Kabushiki Kaisha Toshiba

Toshiba Memory Corporation

Canon Kabushiki Kaisha

Yoshihisa Kawamura

Ikuo Yoneda

Eishi Shiobara

Takahito Nishimura

Shinichi Ito

Kentaro Matsunaga

Kazuhiro Takahata

Yoshiharu Ono

Tetsuo Takahashi

Takayuki Ito

Yoshiyuki Nakagawa

Hideki Ina

Tetsuro Nakasugi

Yojiro Matsuda

Hirokazu Kato

Manabu Takakuwa

Ryo Yoshida

Masayuki Hatano

Yukinobu Suzuki

Hiroyuki Kashiwagi

Koji Hara

Hisako Aoyama

Kiminori Yoshino

Tomoya Oori

Yukiko Kikuchi

Hironobu Tamura

Suigen Kanda

Yohko Komatsu

Daizo Mutoh

Yukiko Sato

A light-emitting element includes a first electrode, a second electrode, and a light-emitting layer between the first electrode and the second electrode. The light-emitting element includes a transmittance-increasing layer with increasing transmittance in an optical path of light emitted from the light-emitting layer.

Organic light-emitting element, and display apparatus, imaging apparatus, lighting apparatus, electronic equipment, and image-forming apparatus including the same

A curved surface constituting a convex surface or a concave surface of each of a plurality of lenses includes at least a silicon nitride layer and another silicon nitride layer. An interlayer having a composition different from a composition of the silicon nitride layer and a composition of the other silicon nitride layer is arranged between the silicon nitride layer and the other silicon nitride layer, and a thickness of the interlayer is less than a thickness of the silicon nitride layer and a thickness of the other silicon nitride layer.

Optical apparatus and equipment

An imprinting system according to an embodiment includes a first measuring device measuring an intensity of light reflected from an end of a shot area of a monitor substrate being an area on which imprinting has been performed, a dripping condition generating device generating a dripping condition of a resin-based mask material on the basis of the measured intensity of light, and an imprinting apparatus performing imprinting using the dripping condition. The imprinting apparatus includes a second measuring device measuring an intensity of light reflected from an end of a first shot area of a production substrate being an area on which imprinting has been performed, and a control unit adjusting arrangement of droplets of a resin-based mask material ejected on a second shot area of the production substrate being an area on which imprinting is to be performed on the basis of an intensity of light reflected from an end of the first shot area.

Imprinting system, method of manufacturing semiconductor device, and recording medium

According to one embodiment, an imprint apparatus including multiple types of imprint units and a conveyor to convey a substrate is provided. Each of the imprint units includes a suction mechanism configured to hold the substrate with multiple suction portions on a substrate holder, and a template having an imprint surface on which a concavo-convex pattern is formed on one face of a template substrate and having a recessed region in the other face, the recessed region corresponding to the imprint surface. The imprint units have different depths of the recessed regions in the templates and different arrangements of the suction portions in the suction mechanisms depending on the types.

Imprint apparatus and imprint method

According to one embodiment, a device substrate includes a multilayer film that includes a film constituting a device element and is disposed on a substrate. A main face on which the device element is disposed includes a patterning region on which a resist is to be applied during an imprint process, and a bevel region provided as a region from a peripheral edge portion of the patterning region to an end portion of the device substrate. The bevel region includes a region where an upper surface of the bevel region becomes lower toward the end portion of the device substrate relative to an upper surface of the patterning region. The upper surface of the bevel region has an inclination angle of 10&#xb0; or more and 90&#xb0; or less with respect to the upper surface of the patterning region, at a boundary between the patterning region and the bevel region.

Device substrate, method of manufacturing device substrate, and method of manufacturing semiconductor device

According to one embodiment, a template includes a template pattern and a liquid repellent pattern. The template pattern is formed on a substrate. The liquid repellent pattern has liquid repellency to a resist and are disposed on a periphery of a region for arrangement of the template pattern.

Template and pattern formation method

According to one embodiment, a pattern forming method is disclosed. The method can include selectively providing a curing agent to a pattern in a template, contacting the template provided the curing agent to a substrate, irradiating the curing agent with light where the template and the substrate are contacted each other to harden the curing agent, demolding the template from the substrate to form a curing agent pattern on the substrate, and etching the substrate on a basis of the curing agent pattern.

Pattern forming method

According to one embodiment, a pattern formation method is disclosed. The method includes forming a plurality of regions on a foundation and the plurality of the regions correspond to different pattern sizes. The method includes separating each of a plurality of block copolymers from another one of the plurality of the block copolymers and segregating the each of the plurality of the block copolymers into a corresponding one of the regions. The method includes performing a phase separation of the each of the block copolymers of each of the regions. The method includes selectively removing a designated phase of each of the phase-separated block copolymers to form a pattern of the each of the block copolymers and the pattern has a different pattern size for the each of the regions.

Pattern formation method and method for manufacturing semiconductor device

According to one embodiment, a method for pattern formation comprises forming a first pattern on a first region of a processed film, forming a reverse material film, having a photosensitive compound, on the processed film so that the reverse material film covers the first pattern, exposing and developing the reverse material film and processing the reverse material film into a second pattern in a second region different from the first region on the processed film, applying etch-back, after exposing and developing the reverse material film, to the reverse material film to expose an upper surface of the first pattern and processing the reverse material film into a third pattern in the first region, and etching the processed film using the second pattern and the third pattern as masks.

Method for pattern formation

An imprint method includes applying a light curable resin on a substrate to be processed, the substrate including first and second regions on which the light curable resin is applied, contacting an imprint mold with the light curable resin, curing the light curable resin by irradiating the light curable resin with light passing through the imprint mold, generating gas by performing a predetermined process to the light curable resin applied on a region of the substrate, the region including at least the first region, wherein an amount of gas generated from the light curable resin applied on the first region is larger than an amount of gas generated from the light curable resin of the second region, and forming a pattern by separating the imprint mold from the light curable resin after the gas being generated.

Imprint method

A method for filtering a chemical in which a first chemical stored in a first tank is filtered by a filter and a second chemical obtained by the filtering is stored in a second tank has: adding the capture amounts corresponding to the individual first chemicals first to n-th stored in the first tank, and getting an added capture amount; and comparing the added capture amount and a predetermined limit capture amount of the filter, and exchanging the filter based on the comparison result.

Method for filtering chemical

Growing community of inventors

Yokohama, Japan

Yoshihisa Kawamura