Tamura Corporation

Koha Co., Ltd.

Riken Corporation

Yoshikatsu Morishima

Kazuyuki Iizuka

Shinkuro Sato

Hideki Hirayama

Akito Kuramata

A nitride semiconductor template includes a GaOsubstrate, a buffer layer that includes as a main component AlN and is formed on the GaOsubstrate, a first nitride semiconductor layer that includes as a main component AlGaN (0.2&#x3c;x&#x2266;1) and is formed on the buffer layer, a second nitride semiconductor layer that includes as a main component AlGaN (0.2&#x2266;y&#x2266;0.55, y&#x3c;x) and is formed on the first nitride semiconductor layer, and a third nitride semiconductor layer that is formed on the second nitride semiconductor layer and includes a multilayer structure including an InAlGaN (0.02&#x2266;u1&#x2266;0.03, u1+v1+w1=1) layer and InAlGaN (0.02&#x2266;u2&#x2266;0.03, u2+v2+w2=1, v1+0.05&#x2266;v2&#x2266;v1+0.2) layers on both sides of the InAlGaN layer.

Nitride semiconductor template and ultraviolet LED

A method for manufacturing a semiconductor stacked body, and a semiconductor element including the semiconductor stacked body includes a semiconductor stacked body, including a GaOsubstrate having, as a principal plane, a plane on which oxygen atoms are arranged in a hexagonal lattice, an AlN buffer layer formed on the GaOsubstrate, and a nitride semiconductor layer formed on the AlN buffer layer.

Semiconductor stacked body, method for manufacturing same, and semiconductor element

Provided is a crystal layered structure having a low dislocation density on the upper surface of a nitride semiconductor layer on a GaOsubstrate, and a method for manufacturing the same. In one embodiment, there is provided a crystal layered structure including: a GaOsubstrate; a buffer layer comprising an AlGaInN (0&#x2266;x&#x2266;1, 0&#x2266;y&#x2266;1, 0&#x2266;z&#x2266;1, x+y+z=1) crystal on the GaOsubstrate; and a nitride semiconductor layer comprising an AlGaInN (0&#x2266;x&#x2266;1, 0&#x2266;y&#x2266;1, 0&#x2266;z&#x2266;1, x+y +z=1) crystal including oxygen as an impurity on the buffer layer. The oxygen concentration in a region having a thickness of no less than 200 nm on the nitride semiconductor layer on the side towards the GaOsubstrate is no less than 1.0&#xd7;10/cm.

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Tokyo, Japan

Yoshikatsu Morishima