Fujitsu Semiconductor Limited

Fujitsu Corporation

Fujitsu Microelectronics Limited

Yoshihiro Matsuoka

Makoto Yasuda

Akiyoshi Watanabe

Takashi Suzuki

Takahisa Namiki

Toyoji Sawada

Kazuyuki Imamura

Iwao Sugiura

Masao Oshima

The semiconductor device comprises a device isolation region formed in a semiconductor substrate, a lower electrode formed in a device region defined by the device isolation region and formed of an impurity diffused layer, a dielectric film of a thermal oxide film formed on the lower electrode, an upper electrode formed on the dielectric film, an insulation layer formed on the semiconductor substrate, covering the upper electrode, a first conductor plug buried in a first contact hole formed down to the lower electrode, and a second conductor plug buried in a second contact hole formed down to the upper electrode, the upper electrode being not formed in the device isolation region. The upper electrode is not formed in the device isolation region, whereby the short-circuit between the upper electrode and the lower electrode in the cavity can be prevented.

Capacitor and method for fabricating the same, and semiconductor device and method for fabricating the same

The semiconductor device comprises a device isolation regionformed in a semiconductor substratea lower electrodeformed in a device regiondefined by the device isolation region and formed of an impurity diffused layer, a dielectric filmof a thermal oxide film formed on the lower electrode, an upper electrodeformed on the dielectric film, an insulation layerformed on the semiconductor substrate, covering the upper electrode, a first conductor plugburied in a first contact holeformed down to the lower electrode, and a second conductor plugburied in a second contact holeformed down to the upper electrode, the upper electrode being not formed in the device isolation region. The upper electrodeis not formed in the device isolation regionwhereby the short-circuit between the upper electrodeand the lower electrodein the cavity can be prevented. Thus, a capacitor of high reliability can be provided.

Capacitor having upper electrode not formed over device isolation region

A semiconductor device includes a first multilayer interconnection structure formed on a substrate and a second multilayer interconnection structure formed on the first multilayer interconnection structure, wherein the first multilayer interconnection structure includes a pillar extending from a surface of the substrate and reaching at least the second multilayer interconnection structure.

Semiconductor device having a pillar structure

A wiring layer is provided on a semiconductor substrate and extends in a predetermined direction. An external connection electrode terminal is provided on the wiring layer through a plurality of column-shaped conductors. The column-shaped conductors are located under the external connection electrode terminal. A density of arrangement of the column-shaped conductors is varied according to a direction of extension of the wiring layer.

Semiconductor device

Growing community of inventors

Kawasaki, Japan

Yoshihiro Matsuoka