Fujitsu Corporation

Fujitsu Semiconductor Limited

The University of Tokyo

Kyushu Fujitsu Electronics Limited

Unizeo Co., Ltd.

Nat'l University Corp. Yokohama Nat'l University

Mitsui Chemicals, Inc.

Yoshihiro Kubota

Kazuto Tsuji

Toshio Hamano

Yoshiyuki Yoneda

Mitsutaka Sato

Yuichi Asano

Hiroshi Ohtsubo

Tomoyuki Fukuda

Tetsuya Fujisawa

Sumikazu Hosoyamada

Michio Hayakawa

Satoshi Inagaki

Hiroshi Inoue

Junichi Kasai

Shigeyuki Maruyama

Hirohisa Matsuki

Michio Sono

Tatsuya Okubo

Hideharu Sakoda

Toshimi Kawahara

Keiji Itabashi

Ichiro Yamaguchi

Yoshihiko Ikemoto

Seiichi Orimo

Hidehiko Suzuki

Mitsunada Osawa

Yoshitsugu Katoh

Yukio Saigo

Mitsuo Abe

Naomi Miyaji

Toyohiko Hieda

Raita Komatsu

Masami Murayama

Yoshitaka Aiba

Ryuji Nomoto

Akira Okada

Masaaki Seki

Tatsuhiro Ando

Hideo Yunoki

Takashi Tabu

Kohei Ueki

Takuji Oyama

Nobuhiko Horiuchi

Kenji Asada

Noriaki Shiba

Akihiro Okabe

Shirou Youda

Sachiko Inoue

Yoshiya Matsukawa

The method for manufacturing a modified aluminosilicate includes a first step of treating an aluminosilicate with an acid, a second step of primarily calcining the treated material obtained in the first step at 550&#xb0; C. to 850&#xb0; C., and a third step of contacting the calcined material obtained in the second step with a liquid containing one or more Group 4 elements and/or Group 5 elements, and then drying and secondarily calcining the resultant. The modified aluminosilicate includes one or more Group 4 elements and/or Group 5 elements, and exhibits an absorbance at 300 nm in an ultraviolet visible spectrum of 1.0 or higher. The method for manufacturing aromatic dihydroxy compounds includes reacting a phenol with hydrogen peroxide in the presence of a specific modified aluminosilicate.

Method for manufacturing modified aluminosilicate, modified aluminosilicate, and method for manufacturing aromatic dihydroxy compound using the same

A MSE-type zeolite which has a Si/Al ratio of 5 or more, is a proton-type zeolite, and is obtained by transforming a raw material MSE-type zeolite synthesized without using a structure directing agent into an ammonium-type zeolite through ion exchange, then, exposing the MSE-type zeolite to water vapor, and subjecting the exposed MES-type zeolite to an acid treatment.

Zeolite, manufacturing method of the same, and catalytic cracking catalyst of paraffin

Provided is a beta-type zeolite which has a high catalytic activity and is not easily deactivated. The beta-type zeolite of the invention has a substantially octahedral shape, has a Si/Al ratio of 5 or more, and is a proton-type zeolite. The Si/Al ratio is preferably 40 or more. This beta-type zeolite is preferably obtained by transforming a raw material beta-type zeolite synthesized without using a structure directing agent into an ammonium-type zeolite through ion exchange, then, exposing the beta-type zeolite to water vapor, and subjecting the exposed beta-type zeolite to an acid treatment.

Zeolite, manufacturing method of the same, and catalytic cracking batalyst of paraffin

A BGA type semiconductor device includes: a substrate having wirings and electrodes; a semiconductor element disposed on the substrate, having a rectangular plan shape, and a plurality of electrodes disposed along each side of the semiconductor element; a plurality of wires connecting the electrodes on the semiconductor element with the electrodes on the substrate; a heat dissipation member disposed on the substrate, covering the semiconductor element, and having openings formed in areas facing apex portions of the plurality of wires connected to the electrodes formed along each side of the semiconductor element; and a sealing resin member for covering and sealing the semiconductor element and heat dissipation member.

