Tokyo Electron Limited

Honda Motor Co., Ltd.

Yoshikazu Furusawa

Mitsuhiro Okada

Kazuya Takahashi

Kazuhide Hasebe

Katsuhiko Komori

Daisuke Suzuki

Masaki Kurokawa

Shingo Hishiya

Takehiko Fujita

Norifumi Kimura

Hiroyuki Kojima

Akinobu Kakimoto

Akira Tokito

Teruyuki Hayashi

Koji Akiyama

Jun Adachi

Misako Saito

Hiroyuki Hayashi

Akitake Tamura

Kota Umezawa

Kimiya Aoki

Hiromasa Yonekura

Syoichi Sato

A shift drum angle detecting device includes: a first angle sensor configured to output a first sensor output value corresponding to a shaft rotational angle of a first sensor shaft integrally rotating with a shift drum; and a second angle sensor configured to output a second sensor output value corresponding to a shaft rotational angle of a second sensor shaft rotating at an increased speed as a result of a speed increasing mechanism increasing the rotation of the first sensor shaft. A first sensor switching angle where the maximum value and the minimum value of the first sensor output value are switched and a second sensor switching angle where the maximum value and the minimum value of the second sensor output value are switched are set to be different from each other in rotational angle of the shift drum. Such device precisely detects any rotational angle of the shift drum.

Shift drum angle detecting device for transmission

There is provided a substrate processing apparatus, including: a process vessel configured to accommodate a plurality of substrates; a gas supply part configured to supply a gas into the process vessel; an exhaust part configured to exhaust the gas in the process vessel; and a scavenging part configured to scavenge an interior of the gas supply part, wherein the gas supply part is connected to the scavenging part.

Substrate processing apparatus, injector, and substrate processing method

A method of performing a film formation on target substrates in a state where a substrate holder for holding the target substrates in a shelf shape is loaded into a vertical reaction container from a lower opening thereof and the lower opening is closed by a lid. The method includes: performing the film formation on the target substrates by supplying a processing gas into the reaction container; opening the lid and unloading the substrate holder from the reaction container; performing the film formation on a bottom portion of the reaction container including an inner surface of the lid by closing the lower opening with the lid and supplying a coating gas different from the processing gas into the reaction container; and performing the film formation on the target substrates by opening the lid, loading the substrate holder into the reaction container, and supplying the processing gas into the reaction container.

Film forming method and vertical thermal processing apparatus

The present disclosure provides a silicon film forming method for forming a silicon film on a workpiece having a processed surface, including: forming a seed layer by supplying a high-order aminosilane-based gas containing two or more silicon atoms in a molecular formula onto the processed surface and by having silicon adsorbed onto the processed surface; and forming a silicon film by supplying a silane-based gas not containing an amino group onto the seed layer and by depositing silicon onto the seed layer, wherein, when forming a seed layer, a process temperature is set within a range of 350 degrees C. or lower and a room temperature or higher.

Silicon film forming method, thin film forming method and cross-sectional shape control method

There is provided a method of crystallizing amorphous silicones, which includes: forming a stacked structure of a second amorphous silicon film followed by a first amorphous silicon film on an underlay film, the second amorphous silicon film having a faster crystal growth rate than the first amorphous silicon film; and performing a crystallization treatment on the stacked structure to crystallize silicones contained in at least the second amorphous silicon film.

Amorphous silicon crystallizing method, crystallized silicon film forming method, semiconductor device manufacturing method and film forming apparatus

A method of vapor-diffusing impurities into a diffusion region of a target substrate to be processed using a dummy substrate is provided. The method includes loading the target substrate and the dummy substrate in a substrate loading jig, accommodating the substrate loading jig loaded with the target substrate and the dummy substrate in a processing chamber of a processing apparatus, and vapor-diffusing impurities into the diffusion region of the target substrate in the processing chamber having the accommodated substrate loading jig. The vapor-diffused impurities are boron, an outer surface of the dummy substrate includes a material having properties not allowing boron adsorption.

