Mitsubishi Denki Kabushiki Kaisha

Mitsubishi Electric Corporation

Yoshihisa Tashiro

Tetsuya Yagi

Akihiro Shima

Zempei Kawazu

Harumi Nishiguchi

Tsutomu Yamaguchi

Takehiro Nishida

Kenzo Mori

Hiroo Sakamoto

A semiconductor laser chip is joined to an AlN sub-mount in a junction-down manner. The sub-mount is joined to a package. The AlN sub-mount is joined to a stem. The direction perpendicular to the irradiation direction of a laser beam emitted from the semiconductor laser chip is the direction of the width of the sub-mount. The thickness and the width of the AlN sub-mount are determined so that the product of the equivalent stress applied to the center of the surface of the semiconductor laser chip joined to the sub-mount and the stress in the direction of the width of the sub-mount does not exceed 70% of the maximum value of the product obtained by changing the thickness and the width of the AlN sub-mount.

Semiconductor light emitting device and method for manufacturing the same

In fabricating a semiconductor laser producing light with a wavelength of 770 to 810 nm, impurities are introduced into an MQW active layer near a light emitting facet of the laser to form a disordered region constituting a window layer. Pump light is applied to the window layer to generate photoluminescence whose wavelength &#x3bb; dpl (nm) is measured. A blue shift amount &#x3bb; bl (nm) is defined as the difference between the wavelength &#x3bb; apl (nm) 0f photoluminescence generated by application of pump light to the active layer on the one hand, and the wavelength &#x3bb; dpl (nm) of photoluminescence from the window layer under pump light irradiation on the other hand. The blue shift amount &#x3bb; bl is referenced during the fabrication process in order to predict catastrophic optical damage levels of semiconductor lasers.

Method of fabricating semiconductor laser

Growing community of inventors

Tokyo, Japan

Yoshihisa Tashiro