Tdk Corporation

Headway Technologies, Incorporated

Rohm Co., Ltd.

Sae Magnetics (h.k.) Limited

Yoshihiro Tsuchiya

Koji Shimazawa

Shinji Hara

Tomohito Mizuno

Tsutomu Chou

Daisuke Miyauchi

Takahiko Machita

Hironobu Matsuzawa

Kei Hirata

Satoru Araki

Masashi Sano

Yasuhiro Ito

Seiichi Takayama

Nobuyuki Mori

Hayato Koike

Osamu Shindo

Kiyoshi Noguchi

Keita Kawamori

Toshiyuki Ayukawa

Kosuke Tanaka

Yoshitaka Sasaki

Takashi Honda

Ryuji Fujii

Xuhui Jin

Koichi Terunuma

Tobias Maletzky

Takumi Uesugi

Cherng-Chyi Han

Migaku Takahashi

Weihao Xu

Yiming Wang

Masakiyo Tsunoda

Kenji Sakai

Kouji Shimazawa

Shuji Okame

Atsushi Yamaguchi

Satoshi Miura

Haruyuki Morita

Tetsuro Sasaki

Kenji Inage

Takafumi Kobayashi

Matteo Staffaroni

Tsuyoshi Ichiki

Tomihito Mizuno

A TAMR (thermally assisted magnetic recording) write head uses a gap-based NFT (near-field transducer) to create plasmon near field energy. In one embodiment the NFT is a double ridge aperture structure that simultaneously delivers low transition curvature and better cross-track thermal gradients than previous designs. In another embodiment a NFT comprises a top and bottom ridge not confined to an aperture structure, made of thermo-mechanically stable materials and a parabolic shaped metal layer disposed adjacent to a dielectric waveguide core to couple optical energy to surface plasmon modes.

Double ridge near-field transducers

A method for manufacturing a TAMR (thermal assisted magnetic recording) write head. The write head has a metal blocker formed against a distal end of a waveguide. The waveguide focuses optical radiation on an adjacent plasmon generator where it excites plasmon modes that heat the recording medium. Although the plasmon generator typically heats the recording medium using the plasmon near field to supply the required Joule heating, an unblocked waveguide would also send optical radiation to the medium and surrounding structures producing unwanted heating and device unreliability. The role of the blocker is to block the unwanted optical radiation and, thereby, to limit the heating to that supplied by the plasmon near field.

Method for manufacturing thermally-assisted magnetic recording head with waveguide blocker

A plasmon generator generates surface plasmon and generates near-field light from the surface plasmon at a distal end surface situated on an air bearing surface facing a magnetic recording medium. The plasmon generator has a first portion including the distal end surface, a second portion situated away from the air bearing surface, and a separating layer situated between the first portion and the second portion and separating the first portion from the second portion.

Plasmon generator with separating layer for thermal assisted magnetic recording head

A manufacturing method of laser diode unit of the present invention includes steps: placing a laser diode on top of a solder member formed on a mounting surface of a submount, applying a pressing load to the laser diode and pressing the laser diode against the solder member, next, melting the solder member by heating the solder member at a temperature higher than a melting point of the solder member while the pressing load is being applied, and thereafter, bonding the laser diode to the submount by cooling and solidifying the solder member, thereafter, removing the pressing load, and softening the solidified solder member by heating the solder member at a temperature lower than the melting point of the solder member after the pressing load has been removed, and thereafter cooling and re-solidifying the solder member.

Method of manufacturing laser diode unit utilizing submount bar

A TAMR (thermal assisted magnetic recording) write head has a metal blocker formed against a distal end of a waveguide. The waveguide focuses optical radiation on an adjacent plasmon generator where it excites plasmon modes that heat the recording medium. Although the plasmon generator typically heats the recording medium using the plasmon near field to supply the required Joule heating, an unblocked waveguide would also send optical radiation to the medium and surrounding structures producing unwanted heating and device unreliability. The role of the blocker is to block the unwanted optical radiation and, thereby, to limit the heating to that supplied by the plasmon near field.

Plasmon generator with metallic waveguide blocker for TAMR

A thermal assisted magnetic recording head that performs magnetic recording while locally heating a magnetic recording medium includes: a plasmon generator that generates a surface plasmon and that generates near-field light from the surface plasmon on a front end surface positioned on an air bearing surface opposing the magnetic recording medium; a dielectric body layer positioned around the plasmon generator; and an adhesion layer positioned between the plasmon generator and the dielectric body layer. The adhesion layer is made from at least one of IrOx, RuOx, NiOx and CoOx.

Thermal assisted magnetic recording head with plasmon generator

A plasmon generator generates a surface plasmon, and generates a near-field light from the surface plasmon on a front end surface positioned on an air bearing surface opposing to a magnetic recording medium. The plasmon generator has a first surface that is adjacent to the front end surface and that faces a lower layer where the plasmon generator is deposited, and a second surface at the back side of the first surface relative to a down track direction. The first surface tilts toward a surface that is orthogonal to the down track direction, and, is parallel to across track direction, and the plasmon generator is deposited with a (111) orientation from the first surface toward the second surface.

