Panasonic Intellectual Property Management Co., Ltd.

Matsushita Electric Industrial Co., Ltd.

Panasonic Corporation

Yoshihisa Minami

Takuya Ishii

Takeshi Azuma

Takeshi Takagi

Manabu Yanagihara

Akira Asai

Teruhito Ohnishi

Kazuhiro Yahata

Hiroki Akashi

Daijiro Arisawa

Taizo Fujii

Daisuke Yamamoto

Mitsuo Sugiura

Koichiro Tanaka

Yoshiyuki Matsunaga

Koji Takahashi

Noriaki Saito

Kazuhito Kimura

Mitsuru Tanabe

Takashi Saji

Mikio Motomori

Shinya Miyazaki

Kunihiko Hara

Takuo Hino

Satoshi Wada

Keita Kawabe

Takaharu Saeki

Tatsuya Sakurai

Hiroyuki Hayashita

Yoshihito Kawakami

Yoichi Deguchi

Masaru Yasuda

A switch circuit is configured of a first semiconductor element and a second semiconductor element connected in series, and receives a DC voltage of 100 V or more. The drive circuit causes the first semiconductor element or the second semiconductor element to perform a switching operation. The isolated power supply circuit converts a predetermined power supply voltage into an isolated first power supply voltage, and outputs the first power supply voltage to the drive circuit. The isolation signal converter converts a first signal of 6 MHz or more into an isolated first drive signal, and outputs the first drive signal to the drive circuit. The single substrate mounts the isolated power supply circuit and the isolation signal converter. Both the first semiconductor element and the second semiconductor element are wide bandgap semiconductor elements.

Class-D power converter

The semiconductor module includes: a heat dissipation board including first to third wiring patterns; a first metal plate on the first wiring pattern, a second metal plate on the second wiring pattern, a first semiconductor chip and a first intermediate board which are on the first metal plate, a second semiconductor chip and a second intermediate board which are on the second metal plate. A first metal film on the first intermediate board is electrically connected to the first semiconductor chip and the second metal plate, and a second metal film on the second intermediate board is electrically connected to the second semiconductor chip and the third wiring pattern.

Semiconductor module, power semiconductor module, and power electronic equipment using the semiconductor module or the power semiconductor module

A switching circuit includes: a normally-off junction field-effect GaN transistor including source, drain, and gate terminals; a drive device of one output type electrically connected to the gate terminal; a first rectifier, between the source terminal and the gate terminal, including an anode on a source terminal side and a cathode on a gate terminal side; a capacitor between a cathode side of the first rectifier and the drive device; a first resistor between the capacitor and the drive device; a second resistor, one side of the second resistor being connected to the drive device, another side of the second resistor being connected between the cathode side of the first rectifier and the capacitor; and a second rectifier including an anode on a capacitor side and a cathode on a drive device side. No resistor is provided between the cathode side of the second rectifier and the drive device.

Switching circuit

An advantageous effect of a low-pass filter that reduces high-frequency noise can be obtained by including an input terminal that extends from a front surface to a rear surface of a multilayer circuit board including a double-sided circuit board; a first wiring conductor having an end connected to the input terminal on the rear surface of the multilayer circuit board; a first via that extends from an other end of the first wiring conductor to the front surface of the multilayer circuit board; a second wiring conductor having an end connected to the first via on the front surface of the multilayer circuit board; and a first input capacitor disposed on the second wiring conductor; by being conductive due to the input terminal and the first via being configured in series; and including the first input capacitor.

Multilayer circuit board filter

A switching circuit includes; a switching element; a driver; a diode connected between a source terminal and a gate terminal of the switching element; a resistor connected between the driver and the gate terminal of the switching element; a series circuit connected in parallel with the resistor, and including a capacitor and a resistor; and a diode including an anode on a side of the gate terminal of the switching element and a cathode on a side of a second output terminal of the driver. The diode is connected in parallel with at least the capacitor out of the capacitor and the resistor connected in series.

A switching power supply device of the present disclosure includes a device connection state detection circuit that detects a connection state in a load device connection terminal, in a power supply system having the load device connection terminal. The device connection state detection circuit includes a transformer, a switching element, a pulse generator, and a waveform detection circuit. The waveform detection circuit detects a voltage or a current generated at a connecting point between a primary winding wire of the transformer and the switching element in response to operation of a pulse signal. The waveform detection circuit compares the voltage or the current with a predetermined reference value, and outputs an output signal in response to a comparison result to an OFF terminal.

