guided to light receiving sections or the like provided in the pixel regions. Accordingly, sensitivity is improved when such a lens array is used in a solid-state imaging element, while luminance of a screen is improved when it is used in a panel display element. Besides, such a lens array is easily manufactured.

Lens array

When light enters a solid-state imaging device obliquely, the light passing an optical path which misses a photodiode part is gathered by a second microlens located in the lower part which directs the light more vertically. A convergent rate of the oblique incident light can be prevented from decreasing. In this way, a solid-state imaging device having high sensitivity ratio, less smear (stray light), and excellent image characteristics can be provided. A metal with a high melting point or a metal silicide film thereof is used as a photo-shielding film. After making the photo-shielding film thinner, a Boro-Phospho-Silicate-Glass (BPSG) film is provided on the entire surface. Then, the second microlens is directly formed on an element provided with a surface protective coating comprising SiO.sub.2, SiON, or SiN, and on top of that, a color filter and an intermediate transparent film are formed, and then a first microlens is formed thereon. The second microlens located in the lower part is formed using a material having a larger refractive index than that of the intermediate transparent film or the BPSG film.

Solid-state imaging device and method of manufacturing the same

Solid-state image sensing apparatus and manufacturing method thereof

Solid-state imaging device with dual lens structure

The method of manufacturing a solid state imaging device of the invention comprises a step of adding carboxylate as a dyeing assistant auxiliary to the aqueous dyestuff solution when forming dyeing layers of acrylic-based resin on a semiconductor substrate on which a solid state imaging element is formed. Therefore this invention provides a solid state imaging device with a color filter which is dyed densely, is flat, thin, and excellent in spectral characteristics. A transparent planarization resin layer (the material is e.g. acrylic) is formed on a semiconductor substrate, and a shading layer and a planarization resin layer are successively formed thereon. A synthetic resin is prepared and added photosensitizer of diazo compound. On the above-mentioned planarization resin layer, the layer of the synthetic resin is coated to be 0.2 to 0.8 .mu.m thick, for example, by a spin coat method. Then the synthetic resin is selectively exposed with a stepper, and developed to form patterns of a color filter. Then, the resin with the pattern is dyed to be a cyan layer. In the step, ammonium acetate and a urea compound are added to the aqueous dyestuff solution.

Method of manufacturing a solid state imaging device

On the surface of a protecting layer mounted on a solid state imaging devices substrate, transparent gap filler layers and a transparent flattening layer are formed to flatten a surface of overlying protecting layer. On a surface of the transparent flattening layer, color filters of red, blue and yellow are formed. The color filters are made of synthetic photosensitive material. By using the synthetic photosensitive material, the color filters are formed with good shape and precision. All of the color filter show good photo spectrography and uniform characteristics. For the reasons, excellent characteristics of the solid state imaging device are provided which are free form image inferiority caused by flicker, shading, dust and so forth.

Solid state imaging device and method of manufacturing same

The method of manufacturing a solid state imaging device of the invention comprises a step of adding carboxylate as a dyeing assistant auxiliary to the aqueous dyestuff solution when forming dyeing layers of acrylic-based resin on a semiconductor substrate on which a solid state imaging element is formed. Therefore this invention provides a solid state imaging device with a color filter which is dyed densely, is flat, thin, and excellent in spectral characteristics. A transparent planarization resin layer (the material is e.g. acrylic) is formed on a semiconductor substrate, and a shading layer and planarization resin layer are successively formed thereon. A synthetic resin is prepared and added photosensitizer of diazo compound. On the above-mentioned planarization resin layer, the layer of the synthetic resin is coated to be 0.2 to 0.8 .mu.m thick, for example, by a spin coat method. Then the synthetic resin is selectively exposed with a stepper, and developed to form patterns of a color filter. Then, the resin with the pattern is dyed to be a cyan layer. In the step, ammonium acetate and a urea compound are added to the aqueous dyestuff solution.

A first P-type diffusion layer is formed on a semiconductor substrate. A photodiode is formed thereon. A transfer channel is formed on the semiconductor substrate. Agate insulating film is grown from a silicon oxide film on the semiconductor substrate. A transfer gate electrode is formed on the gate insulating film by patterning polysilicon. A light-shielding film of a metallic evaporation film is formed on the transfer gate electrode so that light cannot enter the transmission channel only to be a smear component. A difference in level of about 2 to 4 .mu.m is formed on the semiconductor substrate of the transfer channel due to the transfer gate electrode and the light-shielding film. An underlying smooth layer is formed to smooth the surface difference in level, and a first light-shielding layer is formed on it. A transparent film is formed on it, and a third light-shielding layer is formed via a second light-shielding layer and a transparent film. Further, a transparent film having the same material and the same film thickness as the above transparent film covers the third light-shielding layer, and then is smoothed. An on-chip lens is formed on it. Thus, a negative influence of a flare light can be prevented.

On-chip screen type solid state image sensor and manufacturing method

A method of evaluating the characteristics of a solid state image sensor measures the unit cell output values of the sensor and assigns the output values to a predetermined rank, and counts the number of unit cells cumulatively in each rank, and then, by regarding the frequency distribution profile of the unit cell output values obtained in such way as the intrinsic electrical characteristics of the sensor, judges the picture quality of the sensor by using this frequency distribution profile.

Method of evaluating a solid state image sensor using frequency

This invention relates to a camera with development function used in microscophic photography, in which a cover is disposed at the opening of a compartment case for containing developed films, and the opening is closed by this cover after containing developed films, and then the compartment case is dismounted from the camera main body. Thus, paper fibers and chemical particles used in the films will not drift in the air. Therefore, when used in a clean room, the room air will not be contaminated. Furthermore, the camera of this invention possesses various features suited for use in the clean room, such as the transparent compartment case so that the exposure and focus precision can be checked from outside the compartment case, and conductive treatment of the compartment case so as to prevent attraction of dust.

Growing community of inventors

Osaka, Japan

Yoshikazu Sano