Sharp Kabushiki Kaisha Corporation

Yoshihiro Seguchi

Hidenobu Kimoto

Tetsuya Tarui

Takehisa Sugimoto

A pixel electrode is formed from a transparent conducting film. A gate insulating layer includes a region including a portion of a thin-film transistor that makes contact with a semiconductor layer and a thinned region. The pixel electrode is disposed over a part of the thinned region. A dielectric layer is in direct contact with another part of the thinned region. An upper surface of the gate insulating layer has a stepped portion. The stepped portion includes a stepped portion that extends flush with a side surface of a lower layer of a drain electrode. The pixel electrode extends over at least a part of the stepped portion and at least a part of the side surface of the lower layer of the drain electrode from above the thinned region and is connected to an upper layer of the drain electrode.

Active matrix substrate and method for manufacturing active matrix substrate

There are provided a display device including a highly reliable wiring having excellent adhesion to an insulating film, and a method for manufacturing the same. A molybdenum-niobium layer has good adhesion to an insulating film, and thus, a first wiring having the molybdenum-niobium layer as an upper layer wiring is tightly adhered to a gate insulating film which is formed on the surface of the upper layer wiring. When there is a need to exchange a semiconductor chip mounted on a connection terminal that is provided at an end portion of a wiring such as a gate lead line or a source lead line formed of the first wiring, an ACF which was used for pressure-bonding of the semiconductor chip remains on the connection terminal even if the semiconductor chip is peeled off. To thoroughly remove the ACF, a force has to be applied to the connection terminal, but because the gate insulating film is tightly adhered to the molybdenum-niobium layer, the gate insulating film protecting the periphery of the connection terminal is not easily peeled off.

Method for manufacturing display device including a wiring layer of a molybdenum-based material

An active matrix substrate in a liquid crystal panel of an FFS mode has a data lineincluding an amorphous Si film, an n+amorphous Si film, a main conductor part, and an IZO film. The main conductor partand the IZO filmare etched at a portion close to the end of a covered region of a photoresist, to form the n+amorphous Si filmlarger than the main conductor partand the IZO film. A pattern of a photomask for a source layer is made larger than a pattern of a photomask for a pixel electrode layer, to form the amorphous Si filmlarger than the n+amorphous Si film. The main conductor partis formed of a molybdenum-based material, and in a layer over the data line, two-layered protective insulating films are formed such that a compressive stress is generated in one film and a tensile stress is generated in the other film. Accordingly, a high-yield active matrix substrate having a common electrode is provided.

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Sakai, Japan

Yoshihiro Seguchi