Konica Minolta, Inc.

Yoshihiro Nakano

Koji Takahara

Miyuki Teramoto

A method for manufacturing an optical lens using an ion-assisted deposition apparatus that comprises an ion source includes: forming, on a lens substrate made of a material containing 40 mass % or more of fluoride, a first lower layer of an anti-reflection film of the optical lens, wherein the first lower layer is a fluoride layer; forming, on the first lower layer, a second lower layer of the anti-reflection film; forming on the second lower layer, one or more intermediate layers of the antireflection film; forming, on the one or more intermediate layers, an uppermost layer of the anti-reflection film; and irradiating, using the ion source, the lens substrate with ions.

Method for manufacturing optical lens provided with anti-reflection film

An optical lens with an antireflective film includes: a lens substrate; and an antireflective film disposed on the lens substrate. The antireflective film is formed of layers each having a physical thickness of 140 nm or less. In order from an air side, the antireflective film has: a first layer formed as an MgFlayer, a second layer, a fourth layer, a sixth layer, an eighth layer, and a tenth layer each having a refractive index of 2.0 or more and 2.3 or less, and a third layer, a fifth layer, a seventh layer, and a ninth layer each formed as an SiOlayer.

Optical lens with antireflective film, projection lens, and projection lens optical system

A projection lens for projecting an image onto a projection plane includes: a lens substrate; and an antireflective film disposed on a surface of the lens substrate. The antireflective film includes, in order starting from an air side of the antireflective film, a first layer, second layer, third layer, fourth layer, fifth layer, sixth layer, seventh layer, and eighth layer. The first layer is formed of MgF. Each of the second layer, the fourth layer, the sixth layer, and the eighth layer has a refractive index of 2.0 to 2.3. Each of the third layer, the fifth layer, and the seventh layer is formed of SiO.

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Tondabayashi, Japan

Yoshihiro Nakano