Sharp Kabushiki Kaisha Corporation

Sumitomo Electric Industries, Limited

The Ritsumeikan Trust

Yoshihiro Ueta

Takayuki Yuasa

Mototaka Taneya

Shigetoshi Ito

Yuhzoh Tsuda

Kensaku Motoki

Noboru Iwata

Atsushi Ogawa

Masahiro Araki

Zenpei Tani

Teruyoshi Takakura

Masaki Yamamoto

Takeshi Kamikawa

Hisayuki Utsumi

Shinichi Handa

Eiji Satoh

Takayuki Naka

Tazuko Kitazawa

Daisuke Honda

Masumi Kubo

Hiroyuki Furukawa

Youhei Nakanishi

Hirohisa Yamada

Masafumi Ueno

Masayuki Kanehiro

Toshiyuki Okumura

Makoto Izumi

Yoshihiko Tani

Kazuhiko Inoguchi

Hirofumi Yoshikawa

Tadashi Takeoka

Yusuke Sakakibara

Chie Toridono

Daisuke Toyoshima

Takahiro Doe

Masataka Ohta

Tadashi Kobashi

Masaya Ueda

Zenken Kin

Shuhichiroh Yamamoto

Satoru Yamamoto

Masataka Iwasaki

Yuichi Sano

Kazuya Araki

Yoshinobu Aoyagi

Misaichi Takeuchi

A quantum dot includes: an inner barrier layer; a quantum well layer formed on at least a part of the inner barrier layer, wherein a presence or absence of the quantum well layer or a thickness of the quantum well layer varies from location to location on the inner barrier layer; and an outer barrier layer formed on a surface of the quantum well layer opposite to a surface adjacent to the inner barrier layer.

Quantum dot, self-luminous device, and method for manufacturing quantum dot

A light-emitting element includes the following: a cathode; an anode; a light-emitting layer provided between the cathode and the anode; an electron transport layer provided between the cathode and the light-emitting layer; and a potential well provided between the cathode and the light-emitting layer, and being a region having a larger electron affinity than a surrounding region.

Light-emitting element and light-emitting device

A light-emitting element according to the present invention includes an anode, a hole transport layer, and a light-emitting layer containing a quantum dot, and a cathode in this order, and the hole transport layer includes an n+-type semiconductor layer, and a p+-type semiconductor layer adjacent to the n+-type semiconductor layer and disposed closer to the light-emitting layer than the n+-type semiconductor layer.

A photoelectric conversion element includes: a first electrode and a second electrode; a photoelectric conversion layer between the first electrode and the second electrode; and a carrier transport layer between the photoelectric conversion layer and the second electrode, the carrier transport layer containing a plurality of carrier transport particles and a plurality of organic ligands, the carrier transport layer having a first end potion located close to the photoelectric conversion layer in a thickness direction of the carrier transport layer and a second end potion located close to the second electrode in the thickness direction of the carrier transport layer, wherein a first minimum distance between the plurality of carrier transport particles in the first end potion and the photoelectric conversion layer is larger than a second minimum distance between the plurality of carrier transport materials particles in the second end potion and the second electrode.

Photoelectric conversion element, display device, and method of manufacturing photoelectric conversion element

A light-emitting element includes: a first electrode; a first carrier transport layer in electrical contact with the first electrode; a second electrode separated from the first electrode; a second carrier transport layer in electrical contact with the second electrode; and a light-emitting layer, wherein at least part of the light-emitting layer overlaps on part of the first carrier transport layer, and part of the light-emitting layer overlaps on part of the second carrier transport layer, and in plan view, the first carrier transport layer and the second carrier transport layer face each other with the light-emitting layer provided in between.

Light-emitting element and display device, and production method for light-emitting element

A light-emitting element includes: a first electrode; a second electrode disposed opposite the first electrode; a light-emitting layer disposed between the first electrode and the second electrode and containing quantum dots; and a carrier transport layer disposed between the first electrode and a surface of the light-emitting layer on a second electrode side, including a plurality of protrusions extending toward the second electrode side, and containing a carrier transport material, wherein at least parts of the plurality of protrusions of the carrier transport layer and at least parts of a plurality of gaps between the plurality of protrusions are covered by the quantum dots.

