Sharp Kabushiki Kaisha Corporation

Yoshihisa Amano

Masahiro Murakami

Masahiko Kushino

Atsushi Yamada

Akiteru Deguchi

Takae Sakai

Shinichi Tokuno

Eiji Suematsu

Hiroya Sato

Mitsuyoshi Yamashita

Tamotsu Aoki

Yoshinori Seki

Yoshinori Motouchi

In order to securely ground an exterior shield and reduce burden imposed on a dicing blade and the exterior shield, a method of producing a semiconductor module comprises a hole-forming step of forming a holeextending from a top surface of a sealing resin layerto a ground wiring() provided at a collective substrate, a film-forming step of forming an electrically conductive film made of an electrically conductive material so as to cover at least the top surface of the sealing resin layer, an internal surface of the hole, and the ground wiring(), and a separation step of separating from each other a plurality of individual module sections which the individual module section comprises.

Method of producing semiconductor module and semiconductor module

A top panel, which is disposed to face a module board with an electronic component therebetween, includes a resin layer and a metal layer, and has an insulating characteristic. The metal layer includes a metal layer formed at a front side of the resin layer and a metal layer formed at a rear side of the resin layer. With this structure, in reflow soldering performed in mounting a semiconductor module on a main board, warp which is caused, under temperature change, in the top panel due to difference in coefficient of thermal expansion between the resin layer and the metal layer formed at the front side of the resin layer is cancelled by warp which is caused, under temperature change, in the top panel due to difference in coefficient of thermal expansion between the resin layer and the metal layer formed at the rear side of the resin layer, whereby warp of the top panel is eliminated. This helps prevent the electronic component adhered to the top panel with adhesive from being pressed down to or pulled up from the module board due to warp of the top panel.

Semiconductor module

Provided is an electronic component module which has high reliability and is capable of suppressing reduction in handling performance of a mounting machine. An electronic component module includes a plurality of electronic components mounted on a top surface of a module substrate, a planar top plate covering the electronic components, and a top plate holding member for holding the top plate. The plurality of electronic components include a quartz resonator, and a RF-IC which has a height smaller than that of the quartz resonator and is disposed on the top surface of the module substrate so as to be side by side with the quartz resonator. In addition, the top plate is fixed to the quartz resonator, and the top plate holding member for holding the top plate is disposed between the RF-IC and the top plate.

Electronic component module

A bias circuit includes: a first transistor having a base terminal grounded via a resistor, and a collector terminal connected to a first power supply port via an adjustment resistor; a second transistor having an emitter terminal connected to the base terminal of the first transistor, and a base terminal connected to the collector terminal of the first transistor; a third transistor having a base terminal connected to the base terminal of the first transistor, and a collector terminal connected to the first power supply port via an adjustment resistor; and a fourth transistor having a base terminal connected to the collector terminal of the third transistor, a current being taken out from the emitter terminal of the fourth transistor. This arrangement makes it possible to suppress a consuming current and output a bias current that is more stable against a temperature change and/or a power supply voltage change.

Bias circuit and power amplifier

A power amplifier includes a front-stage amplifier including first and second transistors connected in parallel, and a rear-stage amplifier including a third transistor. The first transistor is biased into near-Class A without a distortion compensation circuit. The second and third transistors are biased into near-Class B with a distortion compensation circuit. The gain characteristics of the first to third transistors are adjusted so that the concave portion of the gain characteristics of the front-stage amplifier and the convex portion of the gain characteristics of the rear-stage amplifier match each other, to thereby flatten the gain characteristic of the entire power amplifier.

Power amplifier

In the radio communication device of the present invention, a first carrier transmission modulation wave outputted from a first signal generatoris amplified by a first power amplifierand transmitted from a first antenna elementthrough a first duplexer. A second carrier transmission modulation wave outputted from a second signal generatoris amplified by a second power amplifierand transmitted from a second antenna elementthrough a second duplexer. Then, transmission modulation waves with the first and second carriers are subjected to spatial power combining after being transmitted from the two antenna elementsandthat permit diversity reception. As a result, the radio communication device, which uses two or more carriers (carrier waves), can achieve highly efficient power amplification with a small-sized low-cost circuit means.

