The Furukawa Electric Co., Ltd.

Bridgestone Corporation

Hitachi Media Electronics Co., Ltd.

Nec Corporation

Horiba, Ltd.

Sankyo Company, Limited

Dai Nippon Insatsu Kabushiki Kaisha

Fuji Electric Co., Ltd.

Victor Company of Japan, Limited

Tohoku University

Hitachi Consumer Electronics Co., Ltd.

Harada Kogyo Kabushiki Kaisha

Toyo Ink Sc Holdings Co., Ltd.

Tokai Carbon Company, Ltd.

Longitude Licensing Limited

Yoshihiro Sato

Sadahiro Kato

Takehiko Nomura

Masayuki Iwami

Katsuhiko Kimura

Seikoh Yoshida

Hiroshi Kambayashi

Seiichi Kato

Takahiro Ono

Hidenao Saito

Jun Hato

Satoshi Hattori

Nariaki Ikeda

Takahiro Yamaguchi

Yuki Niiyama

Takuya Kokawa

Shin Tominaga

Shigeki Shinoda

Yukio Saito

Daisuke Ikefuji

Tadahiro Ohmi

Tetsuya Kaneko

Katsunori Ueno

Hiroyuki Hayashi

Satoshi Maeda

Shusuke Kaya

Kenji Yamamoto

Yoshiro Konishi

Akinobu Teramoto

Hitoshi Sasaki

Tateo Muramatsu

Hidemichi Fujiwara

Jiang Li

Tatsuya Yamasaki

Yukio Honkawa

Takeshi Kohno

Ryuichiro Mizuno

Masatoshi Ikeda, Legal Representative

Koichi Sekiya

Satoshi Tagomori

Mamoru Takasaki

Hiroaki Takahasi

Masao Fujisawa

Toru Oya

Yasushi Enami

Kunio Terada

Yoshitaka Tone

Shinya Ootomo

Tetsuya Natsumoto

Yasuki Nakajima

Norzafriza Nitta

Takashi Ohba

Takuya Sakoda

Masato Ohashi

Koh Li

Keiko Saito

Tadashi Someda

Shoji Naito

Shunji Mitani

Takayuki Aoki

Masaki Iwasawa

Noboru Takemoto

Kiharu Natsumi

Chisato Kaneko

A bonding film for bonding a semiconductor element and a substrate. The bonding film has an electroconductive bonding layer formed by molding an electroconductive paste including metal fine particles (P) into a film form, and a tack layer having tackiness and laminated on the electroconductive bonding layer. The tack layer includes 0.1% to 1.0% by mass of metal fine particles (M) with respect to the metal fine particles (P) in the electroconductive bonding layer, and the metal fine particles (M) have a melting point of 250° C. or lower.

Bonding film, tape for wafer processing, method for producing bonded body, and bonded body and pasted body

An activity support apparatus supports an activity of a worker at a disaster site. The activity support apparatus comprises a position acquisition unit that acquires a position of the worker, a boundary data acquisition unit that acquires boundary data that indicates a boundary of a building at the disaster site, and an entry determination unit that determines whether the worker has entered the building based on the positions of the worker acquired at different timings and the boundary data.

Activity support apparatus, activity support method, and computer readable recording medium

An activity support apparatus supports an activity of a worker at a disaster site. The activity support apparatus comprises a vibration data acquisition unit that acquires vibration data of vibrations generated by the worker, an activity level estimation unit that estimates an activity level of the worker based on the vibration data acquired by the vibration data acquisition unit, and a notification unit that notifies the activity level estimated by the activity level estimation unit.

A semiconductor device comprises the following: a wiring substrate having on one side a recessed section and a plurality of connection pads; a first semiconductor chip mounted in the recessed section; a second semiconductor chip that has a plurality of electrode pads on the surface of at least one end section (in this case, both ends) and that is laminated onto the first semiconductor chip so that at least one end section (in this case, both ends) protrudes from the first semiconductor chip; a plurality of wires that mutually and electrically connect the plurality of connection pads of the wiring substrate and the plurality of electrode pads of the second semiconductor chip. One end section of the second semiconductor chip extends beyond the inner surface of the recessed section and is supported by one side of the wiring substrate.

