Kabushiki Kaisha Toshiba

Yoshikazu Iizuka

Mami Kodama

A semiconductor device failure analysis system according to an embodiment of the present invention includes a memory configured to be capable of retaining an initial display information; and a control unit configured to generate a first image based on a configuration information of the semiconductor device and a plurality of fail bit information of the semiconductor device, the semiconductor device including a three-dimensional memory cell array, and to generate a second image from the first image based on the initial display information, the second image corresponding to part of the plurality of fail bit information. The semiconductor device failure analysis system according to the embodiment further includes a display configured to be capable of initially displaying the second image.

Semiconductor device failure analysis system and semiconductor memory device

According to one embodiment, a failure analyzing device includes a classifying unit that classifies a failure type in a fail bit map corresponding to each layer, a storage unit that stores a rule to combine failed cells of different layers, and a determining unit that groups a classification result matched with the rule among classification results based on the classifying unit. The rule includes a base point failure, an association failure becoming a combination object of the base point failure, a combination condition defining a relationship between the base point failure and the association failure, and a combination failure name. The determining unit extracts the base point failure from the classification result of one layer, extracts the association failure matched with the combination condition from the classification results of the other layers, groups the extracted base point failure and association failure, and provides the combination failure name.

Failure analyzing device and failure analyzing method

According to one embodiment, electrical test results of a semiconductor memory arrayed in a logical address order are stored in a first memory secured in a main memory, a plurality of second memory areas in each of which loading and storing of each data in a unit size is performed is secured in the main memory, FBMs in which pass/fail information is arrayed in a physical address order are generated based on different parts of the electrical test results stored in the first memory area, respectively, the FBMs generated from the different parts of the electrical test results are stored in the second memory areas, respectively, and the FBMs stored in the second memory areas, respectively, are output.

Failure analysis method, failure analysis apparatus, and computer program product

A semiconductor apparatus comprising: a plurality of memory circuits each including a memory and an input/output selector, the memory having a plurality of memory cells and a plurality of input/output circuits respectively corresponding to the memory cells; and an incorporated self-test circuit that executes a quality test for the memory, wherein the input/output selector selects one of the input/output circuits and successively outputs data signals to the incorporated self-test circuit, the data signals read by the one of the input/output circuits from the corresponding memory cells.

Semiconductor apparatus and testing method

A fault position identification system for a semiconductor device includes: a storage unit storing test data of the semiconductor device; a test result analyzer generating test parameters of the semiconductor device, based on failure information of a failure occurred in the semiconductor device; an emission controller controlling the semiconductor device to perform a circuit operation in which the failure occurs, by transmitting the test data corresponding to the test parameters to the semiconductor device; and an observation apparatus observing light emitted from a fault position and identifying the fault position.

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Kanagawa, Japan

Yoshikazu Iizuka