Sony Corporation

Fujikura Limited

Sony Group Corporation

Sony Semiconductor Solutions Corporation

Yoshihiro Nabe

Yuji Takaoka

Yoshimichi Harada

Hiroshi Asami

Masami Suzuki

Tatsuo Suemasu

Akihiro Morimoto

Hideyuki Wada

Masanobu Saruta

Masaaki Takizawa

Yuuji Kishigami

Chiaki Sakai

Masaki Hatano

Junichi Tokunaga

Noboru Kawabata

To improve strength of an imaging module with an adjusted optical axis. An imaging device includes an imaging module and a holding unit. The imaging module provided in the imaging device includes an imaging element that images incident light introduced from an upper surface of a housing. The holding unit provided in the imaging device surrounds and holds a side surface of the imaging module, the side surface being adjacent to the upper surface of the housing. The holding unit surrounds and holds the side surface of the imaging module, thereby protecting the imaging module.

Imaging device and method of manufacturing imaging device

A semiconductor device including a semiconductor substrate having oppositely facing first and second surfaces, the first surface being an active surface and provided with an electronic element thereon, a pad electrode to be connected to the electronic element in a peripheral portion of the electronic element on the active surface, a first opening extending from the second surface toward the pad electrode so as not to reach the first surface of the semiconductor substrate, a second opening formed to reach the pad electrode from a bottom surface of the first opening and having a diameter smaller than that of the first opening, an insulating layer formed to cover sidewall surfaces of the first opening and the second opening, and a conductive layer formed, inside of the insulating layer, to cover at least an inner wall surface of the insulating layer and a bottom surface of the second opening.

Semiconductor device

Semiconductor device and method of manufacturing the same

A semiconductor apparatus having a through-hole interconnection in a semiconductor substrate. An insulating layer is formed on the semiconductor substrate. A via hole is formed through the semiconductor substrate and the insulating layer. The through-hole interconnection has another insulating layer formed in the via hole and a conductive layer formed thereon. The insulating layer formed in the via hole is formed such as to substantially planarize an inner surface of the via hole.

Semiconductor apparatus having a through-hole interconnection

A semiconductor device includes a semiconductor substrate having a first electronic circuit and a second electronic circuit formed on an active surface, a pad electrode formed on the active surface by being connected to the first electronic circuit and/or the second electronic circuit, a first opening formed to some point along a depth of the semiconductor substrate toward the pad electrode from a surface opposite to the active surface of the semiconductor substrate, a second opening formed so as to reach the pad electrode from a bottom surface of the first opening, an insulating layer formed by covering sidewall surfaces of the first opening and the second opening, a conductive layer formed by covering at least an inner wall surface of the insulating layer and a bottom surface of the second opening, a third opening formed to some point along the depth of the semiconductor substrate from the surface opposite to the active surface of the semiconductor substrate, and a heat insulator imbedded in the third opening.

Semiconductor device and method for manufacturing the same

A method for manufacturing a semiconductor apparatus having a through-hole interconnection in a semiconductor substrate. An insulating layer is formed on the semiconductor substrate. A via hole is formed through the semiconductor substrate and the insulating layer. Another insulating layer is formed in the via hole, and a conductive layer of the through-hole interconnection is subsequently formed. The insulating layer formed in the via hole is formed such as to substantially planarize an inner surface of the via hole.

Method for manufacturing a semiconductor apparatus having a through-hole interconnection

A semiconductor device includes a semiconductor substrate having first and second surfaces opposite each other, the first surface being an active surface by provided with an electronic element thereon, a pad electrode formed to be connected to the electronic element in a peripheral portion of the electronic element on the active surface, a first opening extending from the second surface toward the pad electrode so as not to reach the first surface of the semiconductor substrate, a second opening, formed to reach the pad electrode from a bottom surface of the first opening, having a diameter smaller than that of the first opening, an insulating layer formed to cover sidewall surfaces of the first opening and the second opening, and a conductive layer formed, inside of the insulating layer, to cover at least an inner wall surface of the insulating layer and a bottom surface of the second opening.

A semiconductor device which includes a semiconductor chip formed with a light-reception area, a spacer, and a transparent substrate. The spacer is bonded to the semiconductor chip via a first adhesive and surrounding the light-reception area. The transparent substrate is bonded to the spacer via a second adhesive and disposed above the light-reception area. A first projection having a predetermined height is formed on a surface of the spacer which is on a side of the semiconductor chip, and the first projection abuts on the semiconductor chip.

Semiconductor device and manufacturing method therefor

A solid-state imaging device includes a semiconductor substrate having a foreside provided with an imaging area and an electrode pad, the imaging area having an array of optical sensors, the electrode pad being disposed around a periphery of the imaging area; a transparent substrate joined to the foreside of the semiconductor substrate with a sealant therebetween; underside wiring that extends through the semiconductor substrate from the electrode pad to an underside of the semiconductor substrate; and a protective film composed of an inorganic insulating material and interposed between the semiconductor substrate and the sealant, the protective film covering at least the electrode pad.

Growing community of inventors

Tokyo, Japan

Yoshihiro Nabe