Tohoku University

Yoshihisa Horikawa

Tetsuo Endoh

Hideo Ohno

Shoji Ikeda

Shunsuke Fukami

Hideo Sato

Hiroaki Honjo

Fumihiro Matsukura

A magnetic tunnel junction element () includes a configuration in which a reference layer () that includes a ferromagnetic material, a barrier layer () that includes O, a recording layer () that includes a ferromagnetic material including Co or Fe, a first protective layer () that includes O, and a second protective layer () that includes at least one of Pt, Ru, Co, Fe, CoB, FeB, or CoFeB are layered.

Magnetic tunnel junction element and magnetic memory

Growing community of inventors

Sendai, Japan

Yoshihisa Horikawa