Mitsubishi Electric Corporation

International Meteorological Consultant Inc.

Yoshihisa Uchida

Koji Tanaka

Junji Fujino

Shohei Ogawa

Yuji Sato

Yo Tanaka

Soichi Sakamoto

Tatsunori Yanagimoto

Shotaro Nakamura

Yoshiaki Takewaki

According to the present disclosure, a semiconductor device includes a semiconductor substrate, a first metal layer provided above the semiconductor substrate, a second metal layer provided above the first metal layer and containing Ni as a material and a third metal layer provided above the second metal layer and containing Cu or Ni as a material, wherein the second metal layer has a Vickers hardness of 400 Hv or more and is harder than the third metal layer, and the third metal layer is harder than the first metal layer.

Semiconductor device and method for manufacturing semiconductor device

A hinge for connecting a first pivoting body to a second pivoting body in a relatively pivotable manner includes a sheet body configured to attach a first end of the sheet body to the first pivoting body, and to attach a second end of the sheet body to the second pivoting body. The sheet body includes a plurality of layered sheet members, and a pivot shaft between layered sheet members of the plurality of layered sheet members to allow the first end and the second end of the sheet body to pivot relative to each other. The pivot shaft includes a soft resin part between the layered sheet members.

Hinge and hinge roll

The object is to provide a technology capable of increasing the reliability of a power semiconductor device. A power semiconductor device includes: a substrate including an insulating layer and a circuit pattern that are disposed in this order; a power semiconductor element electrically connected to the circuit pattern; and an electrode terminal having a thinned portion including a welded portion welded to the circuit pattern by a fiber laser. A thickness of the circuit pattern is not less than 0.2 and not more than 0.5 mm, and a thickness of the thinned portion of the electrode terminal is not less than one time and not more than two times the thickness of the circuit pattern.

Power semiconductor device and manufacturing method thereof, and power conversion device

A power module is fabricated, employing a clad metal that is formed by pressure-laminating aluminum and copper, in such a manner that the aluminum layer of the clad metal is bonded such as by ultrasonic bonding to the surface electrode of the power semiconductor chip and a wire is bonded to the copper layer thereof to establish electrical circuit. The clad metal is thermally treated in advance at a temperature higher than the operating temperature of the power semiconductor chip to sufficiently form intermetallic compounds at the interface between the aluminum layer and the copper layer for the intermetallic compounds so as not to grow in thickness after the bonding processes.

Power module

Growing community of inventors

Tokyo, Japan

Yoshihisa Uchida