Semiconductor device having wires connecting connection pads

Provided is a method for easily producing an oxidized carbon black aqueous dispersion that can highly remove multivalent metal ions and exhibit excellent dispersion stability. A method for producing an oxidized carbon black aqueous dispersion by successively performing on an aqueous slurry of oxidized carbon black having one or more anionic functional groups on a surface thereof a neutralization step of mixing an alkali metal hydroxide and performing heating/neutralization in the presence of one or more selected from a water-soluble chelating agent and a salt thereof or after mixing an alkali metal hydroxide and performing heating/neutralization, mixing one or more selected from a water-soluble chelating agent and a salt thereof and a separation and removal step of separating and removing a multivalent metal ion chelate complex from a mixed solution obtained at the neutralization step using a separation membrane.

Method for producing oxidized carbon black aqueous dispersion, and method for producing oxidized carbon black aqueous dispersion for inkjet ink

Provided is an adhesive which, in a metal foil-containing laminated composite film used in a high temperature sterilization treatment, is resistant to the effects of moisture in the air during curing, has good workability when used as a solvent-free adhesive, and exhibits excellent adhesive strength and acid resistance. Provided is a method for producing an adhesive composition, the method including: a step of obtaining an alcohol-added isocyanate (E) by reacting a trifunctional or higher isocyanate compound (C2) and a monofunctional alcohol (D) at an equivalence ratio of isocyanate groups in the trifunctional or higher isocyanate compound (C2):monofunctional alcohol (D)=100 mol %:25 to 65 mol %, and a step of mixing a polyisocyanate (A) containing a trifunctional or higher isocyanate compound (C1) and the alcohol-added isocyanate (E), and an alcohol (B) having an acid value of 0.5 to 30 mgKOH/g, so that the equivalence ratio between isocyanate groups in the polyisocyanate (A) and hydroxyl groups in the alcohol (B) (isocyanate groups/hydroxyl groups) is within a range from 0.7 to 2.5.

Adhesive composition and laminate

The semiconductor transistor according the present invention includes an active layer composed of a GaN-based semiconductor and a gate insulating film formed on the active layer. The gate insulating film has a first insulating film including one or more compounds selected from the group consisting of AlO, HfO, ZrO, LaO, and YOformed on the active layer, and a second insulating film composed of SiOformed on the first insulating film.

Semiconductor transistor

High-performance and reliable objective lens driving apparatus and optical pickup wherein the tilt of an objective lens relative to an optical disc is suppressed are provided. The optical pickup is equipped with a semiconductor laser, an electro-optic component, and the objective lens driving apparatus. In this optical pickup, the objective lens driving apparatus is comprised of: a moving part including an objective lens, a holder that holds the objective lens, a focusing coil, and a tracking coil; a holding member for elastic support members that couples together multiple elastic support members providing elastic support on a fixed part and the moving part and is mounted on the moving part; the elastic support members that elastically support the moving part from the fixed part; and the fixed part. The holding member for elastic support members mounted on the moving part and the holder that holds the objective lens are joined together by fitting together a concavity and a convexity.

Objective lens driving apparatus, optical pickup

A field effect transistor has an MOS structure and is formed of a nitride based compound semiconductor. The field effect transistor includes a substrate; a semiconductor operating layer having a recess and formed on the substrate; an insulating layer formed on the semiconductor operating layer including the recess; a gate electrode formed on the insulating layer at the recess; and a source electrode and a drain electrode formed on the semiconductor operating layer with the recess in between and electrically connected to the semiconductor operating layer. The recess includes a side wall inclined relative to the semiconductor operating layer.

