Fujitsu Corporation

Shinko Electric Industries Co., Ltd.

Tokyo Electron Limited

Ebara Corporation

Fujitsu Semiconductor Limited

Fujitsu Microelectronics Limited

Jgc Catalysts & Chemicals Ltd.

Catalysts & Chemicals Industries Co., Ltd.

Kyushu Fujitsu Electronics Limited

Yoshihiro Nakata

Ei Yano

Shirou Ozaki

Yasushi Kobayashi

Tadahiro Imada

Katsumi Suzuki

Shun-ichi Fukuyama

Iwao Sugiura

Tamotsu Owada

Tsuyoshi Kanki

Junichi Kon

Yukio Takigawa

Shinya Sasaki

Kouta Yoshikawa

Michio Komatsu

Akio Rokugawa

Akira Nakashima

Norio Sawatari

Azuma Matsuura

Hideki Harada

Miki Egami

Masato Tanaka

Sadahiro Kishii

Yoshiyuki Ohkura

Shoichi Suda

Shigeaki Yagi

Michiko Kobayashi

Kozo Makiyama

Koji Nozaki

Naoya Okamoto

Toshihiro Ohki

Nobuo Kamehara

Hirofumi Watatani

Yoshikatsu Ishizuki

Hidenori Miyoshi

Yuichi Minoura

Hiroshi Kudo

Tomoaki Hayano

Junya Ikeda

Daijiro Ishibashi

Naoki Hara

Shino Tokuyo

Kenji Ishikawa

Yukiko Oshikubo

Daitei Shin

Hideki Tateishi

Yusuke Kumazaki

Joe Yamaguchi

Yoshiyuki Okura

Yuki Komatsu

Shiro Ozaki

Masanori Naitou

Syun-ichi Fukuyama

Shyun-ichi Fukuyama

Michiko Katayama

A semiconductor device with an antenna includes a heat sink having first and second surfaces, a semiconductor chip provided on the second surface and having a circuit surface, a wiring board having a laminate of alternately disposed insulating layers and interconnect layers, and covering side surfaces of the heat sink and the semiconductor chip and the circuit surface, and exposing the first surface, and an antenna provided on the wiring board. The wiring board includes a board connecting part provided on an opposite side from the antenna, a first interconnect electrically connecting the board connecting part and a first terminal provided on the circuit surface, and a second interconnect electrically connecting the antenna and a second terminal provided on the circuit surface.

Semiconductor device with antenna

A high-frequency circuit board includes: a first insulating layer having a first dielectric constant; a first metal layer provided to stack over the first insulating layer; a second insulating layer provided to stack over the first metal layer, and having a second dielectric constant lower than the first dielectric constant; a second metal layer provided to stack over the second insulating layer, on which a compound semiconductor device is mounted; and first vias penetrating the second insulating layer and connecting the first metal layer with the second metal layer.

High-frequency circuit board and antenna module

A semiconductor apparatus includes a substrate, a plurality of heat generating elements mounted on the substrate, a heat dissipation member fixed to the substrate and disposed such that the heat generating elements are interposed between the heat dissipation member and the substrate, at least one first heat conduction member provided on a first surface of the heat dissipation member, the first surface facing the heat generating elements, and a plurality of second heat conduction members each provided on a second surface of a corresponding one of the heat generating elements, the second surface facing the heat dissipation member, wherein the at least one first heat conduction member and the second heat conduction members are in contact with each other at an interface between opposing surfaces thereof.

Semiconductor apparatus and electronic apparatus

A package with built-in electronic components that is to be soldered to an electronic circuit board includes: an insulating layer; an electronic component provided on one surface of the insulating layer; and a pad which is electrically connected to the electronic component and in which a plurality of openings that extend from a first surface of the pad in contact with a solder bump to the insulating layer are formed, wherein an area of the plurality of openings at the first surface is larger than an area of the plurality of openings at a second surface of the pad, which is an opposite surface to the first surface and is in contact with the insulating layer.

Package with built-in electronic components and electronic device

A semiconductor device includes: a semiconductor substrate; an electrode pad disposed over a first face of the semiconductor substrate; a redistribution layer electrically connected to the electrode pad; a through hole disposed in the semiconductor substrate so as to extend from a second face opposite to the first face of the semiconductor substrate to the electrode pad; an electrically conductive film covering an inner wall of the through hole, and electrically connected to the electrode pad; an electrically conductive adhesive disposed on a side of the second face of the semiconductor substrate, and electrically connected to the electrode pad via the electrically conductive film; a heat radiating member bonded to the second face of the semiconductor substrate with the electrically conductive adhesive; and a filling member with which the through hole is filled, the filling member being lower in coefficient of thermal expansion than the electrically conductive adhesive.

