Hamamatsu-photonics K.k.

Sanken Electric Co., Ltd.

Yoshihiro Ishigami

Yasumasa Hamana

Kimitsugu Nakamura

Tetsuji Matsuo

Takaaki Nagata

Tokuaki Nihashi

Shunro Fuke

Daijiro Oguri

Toshikazu Matsui

A transmissive photocathode includes a light transmitting substrate that has a first surface on which light is incident and a second surface which emits light incident from a side of the first surface, a photoelectric conversion layer that is provided on the second surface side of the light transmitting substrate and converts the light emitted from the second surface into photoelectrons, a light transmitting conductive layer that is provided between the light transmitting substrate and the photoelectric conversion layer and is composed of a single-layered graphene, and a thermal stress alleviation layer that is provided between the photoelectric conversion layer and the light transmitting conductive layer and has light transmissivity. A thermal expansion coefficient of the thermal stress alleviation layer is smaller than a thermal expansion coefficient of the photoelectric conversion layer and larger than a thermal expansion coefficient of the graphene.

Transmissive photocathode and electron tube

A semiconductor photocathode includes an AlGaN layer (0&#x2266;X&#x3c;1) bonded to a glass substrate via an SiOlayer and an alkali-metal-containing layer formed on the AlGaN layer. The AlGaN layer includes a first region, a second region, an intermediate region between the first and second regions. The second region has a semiconductor superlattice structure formed by laminating a barrier layer and a well layer alternately, the intermediate region has a semiconductor superlattice structure formed by laminating a barrier layer and a well layer alternately. When a pair of adjacent barrier and well layers is defined as a unit section, an average value of a composition ratio X of Al in a unit section decreases monotonously with distance from an interface position between the second region and the SiOlayer at least in the intermediate region.

Semiconductor photocathode and method for manufacturing the same

The present invention aims at providing a photocathode which can improve various characteristics. In a photocathode, an intermediate layer, an underlayer, and a photoelectron emission layerare formed in this order on a substrate. The photoelectron emission layercontains Sb and Bi and functions to emit a photoelectron in response to light incident thereon. The photoelectron emission layercontains 32 mol % or less of Bi relative to SbBi. This can dramatically improve the linearity at low temperatures.

Photocathode

Growing community of inventors

Hamamatsu, Japan

Yoshihiro Ishigami