Sharp Kabushiki Kaisha Corporation

Yoshihiro Endo

Hiroshi Kishishita

Hisashi Uede

Masashi Kawaguchi

Etsuo Mizukami

Kinichi Isaka

Takuo Yamashita

Ikuo Ogawa

Yoshito Yamashita

Takaaki Horita

A thin-film EL element is manufactured by forming a silicon nitride or silicon oxynitride film for a first dielectric layer by sputtering and a silicon nitride or silicon oxynitride film for a second dielectric layer by plasma chemical vapor deposition so that the element's resistance against moisture and mass productivity can be improved.

Method of manufacturing a thin-film electroluminescent display element

A glass substrate for supporting an electroluminescent (EL) display element comprising two dielectric layers defining a thin film EL layer, and two electrode layers, attached to each of the two dielectric layers is characterized by being composed of barosilicic acid without hydrolytic products thereon. A method for preparing such a glass substrate comprises the steps of preparing a glass substrate composed of borosilic acid, grinding a surface of the glass substrate, and cleaning the surface of the glass substrate without soaking it in an acidic solution, so that the glass substrate is free from formed hydrolytic products on the surface.

Substrate for thin film electroluminescent display panel

According to a method of this invention for manufacturing a thin-film electroluminescent display panel of the type having a pair of electrodes sandwiching a three-layer structure composed of a layer covered with dielectric layers on both sides, a silicon nitride or silicon oxynitride film is formed on a layer comprising ZnS by a plasma chemical vapor deposition method with a mixture of silicon and nitrogen gases or of silicon, nitrogen and N.sub.2 O gases. Alternatively, this film may be formed in a double-layer structure, the second layer being formed with a mixture of silicon and ammonia gases or of silicon, ammonia and N.sub.2 O gases. A dielectric layer thus formed by a method embodying this invention can satisfactorily cover the protrusions and impurities in the layer underneath and thin-film electroluminescent elements manufactured by this method have superior brightness characteristics.

Method of manufacturing thin-film electroluminescent display panel

A thin-film electroluminescent (EL) display panel comprises a thin-film EL layer, first and second dielectric layers, the thin-film EL layer being disposed between the dielectric layers, first and second metal oxide layers, and first and second electrodes, the first and second metal oxide layers being disposed respectively between the first and second dielectric layers, and the first and second electrodes. Preferably, at least one of the first and second metal oxide layers is made of Al.sub.2 O.sub.3, SiO.sub.2 or the like with a thickness of about 100-800.ANG. and at least one of the dielectric layers being about 1000-3000.ANG..

Method for preparing a thin-film electroluminescent display panel

A thin-film electroluminescent (EL) element comprises a thin-film electroluminescent layer, first and second dielectric layers for supporting the element layer, the first dielectric layer being disposed on a smooth surface and the second dielectric layer being disposed on an uneven surface, the thickness of the first dielectric layer being thicker than that of the second dielectric layer such that the dielectric properties of the element are assured, and first and second electrodes provided on the dielectric layers, respectively.

Layer structure of thin-film electroluminescent display panel

A thin electroluminescent (EL) display panel comprises an EL thin film unit for generating an EL light, a pair of glass substrates for sealing the EL thin film unit, a protective liquid within the cavity defined by the glass substrate for protecting the EL thin film unit, a pair of electrodes for conducting electric energy to the EL thin film unit, and a terminal connected to at least one of the pair of electrodes, the terminal comprising a metal such as Al, Al-Ni, Ag-Mn, etc., and the terminal being coupled to a power source.

Structure of thin electroluminescent display panel sealed by glass

A method for fabricating an indium tin oxide (ITO) film comprises depositing the ITO film on a heat-resisting substrate by sputtering using a metal alloy target of In-Sn in an atmosphere including an active gas, and heat-treating the ITO film at about 550-650 degrees Centigrade in an oxygen-free atmosphere. Preferably, the heat-resisting substrate comprises an aluminoborosilicate glass. Further, sputtering, preferably reactive sputtering, is employed.

Method for fabricating an indium tin oxide film for a transparent

At least one silicon-oxynitride film is deposited on an electroluminescence layer for providing a uniform and stable dielectric layer for an electroluminescence display panel. The silicon-oxynitride film is deposited using a sputtering technique by mixing a small amount (1 mol%) of nitrous oxide (N.sub.2 O) gas into a sputtering gas such as nitrogen (N.sub.2) gas. Oxygen (O.sub.2) gas may be substituted for the N.sub.2 O gas mingled within the sputtering gas in the amount of five mol%. A target for sputtering is a pure silicon or sintered Si.sub.3 N.sub.4 plate. An R.F. discharge is provided so that the power flux density on the target becomes several to several ten W. The silicon-oxynitride film is derived by means of the reaction between ion sputtering and the sputtering gas. A dielectric layer is further provided for establishing high reliabiltiy high dielectric properties of the electroluminescence display panel, the dielectric layer being disposed together with the silicon-oxynitride film and being one of the group consisting of Al.sub.2 O.sub.3, SiO.sub.2, Ta.sub.2 O.sub.5, Si.sub.3 N.sub.4 and Y.sub.2 O.sub.3. The silicon-oxynitride flm which is injected by suitable ions such as P.sup.+, H.sup.+, He.sup.+, Ne.sup.+, or Ar.sup.+ may be further provided as the dielectric layer.

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Nara, Japan

Yoshihiro Endo