Tokyo Electron Limited

Yoshihiro Kawaguchi

Hirotoshi Mori

Hayato Tanoue

Kazuya Hisano

Seiji Nakano

Yohei Yamawaki

Satoshi Kaneko

Munehisa Kodama

A separating apparatus configured to separate a processing target object into a first separation body and a second separation body includes a first holder configured to hold the first separation body; a second holder configured to hold the second separation body; a moving unit configured to move the first holder and the second holder relatively to each other; and a separation surface cleaning unit configured to clean at least a separation surface of the first separation body or a separation surface of the second separation body.

Separating apparatus and separating method

A substrate processing apparatus configured to process a substrate includes a substrate holder configured to hold, in a combined substrate in which a front surface of a first substrate and a front surface of a second substrate are bonded to each other, the second substrate; a periphery modification unit configured to form a peripheral modification layer by radiating laser light for periphery to an inside of the first substrate held by the substrate holder along a boundary between a peripheral portion of the first substrate as a removing target and a central portion thereof; and an internal modification unit configured to form, after the peripheral modification layer is formed by the periphery modification unit, an internal modification layer by radiating laser light for internal surface to the inside of the first substrate held by the substrate holder along a plane direction of the first substrate.

Substrate processing apparatus and substrate processing method

A substrate processing system includes a pre-alignment apparatus having a pre-alignment stage configured to hold a processing target substrate and a detector configured to detect a center position and a crystal orientation of the processing target substrate held by the pre-alignment stage; and a laser processing apparatus having a laser processing stage configured to hold the processing target substrate and a laser processing head configured to radiate and concentrate a laser beam for processing the processing target substrate to the processing target substrate held by the laser processing stage. The pre-alignment apparatus is disposed above the laser processing apparatus.

Substrate processing system and substrate processing method

A laser processing device includes a height measurement unit configured to measure a vertical direction position of an irradiation point of a processing laser beam on an upper surface of a substrate; and a controller configured to control a vertical direction position of a light condensing unit based on the vertical direction position of the irradiation point while moving the irradiation point along multiple dividing target lines. The height measurement unit includes a coaxial laser displacement meter and a separate-axis laser displacement meter. The controller controls the vertical direction position of the light condensing unit by using only one of the coaxial or the separate-axis laser displacement meter for each of the multiple dividing target lines while the substrate is processed and performs a switchover of a laser displacement meter for controlling the vertical direction position of the light condensing unit between the coaxial and the separate-axis laser displacement meters.

Laser processing device, laser processing system and laser processing method

A substrate processing apparatus configured to process a substrate includes a substrate holder configured to hold, in a combined substrate in which a first substrate and a second substrate are bonded to each other, the second substrate; a periphery removing unit configured to remove, starting from a periphery modification layer formed on the first substrate along a boundary between a peripheral portion to be removed and a central portion of the first substrate, the peripheral portion from the combined substrate held by the substrate holder; and a collection unit equipped with a collection mechanism configured to collect the peripheral portion removed by the periphery removing unit.

A substrate processing apparatus includes a holder configured to hold a combined substrate in which a first substrate and a second substrate are bonded to each other; a first detector configured to detect an outer end portion of the first substrate; a second detector configured to detect a boundary between a bonding region where the first substrate and the second substrate are bonded and a non-bonding region located at an outside of the bonding region; a periphery removing device configured to remove a peripheral portion of the first substrate as a removing target from the combined substrate held by the holder.

A substrate processing apparatus includes one or more substrate processing unitstoeach processing a substratewith a processing fluid; processing fluid supply unitsandsupplying the heated processing fluid to the substrate processing unitstoand a controllercontrolling the processing fluid supply unitsand. The processing fluid supply unitsandinclude a storage tankstoring the processing fluid; a heating heat exchangerheating the processing fluid; and a supply pathsupplying the processing fluid to the substrate processing unitsto. The supply pathincludes a bypass pathbypassing the heating heat exchangerat an upstream of the substrate processing unitsto. The processing fluid heated by the heating heat exchangerand the processing fluid supplied from the bypass pathare mixed to be supplied.

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Koshi, Japan

Yoshihiro Kawaguchi