Rohm Co., Ltd.

Yoshihisa Takada

Satoshi Kageyama

Hideaki Yanagida

Hirofumi Takeda

Yuichi Nakao

A terminal includes a first conductive layer; a wiring layer on the first conductive layer; a second conductive layer on the wiring layer; and a conductive bonding layer that is in contact with a bottom surface and a side surface of the first conductive layer, a side surface of the wiring layer, a portion of a side surface of the second conductive layer, and a portion of a bottom surface of the second conductive layer, wherein an end portion of the second conductive layer protrudes from an end portion of the first conductive layer and an end portion of the wiring layer, and wherein the conductive bonding layer is in contact with a bottom surface of the end portion of the second conductive layer.

Semiconductor device with improved internal and external electrode structure

There is provided a semiconductor device that includes a wiring layer having a main surface and a rear surface which face opposite sides in a thickness direction, a first insulating layer covering an entirety of the rear surface, a second insulating layer which is in contact with the main surface, a semiconductor element which faces the second insulating layer and is mounted on the wiring layer, and a sealing resin which is in contact with the second insulating layer and covers the semiconductor element, wherein surface roughness of the main surface is larger than surface roughness of the rear surface.

Semiconductor device

There is provided a terminal that includes a first conductive layer; a wiring layer on the first conductive layer; a second conductive layer on the wiring layer; and a conductive bonding layer which is in contact with a bottom surface and a side surface of the first conductive layer, a side surface of the wiring layer, a portion of a side surface of the second conductive layer, and a portion of a bottom surface of the second conductive layer, wherein an end portion of the second conductive layer protrudes from an end portion of the first conductive layer and an end portion of the wiring layer, and wherein the conductive bonding layer is in contact with a bottom surface of the end portion of the second conductive layer.

Terminal configuration and semiconductor device

A semiconductor device is provided. The semiconductor device can be manufactured with a reduced cost. The semiconductor device (D) includes, a substrate (D), which includes a main surface (D) and a recess (D) depressed from the main surface (D), and includes a semiconductor material; a wiring layer (D) in which at least a portion thereof is formed on the substrate (D); one or more first elements (D) accommodated in the recess (D); a sealing resin (D) covering at least a portion of the one or more first elements (D) and filled in the recess (D); and a plurality of columnar conductive portions (D) penetrating through the sealing resin (D) in the depth direction of the recess (D), and respectively connected with the portion of the wiring layer (D) that is formed at the recess (D).

The method of manufacturing a semiconductor device according to the present invention includes: a groove forming step of forming a groove in an insulating layer made of an insulating material containing Si and O; an alloy film applying step of covering the side surface and the bottom surface of the groove with an alloy film made of an alloy material containing Cu and Mn by sputtering; a thinning step of reducing the thickness of a portion of the alloy film covering the bottom surface of the groove; a wire forming step of forming a Cu wire made of a metallic material mainly composed of Cu in the groove after the thinning step; and a barrier film forming step of forming a barrier film made of MnSiO between the Cu wire and the insulating layer by heat treatment.

Growing community of inventors

Kyoto, Japan

Yoshihisa Takada