Plasmon generator with (111) oriented tip portion for thermal assisted magnetic recording head

A thin film magnetic head includes a magnetoresistive effect (MR) laminated body that has the following structure: first and second magnetic layers in which the magnetization direction of at least one of the magnetic layers changes according to an external magnetic field; the first magnetic layer is provided at a lower side of a laminated direction; the second magnetic layer is provided at an upper side of the laminated direction; a non-magnetic intermediate layer made of ZnO sandwiched between the first and the second magnetic layers; a first intermediate interface layer is provided at the interface between the first magnetic layer and the non-magnetic intermediate layer; and a second intermediate interface layer is provided at the interface between the non-magnetic intermediate layer and the second magnetic layer. At least the first intermediate interface layer contains Ag and Zn, or Au and Zn.

Magnetoresistance effect element having layer containing Zn at the interface between magnetic layer and non-magnetic intermediate layer

Apparatus and method of manufacturing laser diode unit utilizing submount bar

A method of manufacturing a magnetoresistive (MR) effective element having a pair of magnetic layers and a nonmagnetic intermediate layer including a ZnO film, wherein a relative angle of magnetization directions of the pair of magnetic layers varies according to an external magnetic field. The method includes a step for introducing a mix gas of oxygen gas and argon gas into a depressurized chamber, wherein a first target of ZnO, a second target of Zn and a substrate having a right-below layer are disposed in the chamber, and a step for depositing the ZnO film on the right-below layer by applying each of a first and second direct current (DC) application power to spaces between the first and second targets and the substrate respectively after the mix gas introducing step, wherein the first and second targets are set at negative potential, and the substrate is set at positive potential.

Method for manufacturing magnetoresistance effect element using simultaneous sputtering of Zn and ZnO

A magneto-resistive effect (MR) element includes first and second magnetic layers in which a relative angle formed by magnetization directions changes responsive to an external magnetic field, and a spacer layer positioned between the first and second magnetic layers. The first magnetic layer is positioned closer to a substrate above which the MR element is formed than the second magnetic layer. The spacer layer includes copper and metal intermediate layers and a main spacer layer composed primarily of gallium oxide. The copper and metal intermediate layers are positioned between the main spacer and first magnetic layers. The metal intermediate layer is positioned between the copper and main spacer layers. The metal intermediate layer is composed primarily of at least one from a group of one of magnesium and at least partially oxidized magnesium, and one of aluminum and at least partially oxidized aluminum.

Magneto-resistive effect element having spacer layer including main spacer layer containing gallium oxide and metal intermediate layer

A magneto-resistive effect (MR) element includes: first and second magnetic layers in which a relative angle formed by magnetization directions changes according to an external magnetic field; and a spacer layer positioned between the first magnetic layer and the second magnetic layer. The spacer layer includes a main spacer layer composed of gallium oxide as a primary component and containing at least one metal element selected from a group of magnesium, zinc, indium and aluminum.

Magneto-resistive effect element having spacer layer including gallium oxide layer with metal element

A magneto-resistive effect (MR) element includes first and second magnetic layers where a relative angle formed by magnetization directions changes in response to an external magnetic field and a spacer layer positioned between the first magnetic layer and the second magnetic layer. The first magnetic layer is positioned closer to a substrate above which the MR element is formed than the second magnetic layer. The spacer layer includes a main spacer layer that is composed of gallium oxide as a primary component and a bottom layer that is positioned between the main spacer layer and the first magnetic layer and that is composed of partially oxidized copper as a primary component.

Magneto-resistive effect element having spacer layer containing gallium oxide, partially oxidized copper

A thin film magnetic head including an MR laminated body composed of a first and second MR magnetic layers, first and second shield layers, and a bias magnetic field application layer provided on an opposite side of an air bearing surface (ABS) of the MR laminated body in order to apply a bias magnetic field orthogonal relative to the ABS. The first shield layer includes a first exchange coupling magnetic field application layer and a first antiferromagnetic layer; and the second shield layer includes a second exchange coupling magnetic field application layer and a second antiferromagnetic layer.

Thin film magnetic head having a pair of magnetic layers whose magnetization is controlled by shield layers

The invention provides a giant magneto-resistive effect device of the CPP (current perpendicular to plane) structure (CPP-GMR device) comprising a spacer layer, and a first ferromagnetic layer and a second ferromagnetic layer stacked together with said spacer layer sandwiched between them, with a sense current passed in the stacking direction, wherein the first ferromagnetic layer and the second ferromagnetic layer function such that the angle made between the directions of magnetizations of both layers change relatively depending on an external magnetic field, said spacer layer contains a semiconductor oxide layer, and a nitrogen element-interface protective layer is provided at a position where the semiconductor oxide layer forming the whole or a part of said spacer layer contacts an insulating layer. Thus, there is a nitride of high covalent bonding capability formed at the surface of junction between the semiconductor oxide layer and the interface protective layer, so that the migration of oxygen from the semiconductor oxide layer to the insulating layer is inhibited; even when the device undergoes heat and stress in the process, fluctuations and deteriorations of device characteristics are held back.

CPP type magneto-resistive effect device and magnetic disk system

Growing community of inventors

Tokyo, Japan

Yoshihiro Tsuchiya