Mitsubishi Electric Corporation

Mitsubishi Denki Kabushiki Kaisha

Yoshihiro Tsukahara

Ko Kanaya

Yoshinobu Sasaki

Hitoshi Kurusu

Naoki Kosaka

Takao Ishida

Shinsuke Watanabe

Makoto Kimura

Takeshi Yuasa

Kiyoshi Ishida

Shin Chaki

Kohei Nishiguchi

Shinichi Miwa

Makio Komaru

A semiconductor device includes a multi-layer board which a wiring pattern and a grounding pattern are formed. A plurality of semiconductor elements are mounted on the multi-layer board. An insulating sealing member is provided on the multi-layer board and is covering the plurality of semiconductor elements. A metal film is provided on the insulating sealing member. An in-groove metal is provided in contact with a plurality of grooves extending from a side-surface upper end of the insulating sealing member to a side-surface lower end of the multi-layer board. An in-hole metal is provided in an inner wall of a hole penetrating through the insulating sealing member and is extending to the multi-layer board. The in-hole metal is contacting with the metal film and the grounding pattern.

Semiconductor device and method for manufacturing semiconductor device

A current reuse FET amplifier according to the present invention provides an effect of reducing a variation of bias current of the amplifier, with gate voltage or a resistor for self-biasing of an FET of the amplifier changing in accordance with a process variation of saturation current Idss of the FET.

Current reuse field effect transistor amplifier

A semiconductor device includes a semiconductor substrate in which a through hole is formed, a transistor formed on the upper surface side of the semiconductor substrate, a detection circuit formed on the upper surface side of the semiconductor substrate and connected to the transistor, a dielectric film covering the transistor and the detection circuit, a solder bump formed on the dielectric film, and a pad electrode having a first portion connected to an output of the detection circuit in the through hole, and a second portion connected to the first portion and provided on a lower surface of the semiconductor substrate.

Semiconductor device

A surface mount high-frequency circuit is configured such that a plurality of ground padsand a plurality of external connection ground conductorsare discretely disposed to surround a signal line padand an external connection signal line conductorand a plurality of interlayer connection ground conductorsand that a plurality of columnar ground conductorsare discretely disposed to surround an interlayer connection signal line conductorThus, it is possible to suppress radiation of an unnecessary signal to the outside using a simple production process that is completed by only a wafer process without separately preparing a component such as a shield cover case.

Surface mount high-frequency circuit

An inductor includes a first coil, an input terminal electrically connected to an outermost portion of the first coil, a first insulating film on the first coil, a second coil on the first insulating film, a second insulating film on the second coil, a third coil on the second insulating film, connection conductors that connect the first coil to the second coil at locations so that a signal propagates through outside portions of the first coil and the second coil before propagating through other portions of the first coil and the second coil, a central portion connection conductor that connects a central portion of the first coil or a central portion of the second coil to a central portion of the third coil, and an output terminal electrically connected to an outermost portion of the third coil.

Inductor and MMIC

A frequency multiplier includes an input terminal, an output terminal, a first transistor having a first gate to which a radiofrequency signal is input from the input terminal, a first drain from which an output signal is issued to the output terminal, and a first source, a second transistor having a second gate, a second source to which the radiofrequency signal is input from the input terminal, and a second drain from which an output signal is issued to the output terminal, and a stabilizing resistor which is a resistor connected to the second gate, wherein no resistor exists on the path for the radiofrequency signal, and wherein the stabilizing resistor suppresses a reflex gain produced by the second transistor.

Frequency multiplier

A power amplifier includes a semiconductor substrate including transistor cells, a drain electrode for the transistor cells located on the semiconductor substrate, a drain pad located on the semiconductor substrate and connected to the drain electrode, an ion-implanted resistance located in the semiconductor substrate and extending along and in contact with the drain pad, a floating electrode located on the semiconductor substrate and in contact with the ion-implanted resistance, and an output matching circuit located outside the semiconductor substrate. The power amplifier further includes a wire connecting the drain pad to the output matching circuit.

Power amplifier

A first spiral inductor is provided on the semiconductor substrate. A dielectric film covers the first spiral inductor. A second spiral inductor is provided on the dielectric film. A connecting portion penetrates the dielectric film and electrically connects a first inner end portion of the first spiral inductor to a second inner end portion of the second spiral inductor. Winding direction of the first spiral inductor from a first outer end portion toward the first inner end portion is the same as the winding direction of the second spiral inductor from a second inner end portion toward the second outer end portion. A wire of the second spiral inductor is disposed opposite the first spiral inductor with the dielectric film between them. The wire of the second spiral inductor is disposed in gaps between windings of the first spiral inductor, when viewed in a plan view.

