Seikosha Co., Ltd.

Nippon Precision Circuits Inc.

Yoshihisa Ogiwara

Yoshiaki Watanabe

Sakae Tanaka

Katsuo Shirai

Noboru Motai

Yasunari Kanda

Kazunori Saito

Yaeko Suzuki

Keiko Shibuki

A silicon thin film transistor array includes a plurality of silicon thin film transistors in an array-like form, each silicon thin film transistor including an insulating substrate, a gate electrode formed on the insulating substrate, a gate insulating layer formed on the insulating substrate containing the gate electrode, a pair of first impurity contained silicon layers formed on the gate insulating layer in such a manner as to transversely cross a terminal part of the gate electrode, an intrinsic silicon layer formed on the pair of first impurity contained silicon layers and on the gate insulating layer between the pair of first impurity contained silicon layers in such a manner as to connect the pair of first impurity contained silicon layers, a protective insulation layer formed on the intrinsic silicon layer, and a source electrode and a drain electrode formed at contact parts of the pair of first impurity contained silicon layers; gate wiring for connecting the gate electrodes of the silicon thin film transistors to each other; and source wiring for connecting the source electrodes of the silicon thin film transistors to each other.

Silicon thin film transistor

A silicon thin film transistor array includes a plurality of silicon thin film transistors in an array-like form, each silicon thin film transistor including an insulating substrate, a gate electrode formed on the insulating substrate, a gate insulating layer formed on the insulating substrate containing the gate electrode, a pair of first impurity contained silicon layers formed on the gate insulating layer in such a manner as to transversely cross a terminal part of the gate electrode, an intrinsic silicon layer formed on the pair of first impurity contained silicon layers and on the gate insulating layer between the pair of first impurity contained silicon layers in such a manner as to connect the pair of first impurity contained silicon layers, a protective insulating layer formed on the intrinsic silicon layer, and a source electrode and a drain electrode formed at contact parts of the pair of first impurity contained silicon layers; gate wiring for connecting the gate electrodes of the silicon thin film transistors to each other; and source wiring for connecting the source electrodes of the silicon thin film transistors to each other.

A silicon thin film transistor array includes a plurality of silicon thin film transistors in an array-like form, each silicon thin film transistor including an insulating substrate, a gate electrode formed on the insulating substrate, a gate insulating layer formed on the insulating substrate containing the gate electrode, a pair of first impurity contained silicon layers formed on the gate insulating layer in such a manner as to transversely cross a terminal part of the gate electrode, an intrinsic silicon layer formed on the pair of first impurity contained silicon layers and on the gate insulating layer between the pair of first impurity contained silicon layers in such a manner as to connect the pair of first impurity contained silicon layers, a protective insulation layer formed on the intrinsic silicon layer, and a source electrode and a drain electrode formed at contact parts of the pair of first impurity contained silicon layers; gate wiring for connecting the gate electrodes of the silicon thin film transistors to each other; and source writing for connecting the source electrodes of the silicon thin film transistors to each other.

A method for producing a reverse staggered type silicon thin film transistor includes the steps of forming a gate insulating layer on a substrate having a gate electrode, the gate insulating layer having a transistor-forming portion; forming an intrinsic silicon film on the transistor-forming portion of the gate insulating layer; forming an n-type silicon layer on the intrinsic silicon layer; forming a source electrode on the n-type silicon layer; forming a drain electrode on the n-type silicon layer; forming a resist layer on the source electrode and drain electrode and having the same shape thereof; subsequently removing a portion of the n-type silicon layer by using the resist layer as a mask, such that there remains a predetermined thickness of the n-type silicon layer; and doping the predetermined thickness of the n-type silicon layer with p-type impurities by using the resist layer as a mask.

Method for producing reverse staggered type silicon thin film transistor

Silicon thin film transistor with an intrinsic silicon active layer

Silicon thin film transistor and method for producing the same

Method for producing a silicon thin film transistor

A reverse staggered type silicon thin film transistor includes a substrate having a gate electrode; a gate insulating layer on the substrate and the gate electrode, the gate insulating layer having a transistor-forming portion; a lower layer silicon film on the transistor-forming portion of the gate insulating layer and in contact therewith, the lower layer silicon film being formed at a first temperature and with a first thickness; an upper layer silicon film formed on the transistor-forming portion of the gate insulating layer at a second temperature which is lower than the first temperature and with a second thickness greater than the first thickness; an n-type silicon layer on the upper layer silicon film and in contact therewith; a source electrode on the n-type silicon layer; and a drain electrode on the n-type silicon layer.

Method of fabricating a reverse staggered type silicon thin film

An amorphous silicon thin film transistor includes a gate electrode, an amorphous silicon layer on the gate insulating layer, a drain electrode and a source electrode on the amorphous silicon layer such that a portion of the side of the amorphous silicon layer which faces away from the gate electrode is exposed, and an impurity layer for reducing an off current of the transistor, the impurity layer including an impurity forming an acceptor and which is formed on the exposed portion of the amorphous silicon layer, the amorphous silicon layer being of a first conduction type and the acceptor being of a second different conduction type.

Amorphous silicon thin film transistor

A reverse staggered type silicon thin film transistor includes a substrate having a gate electrode; a gate insulating layer on the substrate and the gate electrode, the gate insulating layer having a transistor-forming portion; a lower layer silicon film on the transistor-forming portion of the gate insulating layer and in contact therewith, the lower layer silicon film being formed at a first temperature and with a first thickness; an upper layer silicon film formed on the transistor-forming portion of the gate insulating layer at a second temperature which is lower than the first temperature and with a second thickness greater than the first thickness; and n-type silicon layer on the upper layer silicon film and in contact therewith; a source electrode on the n-type silicon layer; and a drain electrode on the n-type silicon layer.

Reverse staggered type silicon thin film transistor

A method for manufacturing a amorphous silicon thin film transistor comprises exposing an morphous silicon layer situated between a source electrode and a drain electrode to a gas phase atmosphere having a gas containing an impurity forming an acceptor, then activating said impurity with an electric field or light energy and doping the activated impurity into said amorphous silicon layer. The gas may be a hydrogen compound and it may include an oxidizing gas.

Amorphous silicon thin film transistor and method of manufacturing the

A light shielding thin film is provided on a light transmitting substrate, and the film is covered by a photoresist. The photoresist is exposed and developed to form a pattern, and the film is etched using the pattern as a mask. The pattern is then exposed through the substrate, using the film as a mask, the pattern then being developed to form a pattern of reduced size. The film is then etched using the reduced size pattern as a mask.

Growing community of inventors

Tochigi, Japan

Yoshihisa Ogiwara