Mitsubishi Denki Kabushiki Kaisha

Mitsubishi Electric Corporation

Yoshihiro Hisa

Tsutomu Yamaguchi

Hideyuki Tanaka

Masaharu Nakaji

Yasuaki Yoshida

Go Sakaino

Takehiro Nishida

Hideki Haneda

Norimasa Kumada

Kenji Hiramatsu

Kazunori Matsuo

Yuji Masuyama

A semiconductor photodetector device includes a header, a high frequency amplifier, and a submount having a top surface. The high frequency amplifier is located on the header and has a top surface with a high frequency grounding pad disposed on the top surface of the amplifier. First and second electrode pads are located on the top surface of the submount. A semiconductor photodetector having a footprint smaller than the first electrode pad is bonded to the first electrode pad. The high frequency grounding pad is connected to the second electrode pad by a wire.

Semiconductor photodetector device

Semiconductor laser elements are formed on a common substrate. Au plating is formed on principal surfaces of the semiconductor laser elements. The semiconductor laser elements are mounted on a package with solder applied to the Au plating. Areas opposed to each other across a light-emitting area of each semiconductor laser element are designated first and second areas. Average thickness of the Au plating is different in the first and second areas of each semiconductor laser element.

Method of manufacturing semiconductor light-emitting device

Semiconductor light-emitting device

An electrode pattern for wire-bonding includes: a wire-bonding reference pattern indicating a reference position for determination of a wire-bonding position; and a wire-bonding recognition pattern. The distance between the reference position and a wire-bonding metal portion bonded to the electrode pattern and the distance between the wire-bonding recognition pattern and the wire-bonding metal portion satisfy predetermined relationships.

Electrode pattern and wire bonding method

A semiconductor optical device which has a ridge structure includes a waveguide area between paired mesa trenches; first and second mount areas disposed outside the mesa trenches; a first spacer layer disposed in a first mount area and a second spacer layer disposed in a second mount area; a first metal layer electrically connected to an upper cladding layer in the waveguide area and extending from the waveguide area over the first mount area; and a second metal layer disposed over the second mount area. Thicknesses from a back surface of the semiconductor optical device to the first metal layer in the first mount area and to the second metal layer in the second mount area are both larger than thickness from the back surface to the first metal layer in the waveguide area.

Semiconductor optical device

A semiconductor laser has a semiconductor substrate, an active layer disposed indirectly on the semiconductor substrate, a barrier layer disposed on the active layer having a larger band gap energy than the active layer, and an embedded diffraction grating of stripes of a semiconductor material, the stripes having a width in a resonator length direction, a length perpendicular to the resonator length direction, and a thickness, and are embedded in the barrier layer. The stripes have a constant pitch along the resonator length direction of the waveguide path, a constant thickness, and a width that changes in the resonator length direction or the width is constant and the thickness is changed.

Semiconductor laser including embedded diffraction grating

In a method of producing a .lambda./4-shifted diffraction grating, an image reversible resist is deposited on a substrate, the image reversible resist is exposed to an interference pattern having an intensity so that the resist is not dissolved when developed, the resist on a first region of the substrate is exposed to an interference light pattern so that only portions of the resist exposed to crests of a light intensity pattern in the interference exposure process are dissolved when developed, the resist on the first region is developed, portions of the resist on the first region remaining after the developing are exposed so that image reversal occurs in these portions when subjected to image reversal baking, the resist on a second region of the substrate is exposed to an interference light pattern so that only portions of the resist exposed opposite crests of a light intensity pattern are image reversed when subjected to image reversal baking, the resist on the first and second regions is subjected to image reversal baking, and the resist on the first and second regions is exposed and developed to remove portions in which image reversal did not occur, thereby forming a mask for a .lambda./4-shifted diffraction grating to be formed in the substrate.

Method of producing lambda/4-shifted diffraction grating

An infrared imaging device includes a first conductivity type first semiconductor layer having a small energy band gap, a first conductivity type second semiconductor layer have a larger energy band gap and disposed on the first semiconductor layer, a light receiving region of the second conductivity type in the second semiconductor layer and extending into the first semiconductor layer, a second conductivity type region in the second semiconductor layer spaced from the light receiving region, an insulating layer on the second semiconductor layer, and an MIS electrode on the insulating layer between the light receiving region and the second conductivity type region. Recombination of signal charges produced by incident light in the light receiving region and leakage current at the surface of the second semiconductor layer at the light receiving region are reduced. In addition, the numerical aperture of the light receiving region is increased. As a result, a highly reliable monolithic infrared imaging device in which photosensitivity and signal process efficiency are significantly improved is realized.

