Renesas Technology Corp.

Yoshika Kimura

Takeo Ishibashi

A method for forming resist patterns, and an overlying layer material and a semiconductor device used in the method for forming resist patterns, which can improve the dimensional uniformity of resist patterns by inhibiting the multiple interference of light beams within a resist film; improve the environmental resistance in a clean room or the like; and obtain resist patterns having rectangular sectional shapes by preventing the acid in the overlying layer material from diffusing into the resist. By using an overlying layer material containing a water-soluble low-molecular-weight acidic substance and a water-soluble photo base generator preventing the diffusion of the acidic substance into the resist, the base formed after exposure neutralizes the acids contained in the overlying layer material in nature, and the diffusion of the acid into the resist can be inhibited. As a result, since the elimination group of the protective group of the polymer on the surface of the resist is inhibited, and the cross-linking reaction in the resist can be inhibited, resist patterns having rectangular sectional shapes can be obtained.

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Tokyo, Japan

Yoshika Kimura