Semiconductor device with inductor having interleaved windings for controlling capacitance

A method for manufacturing a semiconductor device comprises: forming a circuit pattern and a first metal film on a first major surface of a body wafer; forming a through-hole penetrating the body wafer from a second major surface of the body wafer and reaching the first metal film; forming a second metal film on a part of the second major surface of the body wafer, on an inner wall of the through-hole, and on the first metal film exposed in the through-hole; forming a recess on a first major surface of a lid wafer; forming a third metal film on the first major surface of the lid wafer including inside the recess of the lid wafer; with the recess facing the circuit pattern, and the first metal film contacting the third metal film, joining the lid wafer to the body wafer; and dicing the joined body wafer and lid wafer along the through-hole.

Method for manufacturing semiconductor device

A switch circuit includes: first, second, and third input-output terminals; a first switching element connected between the first and second input-output terminals; a second switching element connected between the third input-output terminal and a grounding point; a third switching element connected between the first and third input-output terminals; a fourth switching element connected between the second input-output terminal and the grounding point; a first control voltage applying terminal connected to control terminals of the first and second switching elements; a second control voltage applying terminal connected to control terminals of the third and fourth switching elements; first and second resistors connected between the control terminals of the first and second switching elements and the first control voltage applying terminal, respectively; and first and second diodes connected in parallel with the first and second resistors, respectively, and having cathodes connected to the first control voltage applying terminal.

Switch circuit having improved RF power characteristics

In making an airbridge structure, a second resist layer is applied over a first resist layer. The resist layers are exposed and developed to have a predetermined width W. A third resist layer is applied. The third resist layer is also exposed and developed to have a predetermined width W. An airbridge-forming material layer is applied to the layer stack structure consisting of the first, second, and third resist layers, forming an airbridge. The resist layers are removed, completing the manufacture of the airbridge, which has a stepped cross section.

Method of manufacturing airbridge

A semiconductor switch includes a main line, branch lines branching from the main line at the same branch point, switching devices shunt-connected between one of the branch lines and ground and operated so that the one of the branch lines is connected to and disconnected from ground, a main terminal connected to an end of the main line, and branch terminals connected to an end of one of the branch lines. The impedance of one of the branch lines, as seen from the branch point, is conjugately matched to the combined impedance of the main line and the rest of the branch lines, as seen from the branch point, the one of the branch lines transmitting an RF signal, and the rest of the branch lines blocking the RF signal.

Semiconductor switch, transceiver, transmitter, and receiver

A power amplifier includes an input terminal, an input matching circuit connected to the input terminal, an amplifying transistor having a gate connected to the input matching circuit, an output matching circuit connected to the drain of the amplifying transistor, an output terminal connected to the output matching circuit, and an inverting differentiator circuit for either inverting and then differentiating, or differentiating and then inverting, a signal from the input terminal. The output of the inverting differentiator circuit is connected to the gate.

Power amplifier and MMIC using the same

A semiconductor switch for switching a signal according to input power and maintaining performance of a receiver system with a simple configuration. The semiconductor switch comprises: a first FET connected between a first input/output terminal and a second input/output terminal; a first transmission line connected between the first input/output terminal and a third input/output terminal; a second transmission line parallel to the first transmission line; and a detector circuit connected to one end of the second transmission line, for outputting a DC voltage corresponding to power level of the high frequency signal, branched by the second transmission line. The first FET is controlled and switched according to an output from the detector circuit to switch between a route from the first input/output terminal to the second input/output terminal and a route from the first input/output terminal to the third input/output terminal.

Semiconductor switch, semiconductor switch MMIC, changeover switch RF module, power resistance switch RF module, and transmitter and receiver module

A millimeter waveband switch which enables high isolation without increasing passing loss, includes a first switching element that is connected in series between input and output terminals through which a signal passes; and a first transmission line having an electrical length of &#xbd; wavelength and which is connected in parallel with the first switching element. Alternatively, the millimeter waveband switch may include: a first switching element having a first end connected in parallel to input and output terminals through which a signal passes; a first transmission line having an electrical length of &#xbd; wavelength which is connected in parallel with the first switching element; and a second transmission line having an electrical length of &#xbc; wavelength and which is connected between aground and a second end of her first switching element.

Growing community of inventors

Tokyo, Japan

Yoshihiro Tsukahara