Infrared imaging device

A CEL material (11) is formed such that a first region (11a) thereof which is formed on a concave portion of a semiconductor substrate (1) is sufficiently thicker than a second region (11b) thereof which is formed on the other region. Light (4) is directed from above to the CEL material (11) for a predetermined period of time to render only the thin second region pervious to light to thereby expose part of a photoresist (2) which is under the second region (11b) by the illumination. Subsequently, the semiconductor substrate (1) is immersed in an appropriate solvent to remove only part of the photoresist (2) which is under the first region (11a). The part of the photoresist (2) which is under the second region 11b remains unremoved. The photoresist (2) can be patterned with the shape of the concave portion of the semiconductor substrate (1) accurately reflected therein.

Method of patterning organic macromolecular film

A solid-state imaging device includes a photodiode array having a plurality of pixels, each pixel including a second conductivity type region formed in a first conductivity type semiconductor layer, an electrode common to all the pixels and disposed on the first conductivity type semiconductor layer, a signal transfer part for transferring signal charges generated in the pixels and a DC voltage source for applying a DC voltage in a forward direction to the pixels. The reverse bias voltage applied to a photodiode due to the voltage applied by the signal input stage of the signal transfer part is canceled by the forward DC voltage applied to the common electrode. As a result, the operating points of the pixels are uniform when nearly zero bias voltage is applied to the pixels.

Solid-state hybrid infrared imaging device

A method for producing a photodetector device includes depositing a plurality of spaced apart light absorption regions at intervals on a substrate, depositing an insulating layer on the substrate and covering the light absorption regions, producing a first conductivity type semiconductor layer on the insulating layer, and producing second conductivity type semiconductor regions by selectively diffusing impurities into regions of the first conductivity type semiconductor layer until the impurities reach the insulating layer.

Method of making a rear surface incident type photodetector

A photodetector device of a rear surface incident type includes a semi-insulating substrate transparent to light incident from the rear surface, a plurality of second conductivity type semiconductor regions disposed on the substrate in a first conductivity type semiconductor layer, a conductive light absorption layer disposed on at least one of the second conductivity type semiconductor regions, metal electrodes having a high reflectance of the incident light disposed on the light absorption layer and the second conductivity type semiconductor regions, and protection layers disposed on the first conductivity type semiconductor layer.

Photodetector device

A rear surface incident type photodetector device includes spaced apart light absorption regions on a semi-insulating substrate, a semi-insulating layer covering the light absorption regions on the semi-insulating substrate, a first conductivity type semiconductor region disposed on the semi-insulating layer opposite each light absorption regon, and second conductivity type semiconductor regions separating the first conductivity type regions and reaching the semi-insulating layer. A rear surface incident type photodetector device includes spaced apart insulating light absorption regions on a surface of a semi-insulating substrate, first conductivity type semiconductor regions covering the insulating light absorption, regions, and second conductivity type semiconductor regions separating the first conductivity type semiconductor regions and reaching the semi-insulating substrate.

An infrared light detecting element which may be employed in a two-dimensional light detecting array includes a light responsive photodiode that generates electrical charges in response to incident light. The electrical charges are conveyed to a charge storage means and subsequently transferred to a charge coupled device. The charges are stored in potential wells produced opposite electrodes in a laminated structure including a semiconductor substrate on which one charge storage electrode is disposed and a first semiconductor layer disposed on the substrate on which a second charge storage electrode is disposed. The charge storage electrodes are interconnected in series or in parallel. Additional semiconductor layers and charge storage electrodes may be employed. The laminated structure produces a significant increase in the charge storage capacity of the device without increasing its area. The dynamic range of the charge storage capacity and signal-to-noise ratio of the element and the array are significantly improved over the prior art.

Light detecting element and light detecting array

A semiconductor light receiving device comprising: a light receiving section obtained by arranging a plurality of light receiving elements having pn junctions in an array on a semiconductor substrate; a signal taking out section for taking out an electric signal obtained at the light receiving section; and a member for applying a magnetic field having a component in a direction vertical with the surface of the semiconductor substrate to the light receiving section.

Growing community of inventors

Itami, Japan

Yoshihiro Hisa