Mitsubishi Chemical Corporation

Yoshihito Sato

Kenji Shimoyama

Nobuyuki Hosoi

Katsushi Fujii

Kazumasa Kiyomi

Hideki Gotoh

Atsunori Yamauchi

Makiko Hashimoto

Toru Takeda

Akeo Kasakura

Shingetsu Yamada

Hiroaki Sakuta

Shuuji Suzuki

Jun Matsui

Nobuhiro Arai

Shinji Takai

Satosi Kikuchi

The invention provides a metal substrate and a light source device ensuring that a semiconductor chip working as a light source can be firmly joined by using a metal joining material, such that heat generated in the mounted semiconductor chip can be efficiently dissipated through a metal plate. The metal substrate includes a heat dissipating metal plate made of a metal except for Au, an insulating resin-made white film stacked on a part of the heat dissipating metal plate, and a light source mounting surface-forming layer stacked on another part of the heat dissipating metal plate. The metal substrate is such that the light source mounting surface-forming layer is a metal layer directly contacting the heat dissipating metal plate, and the light source mounting surface is a surface of an Au layer which is the outermost layer of the light source mounting surface-forming layer.

Metal substrate and light source device

A light control apparatus for a LED light-emitting device comprises a driving current supply unit supplying an AC current as a driving current via a pair of terminals to the LED light-emitting device including a set of LED elements having mutually different light emission wavelength regions connected in parallel while providing opposite polarities and the pair of terminals provided to supply the driving current to the set of LED elements; an individual amount defining unit defining a positive driving current amount and a negative driving current amount respectively to be supplied to the LED light-emitting device in a positive half cycle and a negative half cycle included in one cycle of the AC current respectively.

Light control apparatus for light emitting device and illumination system

This application discloses a semiconductor optical device apparatus having on a substrate, at least, a compound semiconductor layer containing an active layer, a protection film having a stripe-shaped opening formed on the compound semiconductor layer, and a ridge type compound semiconductor layer formed as to cover the stripe-shaped opening having a smaller refractive index than the refractive index of the active layer, has a feature that a width (W ) at an opening center of the stripe-shaped opening is different from either or both of a width (W ) of the opening front end and a width (W ) of the opening rear end. According to the invention, a semiconductor optical device apparatus capable of operating with a high output, and a semiconductor optical device apparatus having a small beam spot diameter, and the like can be manufactured where the width of the stripe-shaped opening is properly controlled.

Semiconductor optical device apparatus

In a semiconductor light-emitting device including a substrate, a first compound semiconductor layer including an active layer formed on the substrate, a second compound semiconductor layer of a ridge type formed on the first compound semiconductor layer, and a protective film formed above the first compound semiconductor layer on both sides of the second compound semiconductor layer, the disclosed semiconductor light-emitting device has a current blocking layer formed above the first compound semiconductor layer outside the protective film. This semiconductor light-emitting device is with a high production yield since readily cleaved and assembled, with adequately squeezed currents, and with, when assembled in the junction-down type, a high output and a longer life span.

Semiconductor light-emitting device

Semiconductor light-emitting device and manufacturing method for the same

The present invention provides a semiconductor light-emitting device including a first clad layer comprising a first conductive type of AlGaAsP compound, a second clad layer that is located next to the first clad layer, comprises a first conductive type of AlGaInP compound and has a thickness of up to 0.5 &mgr;m, an active layer that is located next to the second clad layer and comprises a first or second conductive type AlGaInP or GaInP, a third clad layer that is located next to the active layer, comprises a second conductive type of AlGaInP compound and has a thickness of up to 0.5 &mgr;m, and a fourth clad layer that is located next to the third clad layer and comprises a second conductive type of AlGaAsP compound, and/or a light-extracting layer that comprises a second conductive type AlGaP or GaP and has a thickness of 1 &mgr;m to 100 &mgr;m.

Semiconductor light-emitting devices

The present invention provides a semiconductor light-emitting device including a first clad layer comprising a first conductive type of AlGaAsP compound, a second clad layer that is located next to the first clad layer, comprises a first conductive type of AlGaInP compound and has a thickness of up to 0.5 .mu.m, an active layer that is located next to the second clad layer and comprises a first or second conductive type AlGaInP or GaInP, a third clad layer that is located next to the active layer, comprises a second conductive type of AlGaInP compound and has a thickness of up to 0.5 .mu.m, and a fourth clad layer that is located next to the third clad layer and comprises a second conductive type of AlGaAsP compound, and/or a light-extracting layer that comprises a second conductive type AlGaP or GaP and has a thickness of 1 .mu.m to 100 .mu.m.

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Ushiku, Japan

Yoshihito Sato