Murata Manufacturing Co., Ltd.

Yoshihiro Daimon

Takanori Uejima

Kenji Tahara

Hiromichi Kitajima

Satoshi Goto

Naoya Matsumoto

Takashi Yamada

Kiyoshi Aikawa

Daerok Oh

Hidetaka Takahashi

Masakazu Hirobe

Yoshiki Yasutomo

Nanami Yumura

Yuuto Aoki

A radio-frequency module includes: plural electronic components that include plural bare SAW devices and that are disposed between a major surface of a module substrate and a major surface of a module substrate, on a major surface of the module substrate, and on a major surface of the module substrate; plural external connection terminals disposed on the major surface; and resin members. The resin member covers the plural SAW devices but does not fill between central regions of the plural bare SAW devices in which the IDT electrodes are disposed and the major surface to which plural bump electrodes are joined. The plural bare SAW devices are disposed on the major surface, and no bare SAW devices are disposed between the major surfaces and on the major surface.

Radio-frequency module and communication device

A higher-speed operation of a power amplifier circuit is achieved. A power amplifier circuit includes multi-stage amplifier units, an ET terminal, and an APT terminal. The multi-stage amplifier units include a final-stage amplifier unit. The final-stage amplifier unit includes a first amplifier element and a second amplifier element that are connected in parallel with each other. The first amplifier element is connected to the ET terminal. The second amplifier element is connected to the APT terminal.

Power amplifier circuit, radio-frequency circuit, and communication device

A radio frequency module includes a transmit filter that allows a transmit signal of a band A for FDD to pass through, a receive filter that allows a receive signal of the band A to pass through, a filter that allows a transmit/receive signal of a band B for TDD to pass through, power amplifiers, a low noise amplifier, a switch between connecting the receive filter to the low noise amplifier and connecting the filter to the low noise amplifier, a switch between connecting the filter to the power amplifier and connecting the filter to the low noise amplifier, a matching circuit connected between the power amplifier and the transmit filter, a matching circuit connected between the power amplifier and the switch, and a module board. On the module board, each of the power amplifiers and the switch is arranged in between the matching circuit and the matching circuit.

Radio frequency module and communication device

A first power amplifier amplifies first transmission signals in a first frequency band and outputs the resultant signals. A first matching circuit includes a plurality of first inductor portions and is connected to an output pad electrode of the first power amplifier. A second power amplifier amplifies second transmission signals in a second frequency band higher than the first frequency band and outputs the resultant signals. A second matching circuit includes at least one second inductor portion and is connected to an output side of the second power amplifier. A multilayer substrate has a first main surface and a second main surface located opposite to each other and is provided with the first and second power amplifiers and the first and second matching circuits. The first inductor portion closer than the other first inductor portions to the output pad electrode includes an inner-layer inductor portion located in the multilayer substrate.

A radio frequency module includes: a module board that includes a first principal surface and a second principal surface on opposite sides of the module board; a power amplifier; a first circuit component; and a power amplifier (PA) control circuit configured to control the power amplifier. The power amplifier includes: an input terminal; an output terminal; first and second amplifying elements disposed parallel to the input terminal; and an output transformer connected between the output terminal and output terminals of the first and second amplifying elements. The PA control circuit is disposed on the second principal surface, and the first and second amplifying elements are both disposed on the first principal surface.

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Kyoto, Japan

Yoshihiro Daimon