Panasonic Corporation

Matsushita Electric Industrial Co., Ltd.

Panasonic Intellectual Property Management Co., Ltd.

Cambridge Enterprise Limited

Yoshihisa Yamashita

Seiichi Nakatani

Koichi Hirano

Takashi Kitae

Takashi Ichiryu

Seiji Karashima

Shingo Komatsu

Susumu Sawada

Satoru Tomekawa

Koji Kawakita

Toshiyuki Kojima

Mitsuhiro Matsuo

Hiroyuki Handa

Yasuhiro Sugaya

Toshiyuki Asahi

Tsunenori Yoshida

Toshio Fujii

Hiroki Yabe

Yasuyuki Matsuoka

Nobuyuki Matsui

Masanori Shimizu

Tatsumi Setomoto

Tetsushi Tamura

Masaki Suzumura

Hiroyuki Ishitomi

Tadashi Nakamura

Henning Sirringhaus

Tetsuyoshi Ogura

Takeshi Suzuki

Makoto Takahashi

Yoshihiro Kawakita

Satoshi Arimoto

Kazuma Mima

Taiji Kuroiwa

Kulbinder Kumar Banger

A method for manufacturing an electronic component package. The method includes (i) providing a package precursor in which an electronic component is embedded such that an electrode of the electronic component is exposed at a surface of a sealing resin layer; (ii) forming a first metal plating layer such that the first metal plating layer is in contact with the exposed surface of the electrode of the electronic component; (iii) disposing a metal foil in face-to-face spaced relationship with respect to the first metal plating layer; and (iv) forming a second metal plating layer. In step (iv), the second metal plating layer is formed so as to fill a clearance between the first metal plating layer and the metal foil, thereby integrating the metal foil, the first metal plating layer and the second metal plating layer with each other.

Electronic component package and method for manufacturing the same

There is provided a light-emitting device comprising a light-emitting element. The light-emitting device of the present invention comprises an electrode part for the light-emitting element; a reflective layer provided on the electrode part; and the light-emitting element provided on the reflective layer such that the light-emitting element is in contact with at least a part of the reflective layer, wherein the light-emitting element and the electrode part are in an electrical connection with each other by mutual surface contact via the at least a part of the reflective layer, wherein the electrode part serves as a supporting layer for supporting the light-emitting element, and wherein the electrode part extends toward the outside of the light-emitting element and beyond the light-emitting element.

Light-emitting device and method for manufacturing the same

A method for manufacturing an electronic component package comprises: (i) preparing a metal foil having opposed principal surface 'A' for placement of an electronic component and principal surface 'B', and a through-hole located in an electronic component-placement region of surface &#x201c;A&#x201d;; (ii) placing the electronic component on the metal foil such that the electronic component is positioned in the electronic component-placement region, and an opening of the through-hole is capped with an electrode of the electronic component; (iii) forming a sealing resin layer on surface &#x201c;A&#x201d; such that the electronic component is covered with the sealing resin layer; and (iv) forming a metal plating layer on surface &#x201c;B&#x201d;. A dry plating process and a wet plating process are performed to form the metal plating layer in step (iv) such that the through-hole is filled with the metal plating layer, and the metal foil and the metal plating layer are integrated.

Electronic component package and method for manufacturing same

An electrochemical detector is an electrochemical detector for detecting a substance in a liquid by generating a redox cycle, the electrochemical detector comprising: a first working electrode having a first electrode surface, a second working electrode having a second electrode surface, and a plurality of insulating spacer particles, wherein the first and second electrode surfaces are placed so as to face each other so that an electric field is formed between the first and second electrode surfaces, and the plurality of spacer particles are placed along the first and second electrode surfaces so as to separate the first and second electrode surfaces from each other.

Electrochemical detector and method for producing same

There is provided a method for manufacturing an electronic component package, wherein a first electronic component and a second electronic component are placed on a carrier, and a sealing resin layer is formed on the carrier, followed by the carrier being peeled away to be removed, and thereby providing a package precursor in which the first and second electronic components are embedded such that an electrode of at least one of the first and second electronic components is exposed at a surface of the sealing resin layer. Upon the placing of the first and second electronic components, the first and second electronic components are positioned such that their height levels differ from each other. After the removal of the carrier, a metal plating layer is formed such that the metal plating layer is in contact with the exposed surface of the electrode of the at least one of the first and second electronic components.

There is provided a semiconductor device. The semiconductor device of the present invention includes a semiconductor element and a metal buffer layer in an electrical connection to the semiconductor element. The metal buffer layer and the semiconductor element are in a connection with each other by mutual surface contact of the metal buffer layer and the semiconductor element. The metal buffer layer is an external connection terminal used for a mounting with respect to a secondary mount substrate, and the metal buffer layer serves as a buffer part having a stress-relaxation effect between the semiconductor element and the secondary mount substrate.

Semiconductor device and method for manufacturing the same

A method for manufacturing an electronic component packages is provided, wherein a package precursor is provided, in which an electronic component is embedded in a sealing resin layer such that an electrode of the electronic component is exposed at a surface of the sealing resin layer. A combination of a formation process of a plurality of metal plating layers and a patterning process of the plurality of metal plating layers is provided to form a step-like metal plating layer, the formation process being performed by sequential dry and wet plating processes with respect to the package precursor, and the patterning process being performed by a patterning of at least two of the plurality of metal plating layers.

