Kyocera Corporation

Yoshihiro Okawa

Yasunori Kawanabe

Yuusaku Ishimine

Takeshi Muneishi

Masahiro Okumura

Nobuyoshi Fujikawa

Shunichi Murakawa

Masanobu Ishida

Tatsuji Furuse

Masahiro Nakahara

Seiichiro Hirahara

Takehiro Oda

Kenichiro Miyahara

Tetsuji Hayasaki

Toshiyuki Sue

Shinya Terao

Yoshihiro Komatsu

Masao Asai

Kouji Enokida

A heater includes a base, a resistive heating body, and a terminal portion. The base is formed of ceramic and has a plate shape. The resistive heating body is located in the base. The terminal portion is electrically connected to the resistive heating body. The base includes a protruding portion surrounding the terminal portion, on a lower surface side. The protruding portion is formed of a ceramic member, and the terminal portion passes through a through hole formed in the ceramic member. The ceramic member is bonded to at least one of the lower surface of the base or the terminal portion.

Ceramic structure and wafer system

A base structure includes a base, a first conductor layer, and a via conductor. The base has a first surface. The first conductor layer is positioned along the first surface in the base. The via conductor includes a first part and a second part in a section that includes the via conductor and that extends in a first direction perpendicular to the first surface. The length of the first part in the first direction is larger than the thickness of the first conductor layer. The length of the second part in the first direction is larger than the thickness of the first conductor layer. The second part is continuous with the first part, and at least a portion of the outer edge of the second part is displaced from the outer edge of the first part when viewed in the first direction.

Base structure and wafer placing device

A structural body (A toE) according to the present disclosure includes a base (D,E), a first electrode layer (), a second electrode layer (), a first via conductor (), a second via conductor (), and a connection conductor (). The base (D,E) is composed of a ceramic. The first electrode layer () and the second electrode layer () are located inside the base (D,E). The first via conductor () and the second via conductor () are located inside the base (D,E) and connect the first electrode layer () and the second electrode layer (). The connection conductor is located inside the base (D,E), and connects the first via conductor and the second via conductor.

Structural body and heating apparatus

A heater includes a base body, resistance heating element, and terminal part. The base body comprises ceramic, is plate shaped, and includes a hole on its lower surface. The resistance heating element is inside the base body. The terminal part is electrically connected to an internal conductor, is at least partially located inside the base body, and is exposed from a lower surface of the base body to an exterior of the base body. The terminal part includes a connection conductor that is inserted in the hole and connected to the internal conductor. A lower surface of the connection conductor is located on a side closer to the upper surface of the base body. The hole includes a reduced-diameter portion which has a diameter smaller than a diameter of the connection conductor between the lower surface of the connection conductor and the lower surface of the base body.

A heater includes a base body and a resistance heating element. The base body is configured by an insulating material and includes a top surface on which a wafer is placed. The resistance heating element extends in the base body along the top surface. A top surface of the resistance heating element and the base body are in contact with each other. A vacuum or gas-filled gap is interposed between a side surface of the resistance heating element and the base body.

Heater and method of production of same

An electrostatic chuck includes an insulating base body including a predetermined surface, and an electrode inside the base body, which is layer shaped along the predetermined surface. An upper surface of the electrode facing a side where the predetermined surface is located and the base body are in contact. A gap which is rendered a vacuum or filled with a gas is interposed between a side surface of the electrode and the base body.

Electrostatic chuck and method for manufacturing same

A board-like structure includes a base body, an internal conductor, and a terminal member. The base body is an insulating member including an upper surface and a lower surface on an opposite side to the upper surface. The internal conductor runs along the upper surface and the lower surface inside the base body. The terminal member is at least partially located inside the base body, is exposed to an external portion of the base body at the lower surface, and is electrically connected to the internal conductor. The terminal member includes an insulating terminal base part and a conductor layer on a surfaces of the terminal base part.

Board-like structure and heater system

A heater includes a plate-shaped part, one or more resistance heating element, a columnar part, and a plurality of relay conductors. The plate-shaped part has an insulation property and includes an upper surface on which a wafer is to be superimposed and a lower surface on an opposite side to the upper surface. The one or more resistance heating element is buried in the plate-shaped part. The columnar part has an insulation property and projects downward from the lower surface of the plate-shaped part. The plurality of relay conductors respectively include extension portions vertically extending inside the columnar part and are electrically connected to the one or more resistance heating elements.

Wafer-use member, wafer-use system, and method for manufacturing wafer-use member

Disclosed is a corrosion resistant member comprising a sintered material having an &#x3b1;-AlOcrystal and an YAG (yttrium-aluminum-garnet) crystal. The corrosion resistant member contains metal elements, 70 to 98% by mass (inclusive) of Al in terms of AlOand 2 to 30% by mass of Y in terms of YO. The corrosion resistant member has a peak intensity ratio I/Iwithin the range from 0.94 to 1.98, preferably. 2.21 or higher, wherein Iand Irepresent peak intensities attributed to the (116) face and the (104) face, respectively, of an &#x3b1;-AlOcrystal as measured by X-ray diffractometry on its surface layer.

Corrosion-resistant member, treatment apparatus and sample treatment method using the member, and method for manufacture of corrosion-resistant member

A support for capillaries comprises a ceramic member having a flat surface area on which the capillaries are to be aligned. The flat surface area has a flatness of not more than 0.02 mm and has a mean spacing of waviness motifs (AW) of not more than 100 &#x3bc;m.

Support for capillaries, case for constraining capillaries including the same

A silicon nitride sintered material includes a silicon nitride crystal and a grain boundary layer that contains at least two of a first metal silicide (a metal silicide having, as a first metal element, at least one selected from the group consisting of Fe, Cr, Mn and Cu), a second metal silicide (a metal silicide having, as a second metal element, at least one of W or Mo) and a third metal silicide (a metal silicide having a plurality of metal elements including the first metal element and the second metal element), wherein the grain boundary layer has neighboring phase where at least two of the first through third metal silicides exist in contact with each other.

Silicon nitride sintered material and method for manufacturing

The electromagnetic wave absorber of the present invention is made of a sintered body that contains Fe and at least one element selected from Si, Mg, Zr, Ni, Al and Co, and an attenuation of electromagnetic wave is 2 dB or more at frequencies of 10 GHz and higher so as to provide good electromagnetic wave absorbing characteristic with no corrosive gas generated at all, and is easy to manufacture. The electromagnetic wave absorber is used mainly as a component of a high-frequency circuit package.

Electromagnetic wave absorber and high-frequency circuit package using the same

The dielectric porcelain of the present invention comprises a polycrystalline material of which a main component comprises oxides containing at least a rare earth element (Ln), Al, M (M represents Ca and/or Sr) and Ti as metal elements, wherein the thickness of a grain boundary layer is 20 nm or less, thereby achieving a high value of &egr;r, high Q factor and small absolute value of the temperature coefficient &tgr; of resonant frequency in a high frequency region. Thus this dielectric porcelain is preferably used in dielectric resonators.

Dielectric porcelain and resonator using the same

The present inventions provides a dielectric ceramic comprising an oxide containing, as a metal element, at least a rare earth element (Ln), Al, M (M is Ca and/or Sr) and Ti, and at least part of the oxide of Al being present as a crystal phase of &bgr;-Al O and/or &thgr;-Al O thereby having a high &egr; r, high Q value and a small temperature coefficient of resonance frequency in a high frequency region.

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Kagoshima, Japan

Yoshihiro Okawa