National Institute of Advanced Industrial Science and Technology

Japan Science and Technology Agency

Yoshihiro Ogawa

Masashi Kawasaki

Yoshinori Tokura

Yoshio Kaneko

Hiroyuki Yamada

H Nat Inst Of Adv Ind Sce & Techn Yamada

Y Nat Inst Of Adv Ind Sce & Techn Tokura

M Nat Inst Of Adv Ind Sce & Techn Kawasaki

To provide a tunnel junction device having a high MR ratio even at room temperature, a tunneling film as a nonmagnetic layer of three-layer structure of LaMnO/SrTiO/LaMnOis arranged between a ferromagnetic metal material LaSrMnO() and a ferromagnetic metal film material LaSrMnO(). The tunneling film comprises two unit layers of LaMnO(A) arranged on the ferromagnetic metal material LaSrMnO(); five unit layers of SrTiO(B); and two unit layers of LaMnO(C) arranged at the interface between the SrTiO(B) and the ferromagnetic metal film material LaSrMnO().

Tunnel junction device having oxide ferromagnetic electroconductive electrodes and three-layer structure tunneling film

The present invention provides a magnetic sensor capable of reproducing a magnetic record even if the size of a recorded magnetization is a minute one, directly reading a magnetization recorded on a magneto-optical disk without applying incident light itself to the magneto-optical disk, and obtaining signals of a second harmonic having a high S/N ratio. This magnetic sensor includes a magnetic sensor element () having electric polarization disposed with respect to a perpendicular recording medium (), and laser generating means acting on the magnetic sensor element (). The magnetic sensor reads information in the perpendicular recording medium () based on the variation of the rotation angle &#x3c6; of the polarization plane of a second harmonic () of a frequency 2&#x3c9; exiting the magnetic sensor element () by the application of laser light () with a frequency &#x3c9; from the laser generation means to the magnetic sensor element ().

Magnetic sensor

Growing community of inventors

Tsukuba, Japan

Yoshihiro Ogawa