There is provided a method for manufacturing an electronic component package. The method includes the steps: (i) disposing a metal pattern layer on an adhesive carrier; (ii) placing at least one kind of electronic component on the adhesive carrier, the placed electronic component being not overlapped with respect to the metal pattern layer; (iii) forming a sealing resin layer on the adhesive carrier, and thereby producing a precursor of the electronic component package; (iv) peeling off the adhesive carrier of the precursor, whereby the metal pattern layer and an electrode of the electronic component are exposed at the surface of the sealing resin layer; and (v) forming a metal plating layer such that the metal plating layer is in contact with the exposed surface of the metal pattern layer and the exposed surface of the electrode of the electronic component.

Electronic component package and method of manufacturing same

There is provided a transparent electrode comprising a supporting substrate, a first transparent electrically-conductive film provided on the supporting substrate, a transparent insulating film provided on the first transparent electrically-conductive film, and a second transparent electrically-conductive film provided on the transparent insulating film. In the transparent electrode of the present invention, all of the first transparent electrically-conductive film, the second transparent electrically-conductive film and the transparent insulating film provided therebetween comprise a metal compound, and the first transparent electrically-conductive film and the second transparent electrically-conductive film have a crystalline structure, whereas the transparent insulating film has an amorphous structure.

Transparent electrode and method for manufacturing the same

A ceramic substrate composite includes a conductor pattern composite and an insulating layer on a ceramic substrate. The ceramic substrate composite is formed such that the conductor pattern composite and the insulating layer are provided on the ceramic substrate with each other so that the insulating layer overlaps a part of the conductor pattern composite. The conductor pattern composite is composed of a conductor portion and an insulating portion that exists locally in the conductor portion, and the insulating portion is an insulating material that constitutes the insulating layer.

Ceramic substrate composite and method for manufacturing ceramic substrate composite

A method for manufacturing a build-up substrate, the build-up substrate comprising an insulating layer and a wiring pattern layer stacked over a circuit substrate, said method comprising the steps of: (i) applying a photoactive metal oxide precursor material to one or both sides of the circuit substrate with a wiring pattern, and drying the applied photoactive metal oxide precursor material to form an insulating film; (ii) forming an opening for a via hole in the insulating film by exposure and development of the insulating film; (iii) applying a heat treatment to the insulating film to convert the insulating film into a metal oxide film, thereby forming a build-up insulating layer of the metal oxide film; and (iv) plating the build-up insulating layer to form via holes in the openings, forming a metal layer on the build-up insulating layer, and etching the metal layer to form a build-up wiring pattern; and (v) repeating the steps from (i) to (iv) at least one time.

Built-up substrate, method for manufacturing same, and semiconductor integrated circuit package

One aspect in the present disclosure relates to a method for manufacturing an amorphous metal oxide semiconductor. In an exemplary embodiment, a film is deposited on a substrate from a mixed solution as a starting element. For example, the mixed solution includes at least an indium alkoxide and a zinc alkoxide in a solvent. The film made from the mixed solution on the substrate is cured by thermal-annealing in a water vapor atmosphere, at a temperature range of, for example, 210 to 275 degrees Celsius, inclusive.

Method for manufacturing a metal oxide semiconductor

There is provided a flip-chip mounting resin composition which can be used for a flip-chip mounting process that is high in productivity and reliability and thus can be applicable to a flip-chip mounting of a next-generation LSI. This flip-chip mounting resin composition comprises a resin, metal particles and a convection additivethat boils upon heating the resin. Upon the heating of the resin, the metal particles melt and the boiling convection additiveconvects within the resin. This flip-chip mounting resin composition is supplied between a circuit substrateand a semiconductor chip, and subsequently the resinis heated so that the molten metal particles self-assemble into the region between each electrode of the circuit substrate and each electrode of the semiconductor chip. As a result, an electrical connection is formed between each electrode of the circuit substrate and each electrode of the semiconductor chip. Finally, the resinis allowed to cure so that the semiconductor chipis secured to the circuit substrate, which leads to in a formation of a flip chip assembly.

Flip-chip mounting resin composition and bump forming resin composition

A method for fabricating a flexible semiconductor device includes: preparing a layered filmincluding a first metal layer, an inorganic insulating layer, a semiconductor layer, and a second metal layerwhich are sequentially formed; etching the first metal layerto form a gate electrode; compression bonding a resin layerto a surface of the layered filmprovided with the gate electrodeto allow the gate electrodeto be embedded in the resin layer; and etching the second metal layerto form a source electrodeand a drain electrode, wherein the inorganic insulating layeron the gate electrodefunctions as a gate insulating film, and the semiconductor layerbetween the source electrodeand drain electrodeon the inorganic insulating layerfunctions as a channel

Method for making a semiconductor device on a flexible substrate

A semiconductor device having a semiconductor elements formed with higher density is provided. Furthermore an image display device using the semiconductor device is also provided. A semiconductor device comprising a resin film that has a through hole that penetrates from one surface to the other surface thereof, an organic semiconductor disposed inside the through hole, an insulating film on one end of the organic semiconductor, a gate electrode on the insulating film, a source electrode connected electrically to the other end of the organic semiconductor and a drain electrode connected electrically to the other end of the organic semiconductor.

Growing community of inventors

Kyoto, Japan

Yoshihisa Yamashita