Sharp Kabushiki Kaisha Corporation

Sumitomo Electric Industries, Limited

Yoshika Kaneko

Takeshi Kamikawa

Kensaku Motoki

Eiji Yamada

Masahiro Araki

Masafumi Kondo

Daisuke Hanaoka

Kunihiro Takatani

Susumu Ohmi

Teruyoshi Takakura

The nitride semiconductor device includes an insulating layer and a metal layer formed on a nitride semiconductor layer. The insulating layer makes contact with the nitride semiconductor layer. A separation preventing layer is formed between the insulating layer and the metal layer so as to make contact with each of these layers. The separation preventing layer includes, as a main component, at least one oxide of a metal selected from a group of metals consisting of tungsten, molybdenum, chromium, titanium, nickel, hafnium, zinc, indium and yttrium.

Nitride semiconductor devices including a separation preventing layer

A nitride semiconductor laser device uses a substrate with low defect density, contains reduced strains inside a nitride semiconductor film, and thus offers a satisfactorily long useful life. On a GaN substrate () with a defect density as low as 10cmor less, a stripe-shaped depressed portion () is formed by etching. On this substrate (), a nitride semiconductor film () is grown, and a laser stripe () is formed off the area right above the depressed portion (). With this structure, the laser stripe () is free from strains, and the semiconductor laser device offers a long useful life. Moreover, the nitride semiconductor film () develops reduced cracks, resulting in a greatly increased yield rate.

Nitride semiconductor light-emitting device and method for fabrication thereof

A nitride semiconductor light-emitting device wherein a substrate or nitride semiconductor layer has a defect concentration region and a low defect density region other than the defect concentration region. A portion including the defect concentration region of the nitride semiconductor layer or substrate has a trench region deeper than the low defect density region. Thus by digging the trench in the defect concentration region, the growth detection is uniformized, and the surface planarity is improved. The uniformity of the characteristic in the wafer surface leads to improvement of the yield.

Nitride semiconductor light-emitting device

A nitride semiconductor light-emitting device includes a nitride semiconductor substrate of which at least part of a surface is formed from a nitride semiconductor and a nitride film semiconductor growth layer laid on the surface of the nitride semiconductor substrate. A carved region in the shape of a depressed portion may be formed on the surface of the nitride semiconductor substrate. The carved region may have an inverted tapered shape or a tapered shape in cross-section. Alternatively, or additionally, the nitride film semiconductor growth layer may include a gallium nitride film or an aluminum containing gallium nitride film where the nitride film semiconductor growth layer makes contact with the nitride semiconductor substrate. Alternatively, or additionally, the nitride film semiconductor growth layer may include a light-emitting portion formed at a location 20 &#x3bc;m or more away from the carved region.

Nitride semiconductor laser device and method for fabrication thereof

Provided is a method for fabricating a nitride semiconductor light-emitting device including a nitride semiconductor substrate having a groove and a ridge formed on the top surface thereof so as to extend in the shape of stripes and a nitride semiconductor growth layer consisting of a plurality of nitride semiconductor layers laid on top of the nitride semiconductor substrate. The method involves a step of forming a 10 &#x3bc;m or more wide flat region above at least either of the groove and ridge by forming the nitride semiconductor growth layer on top of the nitride semiconductor substrate so that the height of the nitride semiconductor growth layer laid above the groove is smaller than the height of the nitride semiconductor growth layer laid above the ridge.

Growing community of inventors

Funabashi, Japan

Yoshika Kaneko