Idemitsu Kosan Company, Limited

National University Corporation Tokai National Higher Education and Research System

Yoshihiro Ueoka

Shigekazu Tomai

Emi Kawashima

Yuki Tsuruma

Takashi Sekiya

Motohiro Takeshima

Satoshi Katsumata

Hiroshi Amano

Yoshio Honda

Yoshikazu Nagasaki

Maki Kushimoto

Kenichi Sasaki

Masashi Oyama

Manato Deki

A stacked body comprising: a semiconductor layer comprising a group III-V nitride semiconductor, and an electrode layer, wherein the electrode layer comprises magnesium oxide and zinc oxide, wherein the molar ratio of magnesium based on the sum of magnesium and zinc of the electrode layer [Mg/(Mg+Zn)] is 0.25 or more and 0.75 or less, and conductivity of the electrode layer is 1.0×10S/cm or more.

Light emitting device with electrode having specified molar ratio of magnesium to zinc

A sintered body, containing zinc, magnesium and oxygen as constituent elements, wherein the atomic ratio of zinc to the sum of zinc and magnesium [Zn/(Zn+Mg)] is 0.20 to 0.75, the atomic ratio of magnesium to the sum of zinc and magnesium [Mg/(Zn+Mg)] is 0.25 to 0.80, and the sintered body consists of a single crystal structure as measured by X-ray diffraction.

Sintered body

A laminated body comprising a substrate, one or more layers selected from a contact resistance reducing layer and a reduction suppressing layer, a Schottky electrode layer and a metal oxide semiconductor layer in this order.

Laminated body

A structure including a metal oxide semiconductor layer and a noble metal oxide layer, wherein the metal oxide semiconductor layer and the noble metal oxide layer are adjacent to each other, and a film thickness of the noble metal oxide layer is more than 10 nm.

Structure, method for manufacturing same, semiconductor element, and electronic circuit

A semiconductor devicewhich comprises a pair of an ohmic electrodeand a Schottky electrodeseparated from each other, and a semiconductor layerin contact with the ohmic electrodeand the Schottky electrode, and which satisfies the following formula (I): in which n is a carrier concentration (cm) of the semiconductor layer, &#x3b5; is a dielectric constant (F/cm) of the semiconductor layer, Vis a forward effective voltage (V) between the ohmic electrode and the Schottky electrode, q is an elementary charge (C), and L is a distance (cm) between the ohmic electrode and the Schottky electrode.

Semiconductor device and electric apparatus using same

A laminated body comprising a substrate, an ohmic electrode layer, a metal oxide semiconductor layer, a Schottky electrode layer and a buffer electrode layer in this order, wherein a reduction suppressing layer is provided between the Schottky electrode layer and the buffer electrode layer.

Growing community of inventors

Chiba, Japan

Yoshihiro Ueoka