Murata Manufacturing Co., Ltd.

Tti Ellebeau, Inc.

Institute of General Beauty & Medical Science

Yoshihiro Ito

Kazutaka Nakamura

Michio Kadota

Koji Fujimoto

Kiyoshi Kanamura

Akihiko Matsumura

Kazushi Miyake

Yuri Hoshino

Yoriko Kobayashi

Sakae Torisawa

In multiple magnetic sensors, for a correlation function between a magnetic field applied from a magnet and a value of the magnetic field detected by the magnetic sensor at a first temperature, the value detected by the magnetic sensor when the magnetic field applied from the magnet is 0 is set to be a first offset value. For a correlation function between a magnetic field applied from the magnet and a value of the magnetic field detected by the magnetic sensor at a second temperature, the value detected by the magnetic sensor when the magnetic field applied from the magnet is 0 is set to be a second offset value. The second temperature is higher than the first temperature. A values of applied magnetic fields detected by first and second magnetic sensors are opposite in polarity.

Displacement detector device

A sensor tag () includes an antenna () and connection conductors () formed on a surface of a flexible substrate (). A sensing element () is mounted on land conductors () of the connection conductors (). The sensing element () is composed of a crystal vibrator () and an RFIC (). The crystal vibrator () receives an excitation signal from the outside and generates a resonance signal of a resonant frequency corresponding to the sensed temperature. Equivalent circuit constant information including at least an equivalent inductance (Lxs) or an equivalent capacitance (Cxs) of the crystal vibrator () are stored in the RFIC ().

Sensor tag and manufacturing method for sensor tag

A sensor tag () includes a crystal vibrator () and an antenna (). The antenna () is composed of a radiating conductor () and connection conductors (). A crystal vibrator () is mounted on land conductors () provided at an end portion of the connection conductors () on the opposite side to the antenna (). The antenna () is formed in a shape such that an amount of shift (&#x394;F) of a radiation frequency of the sensor tag () falls within an acceptable range in accordance with a resonant frequency (Fxs) and an equivalent inductance (Lxs) of the crystal vibrator () and a self-resonant frequency (Fant) and an equivalent inductance (Lant) of the antenna ().

A wireless thermometer is provided, which measures a deep temperature with high accuracy and has an improved communication distance. A wireless thermometer includes a flat film-like substrate. A quartz crystal vibrator and an antenna are disposed on a principal surface of the substrate. A quartz crystal vibrator and an antenna are disposed on the other principal surface of the substrate. A winding conductor of the antenna is substantially symmetrical with a winding conductor of the antenna with respect to the substrate. A lead conductor of the antenna is connected to the winding conductor at one end and is connected to the quartz crystal vibrator at the other end. A central portion of the lead conductor is bent. By folding the central portion, the quartz crystal vibrator can be positioned opposite the quartz crystal vibrator with a heat insulator interposed there between.

Wireless thermometer on a film-like substrate using quartz vibrator

A diode type ultraviolet sensor having a layered-structure body including a conductive layer composed of a sintered ceramic body having conductivity and a semiconductor layer composed of an oxide semiconductor including ZnO. The semiconductor layer is disposed on a principal surface of the conductive layer and forms a heterojunction with the conductive layer. The ultraviolet sensor is used in such a condition that the semiconductor layer is positioned at a light-receiving side irradiated by ultraviolet rays. The semiconductor layer is preferably composed of a sintered body. The sintered body serving as the conductive layer and sintered body serving as the semiconductor layer are preferably formed by co-firing. Terminal electrodes are provided on a principal surface and the other principal surface of the layered-structure body, respectively.

Ultraviolet sensor

The ultraviolet sensor has a ZnO layer composed of an oxide semiconductor including ZnO; a (Ni,Zn)O layer which is provided in contact with the ZnO layer and which is composed of an oxide semiconductor including NiO and ZnO solid-solved therein; a first terminal electrode electrically connected to the ZnO layer, and a second terminal electrode electrically connected to the (Ni,Zn)O layer. The ZnO layer is disposed at an ultraviolet ray receiving side. The (Ni,Zn)O layer is preferably formed of a sintered body.

A semiconductor device having excellent crystallinity and excellent electric characteristics includes a ZnO thin film having excellent surface smoothness. ZnO-based thin films (an n-type contact layer, an n-type clad layer, an active layer, a p-type clad layer, and a p-type contact layer) primarily including ZnO are formed sequentially by an ECR sputtering method or other suitable method on a zinc-polar surface of a ZnO substrate. A transparent electrode and a p-side electrode are formed by an evaporation method or other suitable method on a surface of the p-type contact layer, and an n-side electrode is formed on an oxygen-polar surface of the ZnO substrate.

Semiconductor device in which zinc oxide is used as a semiconductor material and method for manufacturing the semiconductor device

An iontophoresis device useful for administering an ionic drug by iontophoresis has an iontophoresis electrode section (active electrode section) and a ground electrode section (inactive electrode section) both of which are to be connected to a power source. The iontophoresis device includes elements (members) of both of the electrode sections are all formed of membrane bodies, and includes ion exchange membranes different in ion selectivity, one being selective to ions of the same species as charged ions of the ionic drug and the other to ions different in species from the charged ions of the ionic drug that are arranged in the iontophoresis electrode section, and at least an ion exchange membrane selective to ions opposite to the charged ions of the ionic drug is arranged in the ground electrode section. The iontophoresis device can administer the ionic drug stably over a long period of time at high transport efficiency.

Iontophoresis device

A Shear Horizontal-type end-surface-reflection-type surface acoustic wave device includes a piezoelectric substrate having end surfaces. The most appropriate positions of the end surfaces of the piezoelectric substrate are determined. Interdigital transducers are disposed on the main surface of the piezoelectric substrate having a comparatively low relative dielectric constant &#x2208;(for example, a relative dielectric constant of about 40 or less). The positions of the end surfaces are determined so that the distance from the center of the second electrode finger, counting from the outermost side in the surface acoustic wave propagation direction among the interdigital transducers, to the end surfaces (end surfaces for reflecting the surface acoustic wave) of the piezoelectric substrate satisfy the relationship (N+&#x215d;)&#x3bb;s&#x2266;L&#x2266;(N+&#x215e;)&#x3bb;s, where &#x3bb;s is the wavelength of the surface acoustic wave, and N is 0 or a positive integer.

Surface acoustic wave device and communication device

The present method is a method for reducing an oxidized skin tissue comprising the steps of bringing a source of negative high-voltage pulses of which duty ratio is controllable into the proximity of the oxidized skin tissue and applying negative high-voltage pulses to the oxidized skin tissue so that the oxidized skin tissue is reduced by an electron addition reaction. A high-voltage generating circuit which is incorporated in a main body generates negative high-voltage pulses. Those negative high-voltage pulses are applied to the skin through a contact element which is connected to the main body, so that the oxidized skin tissue is reduced by the electron addition reaction. Further, the present apparatus is an apparatus to reduce a skin tissue, comprising a high-voltage pulse generating means to generate negative high-voltage pulses, and a contact element which is connected to the high-voltage pulse generating means and applies negative high-voltage pulses generated by the high-voltage pulse generating means to the skin when it is brought close to or in contact with a surface of the skin, whereby an oxidized skin tissue is reduced by the electron addition reaction.

Growing community of inventors

Kyoto, Japan

Yoshihiro Ito