Field effect transistor having semiconductor operating layer formed with an inclined side wall

Provided is a dry lamination method, and a laminate having superior appearance obtained by the method. The method in which an adhesive having a solid matter content of 35 wt % or more diluted in a solvent is applied onto a film according to a gravure process, the solvent is volatilized, and the resulting film is adhered with another film to obtain a laminate, wherein the adhesive is applied by: a gravure cylinder in which the screen number of gravure cylinder is 135 to 270 lines/inch and cell volume is 10 to 30 cc/m; a gravure cylinder which is engraved by an electronic engraving machine to have a stylus angle of 120 to 140&#xb0; and the screen number of gravure cylinder of 120 to 270 lines/inch; or a ceramic roll in which the screen number of gravure cylinder is 135 to 350 lines/inch and cell volume is 10 to 30 cc/m.

Dry lamination method and laminate obtained by using the same

In an optical pickup equipped with a semiconductor laser, electro-optical components such as a lens, and an objective lens drive device, the objective lens drive device includes objective lenses, a holder holding the objective lenses, a focusing coil, and tracking coils. The focusing coil is wound in parallel to the optical surface of the objective lens, and formed in a parallelogram shape having inclined portions provided near the tracking coils. The two tracking coils are placed on diagonal portions of the lens holder.

Objective lens drive device and optical pickup

A field effect transistor includes a high resistance layer on a substrate, a semiconductor operation layer that is formed on the high resistance layer and includes a channel layer that has the carbon concentration of not more than 1&#xd7;10cmand has the layer thickness of more than 10 nm and not more than 100 nm, a recess that is formed up to the inside of the channel layer in the semiconductor operation layer, source and drain electrodes that are formed on the semiconductor operation layer with the recess intervening therebetween, a gate insulating film that is formed on the semiconductor operation layer so as to cover the recess, and a gate electrode that is formed on the gate insulating film in the recess.

Field effect transistor, method of manufacturing field effect transistor, and method of forming groove

A semiconductor device includes an element forming region including at least one semiconductor element formed on at least one compound semiconductor layer formed on a substrate and a trench formed between an outer edge of the semiconductor device and the element forming region. The trench spatially separates the compound semiconductor layer, and the trench is formed at least to reach the substrate.

Semiconductor device, wafer structure and method for fabricating semiconductor device

An objective lens actuator, for driving an objective lensfor focusing lights upon a recoding surface of an optical disc, comprises a moving part, which comprises the objective lensand a coil; a magnet, which is fixed on a yoke and drives the moving part; a plural number of elastic support parts, each of which supports the moving partat an end thereof; a first fixing portionand a second fixing portion, which fix other ends of the plural number of elastic support partsand are disposed opposite to each other in a focus direction; and a moving mechanism, which is provided on the first and second fixing portionand, so that the first and second fixing portionsandcan move in the focus direction, relatively, and thereby providing the objective lens actuatorenabling to reduce the dynamic relative tilt between the optical disc and the objective lens(i.e., reducing the tilt of the objective lensin the tangential direction when operating), as well as, an optical pickup and an optical disc drive.

Objective lens actuator for enabling to reduce the dynamic tilt between optical disc and objective lens

An optical pickup, mounting a lens actuatorthereon, the lens actuator comprises: a lenshaving an optical axis in direction in parallel with an optical disc; a holderwhich holds the lens thereon; a first guide shaftholding the holder, so as to regulate the holder to change a position thereof, into an inner surface direction of a surface having the optical axis of the lens as a normal line vector thereof; a second guide shaftwhich regulates the holder to change the position thereof, into a normal line vector of an optical disc; and a reed screw, which moves the holder into direction of the optical axis of the lens, wherein a distance between the optical axis of the lens and the optical disc, a distance between a central axis of the first guide shaft and the optical disc, and a distance between a central axis of the second guide shaft and the optical disc are lager than a distance between a central axis of the reed screw and the optical disc.

Lens driving mechanism for optical pickup and optical disc apparatus

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Tokyo, Japan

Yoshihiro Sato