Idemitsu Kosan Company, Limited

Yoshikazu Nagasaki

Hiroshi Tokailin

Tadao Shibuya

Kazuyoshi Inoue

Mitsuru Eida

Toshio Sakai

Emi Kawashima

Yuki Tsuruma

Yoshihiro Ueoka

Takashi Sekiya

A structure including a metal oxide semiconductor layer and a noble metal oxide layer, wherein the metal oxide semiconductor layer and the noble metal oxide layer are adjacent to each other, and a film thickness of the noble metal oxide layer is more than 10 nm.

Structure, method for manufacturing same, semiconductor element, and electronic circuit

An organic EL element comprising; an anode, a cathode, and an organic layer sandwiched therebetween containing at least an emitting layer, wherein a ratio, [In3d]/[In3d], is from 0.9 to 1.2 wherein [In3d]is the half band width of a spectral peak derived from a 3dorbit of an In atom in the surface of the anode, and [In3d]is the half band width of a spectral peak derived from a 3dorbit of an In atom in the interior of the anode, the spectral peaks being measured by X-ray photoelectron spectroscopy (XPS): and the method for the production thereof.

Organic electroluminescence element and production method thereof

The present invention concerns a method of forming one or more thin films on a substrate by depositing two or more materials by vacuum evaporation, comprising, depositing each material under such control that ni value of the each material is k&#xb1;0.5 wherein k is a constant from 2 to 5, when relationship between a deposition position and a film thickness of a material i on the substrate is approximated by the following equation (1):D/D(L/L)cos&#x3b8;&#x2003;&#x2003;(1)wherein Lis a distance from an evaporation source to a plane of the substrate in a perpendicular direction, Dis a film thickness of the material i at an intersection point of a perpendicular line from the evaporation source to the plane of the substrate, and Dis a film thickness of the material i at a position on the substrate which is apart from the evaporation source by a distance Lin a direction of an angle &#x3b8;against the perpendicular line. By the method, a homogenous thin film layer for an element can be formed even on a substrate having large screen.

Method for depositing thin film for element, and organic electroluminescence element

An electrode substrate comprising; an electrode comprising a compound containing an In atom and a substrate body, wherein a half band width ratio [In3d]/[In3d]is from 0.9 to 1.2 wherein [In3d]is a half band width of a 3dorbit spectral peak of an In atom in the surface of the electrode, and [In3d]is a half band width of a 3dorbit spectral peak of an In atom in the interior of the electrode, the spectral peaks being measured by X-ray photoelectron spectroscopy: and the method for the production thereof.

Electrode substrate and production method thereof

An organic EL element comprising: an anode, a cathode, and an organic layer sandwiched therebetween containing at least an emitting layer, wherein a ratio, &lsqb;In3d &rsqb; /&lsqb;In3d &rsqb; , is from 0.9 to 1.2 wherein &lsqb;In3d &rsqb; is the half band width of a spectral peak derived from a 3d orbit of an In atom in the surface of the anode, and &lsqb;In3d &rsqb; is the half band width of a spectral peak derived from a 3d orbit of an In atom in the interior of the anode, the spectral peaks being measured by X-ray photoelectron spectroscopy (XPS): and the method for the production thereof.

Method for forming thin-film layer for device and organic electroluminescence device

An organic electroluminescent device including a lower electrode, an organic light-emission medium, and an upper electrode on a support substrate, wherein the water content of the organic light-emission medium does not exceed 0.05 wt. %. By so controlling the water content of the organic light-emission medium, it is possible to prevent shrinkage of a light-emission area based on production of non-emission parts or non-emission spots for a long time at both high temperature and room temperature conditions. A method of making the organic electroluminescent device is disclosed also.

Growing community of inventors

Sodegaura, Japan

Yoshikazu Nagasaki