Sony Corporation

Semiconductor Energy Laboratory Co., Ltd.

Other

Murata Manufacturing Co., Ltd.

Yoshihiro Komatsu

Shunpei Yamazaki

Toshikazu Ohno

Hidekazu Kikuchi

Yasumasa Yamane

Koji Umetsu

Naoki Okuno

Haruyuki Baba

Shinya Sasagawa

Hiroshi Kadoma

Takashi Hamada

Yohei Momma

Naoyuki Sugeno

Yuji Gendai

Hiroki Komagata

Daisuke Yamaguchi

Morihiko Sato

Tomosato Kanagawa

Shinobu Kawaguchi

Shiori Saga

Shuhei Nagatsuka

Tomoaki Moriwaka

Katsuaki Tochibayashi

Kazuya Hanaoka

Ryota Hodo

Daisuke Murakami

Masahiro Segami

Yuichi Takagi

Motoyasu Yano

Kentaro Sugaya

Takashi Hirose

Mitsuru Suzuki

Shota Mizukami

Hideki Tsuya

Masato Kawata

Masataka Kawase

Kenji Hiromoto

Masayuki Katakura

Tsuyoshi Kousaka

Ping Fai Ben Li

Kazuhisa Nojima

Youji Yoshii

Kojiro Takahashi

A semiconductor device having high reliability is provided. The semiconductor device includes a transistor and an insulator placed so as to surround the transistor; the insulator has a barrier property against hydrogen; the transistor includes an oxide and a conductor, the conductor includes nitrogen and a metal; the conductor has a physical property of extracting hydrogen; the conductor includes a region having a hydrogen concentration higher than or equal to 2.0×10atoms/cmand lower than or equal to 1.0×10atoms/cm; and at least part of hydrogen atoms included in the region is bonded to a nitrogen atom.

Semiconductor device and method for manufacturing semiconductor device

A semiconductor device with a small variation in transistor characteristics is provided. The semiconductor device includes an oxide semiconductor, a first conductor and a second conductor over the oxide semiconductor, a first insulator in contact with a top surface of the first conductor, a second insulator in contact with a top surface of the second conductor, a third insulator which is positioned over the first insulator and the second insulator and has an opening overlapping with a region between the first conductor and the second conductor, a fourth insulator positioned over the oxide semiconductor and in the region between the first conductor and the second conductor, and a third conductor over the fourth insulator. Each of the first insulator and the second insulator is a metal oxide including an amorphous structure.

Semiconductor device including metal oxide

A semiconductor device in which variation of characteristics is small is provided. A second insulator, an oxide, a conductive layer, and an insulating layer are formed over a first insulator; a third insulator and fourth insulator are deposited to be in contact with the first insulator; a first opening reaching the oxide is formed in the conductive layer, the insulating layer, the third insulator, and the fourth insulator; a fifth insulator, a sixth insulator, and a conductor are formed in the first opening; a seventh insulator is deposited over the fourth insulator, the fifth insulator, and the sixth insulator; a mask is formed in a first region over the seventh insulator in a top view; oxygen is implanted into a second region not overlapping the first region in the top view; heat treatment is performed; a second opening reaching the fourth insulator is formed in the seventh insulator; and heat treatment is performed.

Semiconductor device and manufacturing method thereof

To provide a semiconductor device with less variations in characteristics. The semiconductor device includes a first circuit region and a second circuit region over a substrate, where the first circuit region includes a plurality of first transistors and a first insulator over the plurality of first transistors; the second circuit region includes a plurality of second transistors and a second insulator over the plurality of second transistors; the second insulator includes an opening portion; the first transistors and the second transistors each include an oxide semiconductor; a third insulator is positioned over and in contact with the first insulator and the second insulator; the first insulator, the second insulator, and the third insulator inhibit oxygen diffusion; and the density of the plurality of first transistors arranged in the first circuit region is higher than the density of the plurality of second transistors arranged in the second circuit region.

Semiconductor device

A positive electrode active material in which a capacity decrease caused by charge and discharge cycles is suppressed is provided. Alternatively, a positive electrode active material having a crystal structure that is unlikely to be broken by repeated charging and discharging is provided. The positive electrode active material contains titanium, nickel, aluminum, magnesium, and fluorine, and includes a region where titanium is unevenly distributed, a region where nickel is unevenly distributed, and a region where magnesium is unevenly distributed in a projection on its surface. Aluminum is preferably unevenly distributed in a surface portion, not in the projection, of the positive electrode active material.

Positive electrode active material, secondary battery, and electronic device

A semiconductor device having a large on-state current and high reliability is provided. The semiconductor device includes a first insulator, a first oxide over the first insulator, a second oxide over the first oxide, a third oxide and a fourth oxide over the second oxide, a first conductor over the third oxide, a second conductor over the fourth oxide, a fifth oxide over the second oxide, a second insulator over the fifth oxide, and a third conductor over the second insulator. The fifth oxide is in contact with a top surface of the second oxide, a side surface of the first conductor, a side surface of the second conductor, a side surface of the third oxide, and a side surface of the fourth oxide. The second oxide contains In, an element M, and Zn. The first oxide and the fifth oxide each contain at least one of constituent elements included in the second oxide. The third oxide and the fourth oxide each contain the element M. The third oxide and the fourth oxide include a region where the concentration of the element M is higher than that in the second oxide.

A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes an oxide semiconductor, a first insulator in contact with the oxide semiconductor, and a second insulator in contact with the first insulator. The first insulator includes excess oxygen. The second insulator has a function of trapping or fixing hydrogen. Hydrogen in the oxide semiconductor is bonded to the excess oxygen. The hydrogen bonded to the excess oxygen passes through the first insulator and is trapped or fixed in the second insulator. The excess oxygen bonded to the hydrogen remains in the first insulator as the excess oxygen.

Semiconductor device and memory device

A semiconductor device having high reliability is provided. The semiconductor device includes a transistor and an insulator placed so as to surround the transistor; the insulator has a barrier property against hydrogen; the transistor includes an oxide and a conductor; the conductor includes nitrogen and a metal; the conductor has a physical property of extracting hydrogen; the conductor includes a region having a hydrogen concentration higher than or equal to 2.0×10atoms/cmand lower than or equal to 1.0×10atoms/cm; and at least part of hydrogen atoms included in the region is bonded to a nitrogen atom.

A battery system includes a plurality of electronic storage modules serially connected together wherein the electronic storage modules include a battery block group including a plurality of battery cells, and a different magnetic core connected to each battery block group.

Electric storage apparatus, electronic device, electric vehicle, and electric power system

A power storage apparatus, electric device, electric vehicle, and power system are disclosed. In an example embodiment, a power storage apparatus includes a battery block comprising a plurality of battery cells and an isolating unit that enables wireless information transfer regarding battery information of the battery block.

Power storage apparatus and electric vehicle

A battery system includes a plurality of electronic storage modules serially connected together. Each electronic storage module includes a battery block group including a plurality of battery cells, and a different magnetic core connected to each battery block group. An electronic device, an electric vehicle and electric power system including the battery system are also provided.

Electric storage apparatus, electronic device, electric vehicle, and electric power system including a magnetic core

Growing community of inventors

Kanagawa, Japan

Yoshihiro Komatsu