Shin-etsu Chemical Co., Ltd.

Yoshihiro Nojima

Shinji Aoki

Kazuya Tobishima

Yoshihiro Kubota

Shoji Akiyama

Makoto Kawai

Kouichi Tanaka

Yuji Tobisaka

Atsuo Ito

Shinji Makikawa

Mitsuhito Takahashi

Masanori Ikari

Akio Ikesue

A method for producing a quantum dot including crystalline nanoparticle fluorescent material, wherein, using a first precursor solution and a second precursor solution containing different elements each other, the second precursor solution is sprayed as an aerosol on the heated first precursor solution, or both the first precursor solution and the second precursor solution are sprayed on a heated solvent as aerosols, and the first precursor solution and the second precursor solution are reacted with each other to synthesize a core particle containing the different elements. The method for producing quantum dots, can suppress the non-uniformity of the particle size of the quantum dots and accompany increase in the distribution of emission wavelengths in large scale synthesis.

Method for producing a quantum dot

A method for producing coated semiconductor nanoparticles, comprising a step of coating the surface of semiconductor nanoparticles with a metal oxide, wherein the surface of the semiconductor nanoparticles is coated with the metal oxide by treating a metal oxide precursor with microwave irradiation treatment.

Coated semiconductor nanoparticles and method for producing the same

A quantum dot has a fluorescent crystalline nanoparticle, wherein the quantum dot has a core-shell structure including a core particle containing a first metal element and a shell layer containing a second metal element, at an interface between the core particle and the shell layer, a third metal element different from the first metal element and the second metal element is present, and an amount of the third metal element with respect to an amount of the first metal element contained in the core particle is 10% or less in terms of molar ratio. As a result the quantum dot has excellent controllability of the emission wavelength and high luminous properties and luminous efficiency.

Quantum dot, wavelength conversion material, backlight unit, image display device, and method for manufacturing quantum dot

A quantum dot including fluorescent crystalline nanoparticle, wherein surface of the quantum dot is modified with a ligand containing fluorine. The quantum dots include fluorescent crystalline nanoparticles which have high stability and are less likely to agglomerate when added to a fluororesin.

Quantum dot, quantum dot composition, wavelength conversion material, wavelength conversion film, backlight unit and image display device

A resin composition containing a base resin and quantum dots that are crystalline nanoparticle phosphors, the base resin containing a fluorine-containing resin. This provides a resin composition capable of enhancing the stability of quantum dots.

Resin composition, wavelength conversion material, wavelength conversion film, LED device, backlight unit, and image display apparatus

A quantum dot including a semiconductor crystal particle having a particle diameter of 20 nm or less, and a ligand having two or more functional groups for interaction with the semiconductor crystal particle coordinates to two or more sites on a surface of the semiconductor crystal particle. A quantum dot with enhanced stability through surface modification on the semiconductor crystal particle by using a ligand which has two or more functional groups for interaction with the semiconductor crystal particle, and which coordinates to two or more sites on the semiconductor particle surface.

Quantum dot, method for producing the same, resin composition, wavelength conversion material, and light emitting device

The present invention is a polishing composition, containing zirconium oxide as abrasive grains, the polishing composition having pH of 11.0 or more and less than 12.5, the zirconium oxide having element concentrations of sodium, magnesium, aluminum, potassium, calcium, titanium, chromium, iron, manganese, nickel, copper, zinc, lead, and cobalt of less than 1 ppm each. There can be provided a polishing composition that enables semiconductor substrates having high flatness not only in the inner circumferential portion but also in the outer circumferential portion with little contamination due to metal impurities to be obtained at high productivity.

Polishing composition, method for producing same, and polishing method

A polishing agent for a synthetic quartz glass substrate, containing polishing particles and water includes ceria particles as base particles, and composite oxide particles of cerium and at least one rare earth element selected from trivalent rare earth elements other than cerium are supported on surfaces of the base particles. This provides a polishing agent for a synthetic quartz glass substrate, the polishing agent having high polishing rate and being capable of sufficiently reducing generation of defects due to polishing.