Semiconductor device with heat spreader

An electronic device has a substrate that has first and second peripheral portions. The first peripheral portion provides a shearing position for separation. The electronic device has a plurality of wiring layers one of which forms a functional surface wiring on the substrate, an electronic element mounted on the substrate, and an encapsulation member formed over the substrate and the electronic element. The surface wiring is selectively disposed under the encapsulation member and in an area adjacent to the second peripheral portion.

Package, electronic device, substrate having a separation region and a wiring layers, and method for manufacturing

A wireless LAN control device includes a wireless LAN control unit having a transmitting/receiving unit performing communications with a plurality of wireless LAN access points belonging to different user groups and a wireless LAN connection control unit. The wireless connection control unit executes control of transferring a user authentication request received by the transmitting/receiving unit via one of the plurality of wireless LAN access points and given from a wireless LAN terminal belonging to one of the user groups toward an authentication server that should execute an authentication process in response to the user authentication request, and transmitting an authentication result given from the authentication server in response to the user authentication request to the wireless LAN terminal via one of the plurality of wireless LAN access points.

Wireless network control device and wireless network control system

A semiconductor device includes: a semiconductor element; a circuit substrate having a cavity at a center thereof; a heat radiating member having the semiconductor element bonded at a central portion thereof; and a sealing resin configured to seal the semiconductor element in the cavity. A configuration is provided such that a bonding resin may be disposed in a gap portion which communicates with the cavity between the circuit substrate and the heat radiating member, and by means of a bonding force of the bonding resin, the heat radiating member is permanently fixed to the circuit substrate.

Semiconductor device and manufacturing method therefor

A semiconductor device comprises a semiconductor chip in which a circuit part provided in a center of the semiconductor chip is connected with power-supply lines and power-supply electrodes to supply power from an external power source to the circuit part. A substrate is provided for carrying the semiconductor chip thereon and provided so that first terminals in a region encircling the semiconductor chip are electrically connected to the power-supply electrodes. A first opening is formed on the power-supply line in a center of the circuit part. A second opening is formed on the power-supply line at a peripheral part of the circuit part. A conductor layer is electrically connected to second terminals in the region encircling the semiconductor chip on the substrate, and provided so that the power-supply line in the first opening and the power-supply line in the second opening are connected together.

Semiconductor device

In a semiconductor device, bonding-wires can be applied parallel to each other to electrodes of high-speed signal lines when mounting a highly densified semiconductor element on a low-cost substrate while reducing a length of the bonding-wires. An impedance-matched substrate having wiring that impedance-matched with circuits of a semiconductor element is mounted on a substrate. A plurality of first metal wires connect between first electrodes of the semiconductor element and electrodes of the substrate. A plurality of second metal wires connect between second electrodes of the semiconductor element and first electrodes of the impedance-matched substrate. A plurality of third metal wires connect between second electrodes of the impedance-matched substrate and electrodes of the substrate. The second metal wires extend parallel to each other, and the third metal wires also extend parallel to each other.

A semiconductor module includes a plurality of semiconductor devices each including a circuit substrate carrying thereon a single memory semiconductor chip and a socket for holding the semiconductor devices detachably.

Semiconductor module including a plurality of semiconductor devices detachably

A hybrid exchange which exchanges the STM data to be transmitted periodically to realize an exchange in unit of the ATM data to be transmitted asynchronously includes asynchronous transmission terminal interface as the interface with an STM terminal, an synchronous transmission terminal interface as the interface with an ATM terminal, an ATM exchange interface as the interface with an ATM exchange, a transmitting unit for transmitting the STM time slot and ATM time slot, and a control unit for controlling the interfaces. The synchronous transmission terminal interface assigns the STM data to be transmitted periodically to the STM time slot, while the asynchronous transmission terminal interface assigns the ATM data to be transmitted asynchronously to the ATM time slot. The STM time slot and ATM time slot are identified by the STM/ATM identifier. The STM time slot is stored by multiplexing a plurality of STM data.

Hybrid exchange, an exchange, and a re-arrangement method for STM data in an exchange

Growing community of inventors

Kawasaki, Japan

Yoshihiro Kubota