Method of vapor-diffusing impurities

The impurity diffusion method includes: transferring an object on which the thin film is formed into a processing chamber (operation); raising a temperature of the object to a vapor diffusion temperature in the processing chamber (operation); and supplying an impurity-containing gas that contains the impurities into the processing chamber, together with an inert gas and diffusing the impurities in the thin film formed on the object of which the temperature is raised to the vapor diffusion temperature (operation), wherein in the operation, an impurity diffusion acceleration gas for accelerating the diffusion of the impurities into the thin film is supplied into the processing chamber, together with the impurity-containing gas and the inert gas.

Impurity diffusion method, substrate processing apparatus, and method of manufacturing semiconductor device

A method for using an apparatus configured to form a germanium-containing film includes performing a first film formation process for forming a first product film containing germanium by CVD on a product target object placed inside a reaction container, a first cleaning process for etching the film formation by-product, a second cleaning process for removing residual germanium from inside the reaction container, and a second film formation process for forming a second product film containing no germanium by CVD on a product target object placed inside the reaction container, in this order. The second cleaning process is performed by exhausting gas from inside the reaction container with no product target object placed therein, supplying a second cleaning gas containing an oxidizing gas and hydrogen gas into the reaction container, and heating an interior of the reaction container thereby activating the second cleaning gas.

Method for using apparatus configured to form germanium-containing film

A vertical CVD apparatus is arranged to process a plurality of target substrates all together to form a silicon germanium film. The apparatus includes a reaction container having a process field configured to accommodate the target substrates, and a common supply system configured to supply a mixture gas into the process field. The mixture gas includes a first process gas of a silane family and a second process gas of a germane family. The common supply system includes a plurality of supply ports disposed at different heights.

Vertical CVD apparatus for forming silicon-germanium film

Heat dissipation deterrence link for semiconductor manufacture

In a film-formation method for a semiconductor process, a silicon germanium film is formed on a target substrate by CVD in a process field within a reaction container. Then, a silicon coating film is formed to cover the silicon germanium film by CVD in the process field, while increasing temperature of the process field from the first temperature to a second temperature. Then, a silicon film is formed on the coating film by CVD in the process field.

Film formation method and apparatus for semiconductor process

A thermal treatment apparatusincludes a reaction tubefor containing waferscontaminated with organic substances having a heatercapable of heating the reaction tube; a first gas supply pipefor carrying oxygen gas into the reaction tube; and a second gas supply pipefor carrying hydrogen gas into the reaction tube. Oxygen gas and hydrogen gas are supplied through the first gas supply pipeand the second gas supply pipe, respectively, into the reaction tube, and the heaterheats the reaction tubeat a temperature capable of activating oxygen gas and hydrogen gas. A combustion reaction occurs in the reaction tubeand thereby the organic substances adhering to the wafersare oxidized, decomposed and removed.

Method and apparatus for treating article to be treated

To provide a method for the formation of oxide films to form with advantage a high-quality oxide film having excellent uniformity in film thickness and film quality over the entire wafer. The method for the formation of oxide films comprises: the pretreatment process of forming a protective oxide film on the surface of a wafer positioned in a reaction vessel by performing oxidation treatment with radical oxidative species or an atmosphere containing radical oxidative species under depressurized conditions; and the oxide-film-formation process of forming an oxide film on the wafer by performing oxidation treatment at a predetermined temperature under depressurized conditions. The oxide-film-formation process is preferably performed following the pretreatment process in a continuous manner in the reaction vessel in which the pretreatment process is performed. The pretreatment process is preferably performed at a temperature lower than the temperature for the oxide-film-formation process and also preferably performed under depressurized conditions, the level of the depressurization being higher than the level for the oxide-film-formation process. A high-quality gate-insulating film for a transistor chip can be formed according to this method for the formation of oxide films.

Growing community of inventors

Nirasaki, Japan

Yoshikazu Furusawa