Kabushiki Kaisha Kobe Seiko Sho

Kobe Steel, Ltd.

Kabushiki Kaisha Kobe Seiko Sho (kobe Steel, Ltd.)

Yoshihiro Yokota

Takeshi Tachibana

Koji Kobashi

Kazushi Hayashi

Nobuyuki Kawakami

Kenichi Inoue

Koichi Miyata

Aya Miki

Hiroshi Goto

Shinya Morita

Mototaka Ochi

Kozo Nishimura

Takashi Kobori

Yoshihiro Shintani

Shinya Fukuma

Toshihiro Kugimiya

Shigeto Adachi

Koji Inoue

Maki Hamaguchi

Koichi Makii

Kyoji Zaitsu

Katsumi Yoshino

Hiroyuki Okuno

Takeaki Maeda

Hidenori Akiyama

Akira Kobayashi

Kazuhiko Asahara

Maeda Takeaki

This heat sink has bonded on one surface a member to be bonded, and has a cooling member in contact with the other surface. The heat sink is provided with a metal plate having a thermal expansion coefficient larger than that of the member to be bonded, and the metal plate is provided with a center portion where the member to be bonded is bonded, and a plurality of linear peripheral slits formed in a whirl-like radial manner such that the linear peripheral slits surround the center portion.

Heat sink and method for manufacturing heat sink

Provided is an Al alloy film for semiconductor devices, which has excellent heat resistance and is suppressed in the generation of hillocks even in cases where the Al alloy film is exposed to high temperatures, and which has low electrical resistivity as a film. The present invention relates to an Al alloy film for semiconductor devices, which is characterized by satisfying all of the features (a)-(c) described below after being subjected to a heat treatment wherein the Al alloy film is held at 500&#xb0; C. for 30 minutes and by having a film thickness from 500 nm to 5 &#x3bc;m. (a) The maximum grain diameter of the Al matrix is 800 nm or less. (b) The hillock density is less than 1&#xd7;10pieces/m. (c) The electrical resistivity is 10 &#x3bc;&#x3a9;cm or less.

Al alloy film for semiconductor device

Provided is a direct contact technology by which a barrier metal layer between a Cu alloy wiring composed of pure Cu or a Cu alloy and a semiconductor layer can be eliminated, and the Cu alloy wiring can be directly and surely connected to the semiconductor layer within a wide process margin. The wiring structure is provided with the semiconductor layer and the Cu alloy film composed of pure Cu or the Cu alloy on a substrate in this order from the substrate side. A laminated structure is included between the semiconductor layer and the Cu alloy film. The laminated structure is composed of an (N, C, F) layer, which contains at least one element selected from among a group composed of nitrogen, carbon and fluorine, and a Cu&#x2014;Si diffusion layer, which contains Cu and Si, in this order from the substrate side. Furthermore, at least the one element selected from among the group composed of nitrogen, carbon and fluorine is bonded to Si contained in the semiconductor layer.

Wiring structure, thin film transistor substrate, method for manufacturing thin film transistor substrate, and display device

An interconnection structure, containing a substrate and, in the following order from a side of the substrate: (I) a semiconductor layer; (II) a multilayer structure including (II-a) a first layer containing at least one type of an element selected from the group consisting of nitrogen, carbon and fluorine and (II-b) an Al&#x2014;Si diffusion layer containing Al and Si; and (III) an Al film of pure Al or an Al alloy, wherein the at least one of element selected from the group consisting of nitrogen, carbon, and fluorine in the first layer is bonded with Si contained in the semiconductor layer.

Interconnection structure, a thin film transistor substrate, and a manufacturing method thereof, as well as a display device

A highly-oriented diamond film which has a flat surface but does not have non-oriented crystals in the surface can be provided by depositing a first diamond layer on a substrate by {111} sector growth of diamond crystals by a CVD method using a gaseous mixture of methane and hydrogen as material gas, and then depositing a second diamond layer on the first diamond layer by {100} sector growth of diamond crystals by a plasma CVD method using a gaseous mixture of methane, hydrogen, and oxygen as material gas under the conditions that the pressure of the material gas is 133 hPa or more; the material gas composition is determined such that ([C]&#x2212;[O])/[CH+H+O] is &#x2212;0.2&#xd7;10or more and [O]/[C] is 1.2 or less; and the substrate temperature is between 750&#xb0; C. and 1000&#xb0; C.

Highly-oriented diamond film, method for manufacturing the same, and electronic device having highly-oriented diamond film

A method for manufacturing a multilayered substrate for a semiconductor device, as well as a semiconductor device, is provided, the multilayered substrate exhibiting an excellent thermal conduction property and an excellent heat spreading effect without occurrence of warp and deformation. A diamond layer is formed through vapor phase deposition on one principal surface of a first silicon substrate by a CVD method. A SiOlayer is formed on this diamond layer. A SiOlayer is formed on a surface of a second silicon substrate by a thermal oxidation method. The diamond layer is bonded to the second silicon substrate with SiOlayers disposed on both the diamond layer and the second silicon substrate therebetween. The first silicon substrate is removed by dissolution through etching to expose the surface of the diamond layer. A silicon layer serving as a semiconductor layer is formed on the diamond layer by a CVD method.

