Denso Corporation

Yoshihito Mitsuoka

Eiichi Okuno

Takeshi Endo

Yoshiyuki Hisada

Hideo Matsuki

Jun Kojima

Kazunori Suzuki

Shinichi Mukainakano

Susumu Sobue

Shinji Amano

Ayahiko Ichimiya

A formation method for forming a water repellent layer on a surface of a metal substrate forms asperities on a surface of a metal basis material of the metal substrate by irradiating the metal basis material with plasma ions. The formation method forms an alloy from atoms of a metal of the metal basis material and the plasma ions. The formation method forms the asperities with portions of the metal basis material, which are not etched due to the alloy, and portions of the metal basis material, which are not alloyed but are etched. The formation method forms the water repellent layer by forming the asperities.

Formation method of water repellent layer and injector having water repellent layer

A silicon carbide semiconductor device includes: a semiconductor substrate having a principal surface and a backside surface; a drift layer disposed on the principal surface; a base region disposed on the drift layer; a source region disposed on the base region; a surface channel layer disposed on both of the drift layer and the base region for connecting between the source region and the drift layer; a gate insulation film disposed on the surface channel layer and including a high dielectric constant film; a gate electrode disposed on the gate insulation film; a source electrode disposed on the source region; and a backside electrode disposed on the backside surface.

Silicon carbide semiconductor device

Silicon carbide semiconductor device and method for manufacturing the same

The principal surface of a p-type SiC substrate () is formed of a face intersecting (0001) Si-face at 10 to 16&#xb0;. An nsource region () and an ndrain region () are formed in a surface layer portion at the principal surface of the p-type SiC substrate () so as to be separated from each other. A gate electrode () is formed on a gate oxide film () on the principal surface of the p-type SiC substrate ().

Silicon carbide semiconductor device having enhanced carrier mobility

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Toyota, Japan

Yoshihito Mitsuoka