Nec Lcd Technologies, Ltd.

Yoshikazu Hatazawa

Satoshi Ihida

Kyounei Yasuda

Manabu Oyama

Jukoh Funaki

A method of fabricating a thin film transistor, includes the steps of (a) forming a gate electrode on an electrically insulating substrate, (b) forming a gate insulating film on the electrically insulating substrate, covering the gate electrode therewith, (c) forming a semiconductor layer on the gate insulating film above the gate electrode, (d) forming source and drain electrodes both making electrical contact with the semiconductor layer, (e) patterning the semiconductor layer into a channel, (f) applying first plasma to the semiconductor layer through the use of a first gas, and (g) applying second plasma to the semiconductor layer through the use of a second gas, and (h) forming an electrically insulating film covering the semiconductor layer therewith.

Growing community of inventors

Akita, Japan

Yoshikazu Hatazawa