Sumitomo Electric Industries, Limited

Fujitsu Corporation

Nissan Motor Company Limited

Sumitomo Electric Hardmetal Corp.

Yoshihiro Saito

Takashi Kyono

Masahiro Adachi

Kazuyuki Mori

Haruyo Fukui

Hiroyuki Nobuhara

Yoshiharu Utsumi

Shinji Tokuyama

Norio Nagase

Daiji Tabayashi

Kazuya Tokuda

Kakuji Inoue

Yo Akimoto

Hajime Takamatsu

Masaki Ueno

Masaaki Hirano

Hiroshi Onaka

Yuki Kawaguchi

Yutaka Kai

Makoto Kiyama

Yoshiaki Tamura

Takamichi Sumitomo

Koji Katayama

Tetsuya Haruna

Kazumasa Kubotera

Komei Yazaki

Tsuneo Endo

Shigeru Sakai

Yojiro Nakayama

Yutaka Hoshina

A gallium arsenide single crystal substrate includes a main surface having a circular shape and has a first integrated intensity ratio or a second integrated intensity ratio. The first integrated intensity ratio and the second integrated intensity ratio are obtained from a spectrum, based on a predetermined X-ray photoelectron spectroscopy, of each of arsenic and gallium. The number of particles each having a major axis of 0.16 μm or more is 2 or less per cmof the main surface.

Gallium arsenide single crystal substrate and method of manufacturing same

Provided is a cutting tool comprising a base body and a hard carbon film arranged on the base body, in which the hard carbon film includes an amorphous phase and a graphite phase, the degree of crystallinity of the hard carbon film is no more than 6.5%, and the degree of orientation of the graphite phase is no more than 6.

Cutting tool

Provided is a cutting tool that can have a long tool life even when used to cut soft metals in particular. The cutting tool comprises a base body and a hard carbon film arranged on the base body, the hard carbon film includes an amorphous phase and a graphite phase, the density of the hard carbon film is no less than 2.5 g/cmand no more than 3.5 g/cm, the degree of crystallinity of the hard carbon film is no more than 6.5%, and the average coordination number of the amorphous phase is no less than 2.5 and no more than 4.

An optical fiber containing an alkali metal and capable of reducing Rayleigh scattering loss is provided. An optical fiber has a core and a cladding made of silica glass and enclosing the core. The cladding contains fluorine and has a refractive index lower than the refractive index of the core. The core contains first group dopants selected from the group of Na element, K element, or a compound thereof at an average concentration of 0.2 ppm or more and 10 ppm or less. The core also contains second group dopants for reducing the viscosity of silica glass and having a diffusion coefficient of 1&#xd7;10cm/s or more and smaller than the diffusion coefficient of the first group dopants, by an average concentration of 0.2 ppm or more at a temperature of 2000&#xb0; C. to 2300&#xb0; C.

Optical fiber

A Group III nitride semiconductor device has a semiconductor region, a metal electrode, and a transition layer. The semiconductor region has a surface comprised of a Group III nitride crystal. The semiconductor region is doped with a p-type dopant. The surface is one of a semipolar surface and a nonpolar surface. The metal electrode is provided on the surface. The transition layer is formed between the Group III nitride crystal of the semiconductor region and the metal electrode. The transition layer is made by interdiffusion of a metal of the metal electrode and a Group III nitride of the semiconductor region.

Group III nitride semiconductor device

A semiconductor device has a satisfactory ohmic contact on a p-type principal surface tilting from a c-plane. The principal surfaceof a p-type semiconductor regionextends along a plane tilting from a c-axis (axis &#x3c;0001&#x3e;) of hexagonal group-III nitride. A metal layeris deposited on the principal surfaceof the p-type semiconductor region. The metal layerand the p-type semiconductor regionare separated by an interfacesuch that the metal layer functions as a non-alloy electrode. Since the hexagonal group-III nitride contains gallium as a group-III element, the principal surfacecomprising the hexagonal group-III nitride is more susceptible to oxidation compared to the c-plane of the hexagonal group-III nitride. The interfaceavoids an increase in amount of oxide after the formation of the metal layerfor the electrode.

Ohmic contact on a p-type principal surface tilting with respect to the c-plane

The present invention relates to the selected-wavelength tuning apparatus which is provided with an AOTF, a radio-frequency signal generator, an optical detector, and a controller for detecting lights emitted from the AOTF with the optical detector and for controlling a frequency of the radio-frequency generator so as to detect a light of predetermined wavelength.

Selected-wavelength tuning filter and optical add/drop multiplexer

A transisterized circuit may be driven with a low voltage without saturation of a direct current operating voltage point. The transisterized circuit includes a first transisterized circuit formed by a cascade connection of a first differential transisterized circuit and a first emitter follower circuit, a second transisterized circuit formed by a cascade connection of a second emitter follower circuit and a second differential transistor circuit, and an inversion circuit connected between said first transisterized circuit and said second transistor circuit.

Operating voltage point compensation circuit for a transistorized circuit

A burst optical signal receiver receives optical signals produced in a burst form from a predetermined subscribers. This burst optical signal receiver comprises an identifying circuit for comparing the input level of an input optical signal with a predetermined threshold value to identify the input level; a peak detector for detecting and holding the peak value of the input optical signal; a DC feedback circuit for acquiring the DC level of an output of the identifying circuit; and a circuit for producing the predetermined threshold value from the DC level from the DC feedback circuit and the peak value held in the peak detector and supplying the predetermined threshold value to the identifying circuit. The peak detector has a plurality of peak detection sections having different gains and operational dynamic ranges and causes those peak detection sections to operate in accordance with the input level of the input optical signal.

Burst optical signal receiver

A transmission is connected with a manually operable control or shift lever by a control rod which transmits a driver's manual movement to the transmission. In order to prevent a resonance of the control rod from being caused by vibration of the engine, the control rod is divided into two parts which are connected end to end by a joint. There is further provided a support rod which supports the control lever and the control rod. The support rod extends substantially in parallel with the control rod, and both of its ends are connected, respectively, to a vehicle body or a housing of the transmission. The support rod has bearing means for swingably supporting the control lever and an arm which supports the control rod, at the either one of its two parts, rotatably and axially slidably.

Gear shift control linkage of transmission

The present invention relates to a bracket which can mount different units to a vehicle body without the use of additional spacers or the like. The bracket has an offset support bolt so that upon the bracket being seated in a 180 degree reversed orientation, the bolt assumes a new position with respect to the vehicle body so that a different unit can be mounted using the same number of parts.

Support bracket

Growing community of inventors

Yokohama, Japan

Yoshihiro Saito