Light-emitting element and method of manufacturing light-emitting element

A light-emitting device includes, on a substrate, a red pixel electrode and a green pixel electrode, a common electrode, and a blue pixel electrode, in order from the substrate side, and includes a transparent region adjacent to a light-emitting region including a position overlapping the red light-emitting layer, the green light-emitting layer, and the blue light-emitting layer in a plan view. At least a part of the blue light-emitting layer overlaps the red light-emitting layer and the green light-emitting layer adjacent to the red light-emitting layer in the plan view.

Light emitting device

A light-emitting device includes a light-emitting layer containing: quantum dots serving as light emitters; and dummy flakes not involved in emitting light. The quantum dots are localized. Thanks to such features, light generated from the quantum dots is diffracted in the light-emitting layer, directed in a normal direction that is a thickness direction of an array substrate, and emitted out of the light-emitting device.

Light emitting device and method for manufacturing light emitting device

In a light-emitting device, a first electrode, a light-emitting layer, and a second electrode are disposed in the order recited. Moreover, a charge transport layer is disposed between the first electrode and the light-emitting layer and/or between the second electrode and the light-emitting layer. A third electrode at least partly overlaps the light-emitting layer. Moreover, the third electrode is disposed between the charge transport layer and the light-emitting layer.

Light-emitting device and driving method for light-emitting device

A light-emitting element includes an anode, an HTL, an EML, an ETL, and a cathode layered in this order, the HTL includes at least one protruding portion protruding in a layering direction, and an IL overlapping the protruding portion in a plan view is provided between the protruding portion and the EML.

Light-emitting element and display device

A display device includes: a first subpixel including a quantum dot light-emitting layer configured to emit light of a first color: a second subpixel including a quantum dot light-emitting layer configured to emit light of a second color different from the light of the first color: a third subpixel including a quantum dot light-emitting layer configured to emit light of a third color different from the light of the first color and the light of the second color: and a data processing circuit configured to receive a first input data corresponding to the first subpixel, a second input data corresponding to the second subpixel, and a third input data corresponding to the third subpixel. The data processing circuit generates first output data corresponding to a first data voltage supplied to the first subpixel by using the first input data, the second input data, and the third input data.

Display device

A technique is provided that improves the efficiency of electron and hole injection in a light-emitting element containing quantum dots in a light-emitting layer thereof and hence improves the luminous efficiency thereof. The light-emitting element includes on a substrate: a positive electrode; a negative electrode; a quantum-dot layer between the positive electrode and the negative electrode, the quantum-dot layer including a stack of a plurality of luminous, first quantum dots and a plurality of non-luminous, second quantum dots; a hole transport layer between the positive electrode and the quantum-dot layer; and an electron transport layer between the negative electrode and the quantum-dot layer, the plurality of second quantum dots being more numerous in an electron transport layer side than in a hole transport layer side.

Light-emitting element including luminous quantum dots and non-luminous quantum dots, display device including light-emitting element thereof, and method of manufacturing light- emitting element thereof

A light-emitting device includes a light-emitting part. The light-emitting part contains a quantum dot. The quantum dot has a core and a shell. The shell is located outside the core. Each of the core and the shell has a hexagonal structure. The lattice constant of the core is larger than the lattice constant of the shell.

Light-emitting device containing quantum dots and method for manufacturing same

A light-emitting element includes: an electron transport layer; a hole transport layer; and a light-emitting layer between the electron transport layer and the hole transport layer, the light-emitting layer including: quantum dots; and ligands coordinated to the quantum dots, wherein the ligands in the light-emitting layer have a lower concentration on an electron transport layer side of the light-emitting layer than on a hole transport layer side of the light-emitting layer.

An electroluminescent element including an anode, a cathode, and a light-emitting layer provided between the anode and the cathode, in which the electroluminescent element further includes an electron transport layer [[() including n-type semiconductor particles and a first insulating polymer, and a hole transport layer including p-type semiconductor particles, the electron transport layer is provided between the cathode and the light-emitting layer, the hole transport layer is provided between the anode and the light-emitting layer, and a volume proportion of the n-type semiconductor particles in the electron transport layer is smaller than a volume proportion of the p-type semiconductor particles in the hole transport layer.

Electroluminescent element and electroluminescent device each having electron transport layer including n-type semiconductor particles and insulating polymer

Growing community of inventors

Yamatokoriyama, Japan

Yoshihiro Ueta