Kabushiki Kaisha Toshiba

Toshiba Materials Co., Ltd.

Toshiba Lighting & Technology Corporation

Yoshihito Tsutsui

Masaaki Tamatani

Naomi Shida

Ryosuke Hiramatsu

Kazuaki Ootsuka

Masami Okamura

Mitsushi Ikeda

Kenichi Ito

Yukihiro Fukuta

Eiji Oyaizu

Hiroshi Onihashi

Kazuaki Otsuka

Hisayo Uetake

A method for manufacturing a fluorescent substance is provided, which includes mixing a raw material for Eu, a raw material for Si, at least one raw material powder of alkaline earth, and at least one selected from the group consisting of raw materials for La , Gd, Cs, and K to obtain a mixture of raw materials; pre-firing the mixture to obtain a baked material; mixing the baked material and firing in a reducing atmosphere consisting of a mixed gas of N2/H2 to obtain a first fired product; pulverizing the first fired product to obtain a pulverized first fired product; firing the pulverized first fired product in a reducing atmosphere consisting of N2/H2 to obtain a fluorescent substance consisting of an alkaline earth ortho-silicate; pulverizing the fluorescent substance to obtain a fluorescent particle; sieving the fluorescent particle; and providing a surface-covering material on a surface of the fluorescent particle.

Fluorescent substance and light-emitting device using the same

Disclosed is a fluorescent substance comprising an alkaline earth ortho-silicate, the fluorescent substance being activated by Eu, and further comprising at least one selected from the group consisting of La, Gd, Cs and K.

An field effect transistor includes a first semiconductor region, a gate electrode insulatively disposed over the first semiconductor region, source and drain electrodes between which the first semiconductor region is sandwiched, and second semiconductor regions each formed between the first semiconductor region and one of the source and drain electrodes, and having impurity concentration higher than that of the first semiconductor region, the source electrode being offset to the gate electrode in a direction in which the source electrode and the drain electrode are separated from each other with respect to a channel direction, and one of the second semiconductor regions having a thickness not more than a thickness with which the one of second semiconductor regions is completely depleted in the channel direction being in thermal equilibrium with the source electrode therewith.

Disclosed is a method for manufacturing a nitrogen-containing fluorescent substance comprising accommodating an oxide fluorescent substance containing two or more elements in a receptacle made of a material containing carbon, and sintering the oxide fluorescent substance in a mixed gas atmosphere containing nitrogen gas.

Fluorescent substance containing nitrogen, method for manufacturing the same, and light-emitting device

An X-ray detector () comprises an X-ray-electric charge conversion film () for directly converting into charges an incident X-ray that has passed through a subject () and is received, and a charge information reading section () for detecting charges produced by the X-ray-electric charge conversion film () as image signals. The X-ray-electric charge conversion film () consists essentially of a rare-earth compound containing at least one of rare-earth element and at least one of element selected from oxygen, sulfur, selenium and tellurium. The X-ray-electric charge conversion film () does not adversely affect human bodies and environment, and is excellent in sensitivity, film-forming feature and the like. Accordingly, the X-ray detector () which is provided with the improved X-ray detection sensitivity, detection accuracy and the like with environmental loads and the like decreased can be provided.

X-ray detector and X-ray examination apparatus using it

Disclosed is a fluorescent substance comprising an alkaline earth metal silicate having a composition represented by the following general formula (1):(SrBaCaEu)SiO&#x2003;&#x2003;(1)

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Chigasaki, Japan

Yoshihito Tsutsui