Semiconductor device and method for manufacturing multilayered substrate for semiconductor device

An ultraviolet sensor includes a substrate; a diamond layer, placed on the substrate, functioning as a detector; and at least one pair of surface electrodes arranged on the diamond layer. The diamond layer has a detecting region present at the surface thereof, the detecting region has at least one sub-region exposed from the surface electrodes, and the sub-region has a covering layer, made of oxide or fluoride, lying thereon. A method for manufacturing the ultraviolet sensor includes a step of forming a diamond layer, functioning as a detector, on a substrate; a step of forming at least one pair of surface electrodes on the diamond layer; and a step of forming a covering layer, made of oxide or fluoride, on at least one sub-region of a detecting region present at the surface of the diamond layer, the sub-region being exposed from the surface electrodes.

Ultraviolet sensor and method for manufacturing the same

A semiconductor device and package has a heat spreader directly disposed on the reverse surface of the semiconductor device. This heat spreader includes a diamond layer or a layer containing diamond and ceramics such as silicon carbide and aluminum nitride. The heat spreader is directly formed on a substrate for the semiconductor device. In particular, the heat spreader is composed of a diamond layer and one or two metal or ceramic members, which are bonded to the diamond layer with one or two polymer adhesive layers. This diamond layer has a fiber structure across the thickness or a microcrystalline structure. Cilia are formed on a surface of the diamond layer facing the one or two metal or ceramic members.

Heat spreader and semiconductor device and package using the same

A diamond semiconductor device includes a substrate made of single crystal diamond; a first diamond layer, placed on the substrate, containing an impurity; a second diamond layer containing the impurity, the second diamond layer being placed on the substrate and spaced from the first diamond layer; and a third diamond layer which has a impurity content less than that of the first and second diamond layers, which acts as a channel region, and through which charges are transferred from the first diamond layer to the second diamond layer. The first and second diamond layers have a first and a second end portion, respectively, facing each other with a space located therebetween. The first and second end portions have slopes epitaxially formed depending on the orientation of the substrate. The third diamond layer lies over the slopes and a section of the substrate that is located under the space.

Diamond semiconductor device and method for manufacturing the same

A method of forming a diamond film includes synthesizing a diamond film on a surface of a substrate, where the surface of the substrate has trenches. The trenches inhibit delamination of the diamond film.

Method of forming diamond film

Highly oxidative water containing ozone and/or OH radicals dissolved in a large amount is prepared by dissolving an oxygen rich gas at high pressure in water and then the pressure is lowered to form fine bubbles in water from the dissolved oxygen rich gas and the fine bubbles are exposed to pulse discharge. Method of and apparatus capable of forming highly oxidative water containing ozone or OH radicals at high concentration exhibiting an oxidizing performance at a level sufficient to practical use with excellent power efficiency and productivity by discharge in water.

Method of and apparatus for forming highly oxidative water

An organic LED is provided that can stably and efficiently emit light as a result of a heat resistant hole drift layer. The organic LED can include, in order, a substrate, a hole injection electrode layer, a hole drift layer, an organic light emitting layer, an electron drift layer and an electron injection electrode layer. The hole drift layer comprises a diamond film with a boron concentration of between about 1.0&times;10,and about 1.0&times;10,/cm,. An optically transparent layer can be formed on the electron injection electrode layer.

Organic light emitting device using diamond film

Diamond films and novel method to grow the diamond films can improve the performance of products utilizing diamond films. In the cathodoluminescence taken at room temperature, the integrated intensity ratio of the diamond films, CL.sub.1 /CL.sub.2, is equal or greater than 1/20, where CL.sub.1 is the integrated intensity of the emission band in the wavelength region shorter than 300 nm while CL.sub.2 is the integrated intensity of the emission band in the wavelength region from 300 nm to 800 nm. Such high quality diamond films with intensive coalescence on the surface can be obtained by deposition on the substrates or films, made of at least one member selected from the group consisting of platinum, platinum alloys, iridium, iridium alloys, nickel, nickel alloys, silicon, and metal silicides.

Diamond films and methods for manufacturing diamond films

A method is related to grow monocrystalline diamond films by chemical vapor deposition on large area at low cost. The substrate materials are either bulk single crystals of Pt or its alloys, or thin films of those materials deposited on suitable supporting materials. The surfaces of those substrates must be either (111) or (001), or must have domain structures consisting of (111) or (001) crystal surfaces. Those surfaces can be inclined within .+-.10 degree angles from (111) or (001). In order to increase the nucleation density of diamond, the substrate surface can be scratched by buff and/or ultrasonic polishing, or carbon implanted. Monocrystalline diamond films can be grown even though the substrate surfaces have been roughened. Plasma cleaning of substrate surfaces and annealing of Pt or its alloy films are effective in growing high quality monocrystalline diamond films.

Methods for manufacturing monocrystalline diamond films

A method is presented to manufacture substrates for growing monocrystalline diamond films by chemical vapor deposition (CVD) on large area at low cost. The substrate materials are either Pt or its alloys, which have been subject to a single or multiple cycle of cleaning, roller press, and high temperature annealing processes to make the thickness of the substrate materials to 0.5 mm or less, or most preferably to 0.2 mm or less, so that either (111) crystal surfaces or inclined crystal surfaces with angular deviations within .+-.10 degrees from (111), or both, appear on the entire surfaces or at least part of the surfaces of the substrates. The annealing is carried out at a temperature above 800.degree. C. The present invention will make it possible to markedly improve various characteristics of diamond films, and hence put them into practical use.

Growing community of inventors

Kobe, Japan

Yoshihiro Yokota