Radio communication device

The input side and the output side of a first bandpass filter circuit BPFare magnetically coupled to each other in a jump-coupling manner by the first mutual inductance (L, L) for connection between an input port IN and the input side of the first bandpass filter circuit BPFand connection between an output port OUT and the output side of the bandpass filter circuit BPF. The input side and the output side of a second bandpass filter circuit BPFwhose center frequency is higher than that of the first bandpass filter circuit BPFare magnetically coupled to each other in a jump-coupling manner by the second mutual inductance (L, L) for connection between the input side of the first bandpass filter circuit BPFand the input side of the second bandpass filter circuit BPFand connection between the output side of the first bandpass filter circuit BPFand the output side of the second bandpass filter circuit BPF. This multiband filter circuit is capable of improving the degree of steepness by generating a number of transmission zeros in the vicinity of a plurality of passbands with a simple construction.

Multiband filter circuit and high-frequency transmitter

Between an output terminal (drain terminal) of a semiconductor device in a first unit amplifier and an output port, a &#x2212;90 degrees phase-shift circuit is connected, while between an output terminal (drain terminal) of a semiconductor device in a second unit amplifier and the output port, a +90 degrees phase-shift circuit is connected. Between the first and second ports, there is inserted a series circuit made up of first and second inductance components with an almost identical size. Then, to a middle point between the first and second inductance components, a bias feed terminal is connected, and between the middle point and a ground, a series circuit made up of a resistance component and a capacitance component is connected. The small-size balanced amplifier circuit can perform accurate balance operation in wide bands.

Balanced amplifier circuit and high-frequency communication apparatus

Configuration of a connection between an even-harmonic mixer and a filter is simplified, thereby enabling size reduction. An even-harmonic mixer and a high-frequency bandpass filter are connected to each other via a transmission line, thereby forming a filter-integrated even-harmonic mixer. The length of the transmission line is set so that impedance on the transmission line side as viewed from a connection point between the even-harmonic mixer and the transmission line is approximately 0 for a frequency fof a local oscillation signal. This allows elimination of an open stub which is used in a conventional even-harmonic mixer and of which the line length to provide equivalent grounding for the frequency fis about 1 mm. Thus, the connection portion between the even-harmonic mixer and the high-frequency bandpass filter is simplified and a compact circuit layout for the filter-integrated even-harmonic mixer is obtainable.

Filter-integrated even-harmonic mixer and hi-frequency radio communication device using the same

A millimeter band transmitter transmits one or more indirect path signal waves from the main lobe of a transmit antenna, and a direct path signal wave is transmitted in a side lobe of the transmit antenna. A receiver simultaneously receives each of the indirect and direct path signal waves if the receive antenna is unobstructed. If the direct line of sight path between the transmitter and receiver is blocked, the receiver only receives one or more of the indirect path signal waves.

Millimeter band signal transmitting/receiving system having function of transmitting/receiving millimeter band signal and house provided with the same

A balanced power amplifier includes grounded-emitter first and second bipolar transistors that are disposed in parallel, first and second variable impedance elements with each one end being electrically connected to each base of the first and second bipolar transistors, a regulator circuit disposed between the other end of the first variable impedance element and the other end of the second variable impedance element, a first resistance for electrically connecting the line between the first variable impedance element and the regulator circuit and a voltage source, and a second resistance for electrically connecting the line between the second variable impedance element and the regulator circuit and the voltage source. The balanced power amplifier is small in the number of component parts and in size.

Balanced power amplifier and high-frequency communication apparatus

A high-frequency filter circuit comprises a first coupled transmission line system (G) including a first line (TL) having a line end (A) serving as an input port () and a line end (B) serving as an open end and second and third lines (TLTL) provided on both sides of the first line (TL) and a second coupled transmission line system (G) including a first line (TL) having line end (A) serving as an output port () and a line end (B) serving as an open end and second and third lines (TLTL) provided on both sides of the first line (TL). In the first and second coupled transmission line systems (GG), the line ends (B) of the second lines (TL) and the line ends (A) of the third lines (TL) are open ends, and the line end (A) of the second line (TL) of one of the systems and the line end (B) of the third line (TL) of the other system are interconnected through phase lines (). Thus, a favorable filter characteristic of high steepness and low insertion loss can be obtained, and a high-frequency filter circuit easy to produce, suitable for MMIC, small, lightweight, and produced at low cost and a high-frequency communication device are provided.

High-frequency filter circuit and high-frequency communication device

In a distributed constant filter, two &#x3bb;/2 open line resonator are capacitive-coupled by an electromagnetic field coupling portion, and an input terminal and an output terminal are brought into mutual inductive coupling by an electromagnetic field coupling portion. The frequency of an attenuation pole can be close to a center frequency and the steepness of the filter characteristics can be increased.

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Nara, Japan

Yoshihisa Amano