Polishing agent for synthetic quartz glass substrate and method for polishing synthetic quartz glass substrate

A starting material powder, which contains a rare earth oxide that is composed of terbium oxide and at least one other rare earth oxide selected from among yttrium oxide, scandium oxide and oxides of lanthanide rare earth elements (excluding terbium) and a sintering assistant that is formed of an oxide of at least one element selected from among group 2 elements and group 4 elements, is produced by having (a) terbium ions, (b) ions of at least one other rare earth element selected from among yttrium ions, scandium ions and lanthanide rare earth ions (excluding terbium ions) and (c) ions of at least one element selected from among group 2 elements and group 4 elements coprecipitate in an aqueous solution containing the components (a)-(c), then filtering and separating the coprecipitate, and subjecting the separated coprecipitate to thermal dehydration.

Method for producing transparent ceramic,transparent ceramic, magneto-optical device and rare earth oxide powder for sintering

The present invention is a polishing agent for a synthetic quartz glass substrate, containing polishing abrasive grains, a polishing accelerator, and water, wherein the polishing abrasive grains are wet ceria particles, and the polishing accelerator is a polyphosphoric acid, a salt thereof, a metaphosphoric acid, a salt thereof, a tungstic acid, or a salt thereof. There can be provided a polishing agent for a synthetic quartz glass substrate that has high polishing rate and can sufficiently reduce generation of defects due to polishing.

Method for producing transparent ceramic, transparent ceramic, magneto-optical device and rare earth oxide powder for sintering

A polishing composition includes crystalline metal oxide particles as abrasive grains, wherein the full width at half maximum of a peak portion having the maximum diffracted intensity in an X-ray powder diffraction pattern of the metal oxide particles is less than 1&#xb0;. Thus, a polishing composition and a polishing method have high polishing speed and suppress defect generation such as a scratch and dishing, which causes to degrade reliability of a semiconductor apparatus in a polishing process of a semiconductor substrate, particularly in a chemical mechanical polishing process of a semiconductor substrate with a metal layer having tungsten, etc.; and a method produces the polishing composition.

Polishing composition, polishing method, and method for producing polishing composition

Provided is a method of manufacturing a transparent sesquioxide sintered body by which a transparent MOtype sesquioxide sintered body can be manufactured. A powder including particles of an oxide of at least one rare earth element selected from Y, Sc or lanthanide elements and Zr oxide particles is prepared as a raw material powder, wherein in the particle size distribution of the rare earth element oxide particles, or in the particle size distribution of secondary particles in the case where the rare earth element oxide particles are agglomerated to form the secondary particles, the particle diameter Dvalue at which the cumulative particle amount from the minimum particle size side is 2.5% based on the total particle amount is in the range from 180 nm to 2000 nm, inclusive. The raw material powder is press molded into a predetermined shape, followed by sintering.

Method of manufacturing transparent sesquioxide sintered body, and transparent sesquioxide sintered body manufactured by the method

A method of manufacturing a laminated wafer is provided by forming a silicon film layer on a surface of an insulating substrate comprising the steps in the following order of: applying a surface activation treatment to both a surface of a silicon wafer or a silicon wafer to which an oxide film is layered and a surface of the insulating substrate followed by laminating in an atmosphere of temperature exceeding 50&#xb0; C. and lower than 300&#xb0; C., applying a heat treatment to a laminated wafer at a temperature of 200&#xb0; C. to 350&#xb0; C., and thinning the silicon wafer by a combination of grinding, etching and polishing to form a silicon film layer.

Method of manufacturing laminated wafer by high temperature laminating method

To provide a method of manufacturing a laminated wafer by which a strong coupling is achieved between wafers made of different materials having a large difference in thermal expansion coefficient without lowering a maximum heat treatment temperature as well as in which cracks or chips of the wafer does not occur. A method of manufacturing a laminated waferby forming a silicon film layer on a surfaceof an insulating substratecomprising the steps in the following order of: applying a surface activation treatment to both a surfaceof a silicon waferor a silicon waferto which an oxide film is layered and a surfaceof the insulating substratefollowed by laminating in an atmosphere of temperature exceeding 50&#xb0; C. and lower than 300&#xb0; C., applying a heat treatment to a laminated waferat a temperature of 200&#xb0; C. to 350&#xb0; C., and thinning the silicon waferby a combination of grinding, etching and polishing to form a silicon film layer.

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Annaka, Japan

Yoshihiro Nojima