Filling member between a heat sink and substrate

A resin board includes: a resin layer and a through electrode buried in the resin layer, wherein the through electrode has an electrode surface exposed from a front surface or a back surface of the resin layer and a lateral surface, and the electrode surface and the lateral surface form an obtuse angle.

Resin board, method of manufacturing resin board, circuit board, and method of manufacturing circuit board

A semiconductor device has a structure including a substrate, a first insulating film formed over a part of a principal plane of the substrate, a conductive portion formed over a surface of the first insulating film, and a second insulating film which covers the principal plane of the substrate, the first insulating film, and the conductive portion and whose moisture resistance is higher than moisture resistance of the first insulating film. The first insulating film is placed between the substrate and the conductive portion to prevent the generation of parasitic capacitance. The first insulating film is covered with the second insulating film whose moisture resistance is higher than the moisture resistance of the first insulating film. The second insulating film prevents the first insulating film from absorbing moisture.

Semiconductor device including insulating films with different moisture resistances and fabrication method thereof

A resist composition includes: a solvent; and a resin in the solvent, the resin being prepared by the hydrolysis and condensation of an alkoxy group-containing compound that contains an alkoxy group bound to a silicon atom or a germanium atom in the presence of an acid or an alkali, wherein a portion of the resist composition irradiated with an energy radiation is insoluble in a developing solution.

Resist composition and method for forming pattern

After a copper interconnection is formed above a substrate, a surface of the copper interconnection is activated by performing acid cleaning. Thereafter, the substrate is immersed in a BTA (Benzo triazole) aqueous solution to form a protection film covering the surface of the copper interconnection. At this time, Cu&#x2014;N&#x2014;R bonds (R is an organic group) are formed in grain boundary portions in the surface of the copper interconnection. Thereafter, the protection film is removed by performing alkaline cleaning. The Cu&#x2014;N&#x2014;R bonds remain in the grain boundary portions in the surface of the copper interconnection even after the protection film is removed. Subsequently, the surface of the copper interconnection is subjected to an activation process, and a barrier layer is formed thereafter by electroless-plating the surface of the copper interconnection with NiP or CoWP.

Interconnection structure and method of forming the same

A method of forming an interconnection structure includes forming an opening in an insulation film by a dry etching process that uses an etching gas containing fluorine; cleaning a bottom surface and a sidewall surface of the opening by exposing to a superheated steam; covering the bottom surface and the sidewall surface of the opening with a barrier metal film; depositing a conductor film on the insulation film via the barrier metal film to fill the opening with the conductor film; forming an interconnection pattern by the conductor film in the opening by polishing the conductor film and the barrier metal film underneath the conductor film by a chemical mechanical polishing process until a surface of the insulation film is exposed.

Method of forming an interconnection structure

A wiring structure includes: an insulating film formed over a substrate; a plurality of wirings formed on the insulating film; and an inducing layer, which is formed on the insulating film in a region between the plurality of wirings, a constituent atoms of the wirings are diffused in the inducing layer.

Wiring structure and manufacturing method thereof, and electronic apparatus and manufacturing method thereof

A support substrate includes a first surface and a second surface located above the level of the first surface. Chips are mounted on the first surface. A first insulating film is disposed over each chip. First conductive plugs are connected to the chip extending through each first insulating film. Filler material made of resin filling a space between chips. Wirings are disposed over the first insulating film and the filler material for interconnecting different chips. The second surface, an upper surface of the first insulating film and an upper surface of the filler material are located at the same level.

Semiconductor device and its manufacture method

The invention provides an agent for post-etch treating a silicon dielectric film, including: at least one nitrogen-containing substance selected from the group consisting of ammonium bases and amine compounds; an acid; and at least one silicon-containing compound containing silicon, carbon and hydrogen. According to the present invention, it becomes possible to suppress an increase in the dielectric constant of a silicon dielectric film caused by etching.

Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device

An insulating film material, which contains a polycarbosilane compound expressed by the following structural formula 1: where Rmay be the same or different to each other in the unit repeated 'n' times, and each represents C1-4 hydrocarbon or aromatic hydrocarbon; Rmay be the same or different to each other in the unit repeated 'n' times, and each represents C1-4 hydrocarbon or aromatic hydrocarbon; n is an integer of 5 to 5,000.

Insulating film material, multilayer wiring board and production method thereof, and semiconductor device and production method thereof

The method of manufacturing a semiconductor device includes forming an insulating film of a silicon compound-group insulation film; forming an opening in the insulation film, applying an active energy beam in an atmosphere containing hydrocarbon gas to form a barrier layer of a crystalline SiC, and forming an interconnection structure of copper in the opening with the barrier layer formed in.

Semiconductor device and method of manufacturing semiconductor device

Growing community of inventors

Kawasaki, Japan

Yoshihiro Nakata