Switching power supply device

The present invention provides a solid-state imaging device which is capable of high-speed and high-quality pixel mixture. The solid-state imaging device includes: a plurality of pixels; a row selecting circuit; a plurality of column signal lines each of which is provided to a corresponding one of columns of pixels, is connected to pixels of the corresponding column, and transfers the signals outputted from the connected pixels; a pixel current source which (i) is provided to a corresponding one of the column signal lines, (ii) is connected to the corresponding column signal line, and (iii) supplies to the connected column signal line a current when the signal is outputted from the selected pixel to the connected column signal line; and a control unit which changes the number of rows of pixels being simultaneously selected by the row selecting circuit, and values of the current supplied by the pixel current source.

Solid-state imaging device

A power supply device includes an inductor controlled by switching to be charged or discharged such that a DC input voltage is boosted and a capacitor which smoothes the boosted voltage to generate a DC output voltage. Specifically, the power supply device further includes a transistor connected between the inductor and the capacitor to carry out a rectification function; an output voltage determination circuit which refers to the DC input voltage and the DC output voltage to determine the level of these voltages; and a current control circuit which controls a current flowing through the transistor such that the current has a predetermined value when the output voltage determination circuit determines that the DC output voltage is lower than the DC input voltage.

Power supply device

The present invention provides a transmitter conforming to the EER method in a wide frequency band at high efficiency. For this purpose, the amplitude component of a modulated signal is input to the power supply terminal of a high-frequency power amplifier, the I and Q quadrature signals thereof are input to the high-frequency input terminal of the high-frequency power amplifier, and the original modulated signal is obtained from the output of the high-frequency power amplifier. A collector voltage is supplied from DC&#x2014;DC converter grouphaving output voltages being different sequentially to an emitter followervia a switch group. One of the outputs of the DC&#x2014;DC converterstois selected depending on the level of the amplitude component as the collector voltage and supplied to the emitter follower, whereby the difference between the emitter voltage of he emitter followerand the collector voltage of the emitter followeris made smaller and the efficiency of the emitter followeris raised; furthermore, the power supply voltage of the high-frequency power amplifieris voltage-converted by the emitter follower, whereby operation in a wide frequency band is made possible.

Transmitter

A MIM (metal-insulator-metal) capacitor is provided with a substrate; a first metal area; a second metal area formed between the substrate and the first metal area; and a first insulating layer formed between the first metal area and the second metal area; wherein a capacitance value is determined by opposing surface areas of the first metal area and the second metal area; and the MIM capacitor is further provided with: a third metal area formed between the second metal area and the substrate; and a second insulating layer formed between the third metal area and the second metal area; wherein the third metal area is connected to a ground potential.

MIM capacitor

A variable capacitor includes an N layer including a variable capacitance region, a P layer epitaxially grown on the N layer and formed from a SiGe film and a Si film, and a P-type electrode. An NPN-HBT (Hetero-junction Bipolar Transistor) includes a collector diffusion layer formed simultaneously with the N layer of the variable capacitor, a collector layer, and a Si/SiGe layer epitaxially grown simultaneously with the P layer of the variable capacitor. Since a depletion layer formed in a PN junction of the variable capacitor can extend entirely across the N layer, reduction in variation range of the capacitance can be suppressed.

Method of manufacturing a semiconductor device comprising a bipolar transistor and a variable capacitor

Semiconductor device

An active filter circuit (a band stop filter type or a band pass filter type) having high Q value and high efficiency and which is suitable for integration has an input signal vi inputted from the input terminal supplied to the non-inverting input terminal of the first differential amplifier. The output terminal of the first differential amplifier is connected to the non-inverting input terminal of the second differential amplifier, and the first capacitor 3 is connected between this connection line and the alternate current ground. An output of the second differential amplifier is connected to the non-inverting input terminal of the first differential amplifier via the second capacitor, the inverting input terminal of the first differential amplifier, the inverting input terminal of the second differential amplifier 4, the non-inverting input terminal of the third differential amplifier, the output terminal of the third differential amplifier and the output terminal of the active filter circuit. An inverting input terminal of the third differential amplifier is connected to alternate current ground. The output of the second differential amplifier becomes the output signal vo of the active filter circuit.

Growing community of inventors

Shiga, Japan

Yoshihisa Minami