Sony Semiconductor Solutions Corporation

Sony Corporation

Sony Group Corporation

Yoshihiro Ando

Hideaki Togashi

Fumihiko Koga

Tetsuji Yamaguchi

Shintarou Hirata

Taiichiro Watanabe

Yukio Kaneda

Toyotaka Kataoka

Shinpei Fukuoka

Satoshi Keino

Akira Furukawa

Masashi Nakata

Nobuhiro Kawai

Sho Nishida

Yusuke Murakawa

Hiroki Iwashita

Yoshito Nagashima

Mikio Ishimaru

Yasumasa Akutagawa

Taku Minoda

Takahito Niwa

Provided is an imaging element including a photoelectric conversion unit formed by stacking a first electrode, a photoelectric conversion layer and a second electrode. The photoelectric conversion unit further includes a charge storage electrode which is disposed to be spaced apart from the first electrode and disposed opposite to the photoelectric conversion layer via an insulating layer. The photoelectric conversion unit is formed of N number of photoelectric conversion unit segments, and the same applies to the photoelectric conversion layer, the insulating layer and the charge storage electrode. An nphotoelectric conversion unit segment is formed of an ncharge storage electrode segment, an ninsulating layer segment and an nphotoelectric conversion layer segment. As n increases, the nphotoelectric conversion unit segment is located farther from the first electrode. A thickness of the insulating layer segment gradually changes from a first to Nphotoelectric conversion unit segment.

Imaging element, stacked-type imaging element and solid-state imaging apparatus

Provided is a solid-state imaging device including a substrate having a pixel array unit sectioned into a matrix, a plurality of normal pixels, a plurality of phase difference detection pixels, and a plurality of adjacent pixels adjacent to the phase difference detection pixels, each provided in each of the plurality of sections. Further, each of the normal pixel, the phase difference detection pixel, and the adjacent pixel has a photoelectric conversion film, and an upper electrode and a lower electrode that sandwich the photoelectric conversion film in a thickness direction of the photoelectric conversion film. Furthermore, the lower electrode, in the adjacent pixel, extends from the section in which the adjacent pixel is provided to cover the section in which the phase difference detection pixel adjacent to the adjacent pixel is provided, when viewed from above the substrate.

Solid-state imaging device and electronic apparatus for miniaturization of pixels and improving light detection sensitivity

An imaging device is provided. The imaging device may include a substrate having a first photoelectric conversion unit and a second photoelectric conversion unit at a light-incident side of the substrate. The second photoelectric conversion unit may include a photoelectric conversion layer, a first electrode, a second electrode above the photoelectric conversion layer, a third electrode, and an insulating material between the third electrode and the photoelectric conversion layer, wherein a portion of the insulating material is between the first electrode and the third electrode.

Imaging device having charge storage electrode, first electrode, second electrode and transfer control electrode, driving method for imaging device having the same, and electronic apparatus

An error is reduced in phase difference detection of an imaging element including a phase difference pixel with an on-chip lens in common for a pair of pixels. The imaging element includes a pixel, an individual on-chip lens, a plurality of phase difference pixels, a common on-chip lens, and a pixel circuit. The individual on-chip lens individually collects incident light for each pixel. The phase difference pixels are arranged adjacent to each other to detect a phase difference. The common on-chip lens is arranged in common for the plurality of phase difference pixels and collects incident light in common. The pixel circuit is formed in a semiconductor substrate and generates an image signal on the basis of a transferred charge. Charge transfer units of the plurality of phase difference pixels are in a region between the common on-chip lens and the individual on-chip lens.

Imaging element and imaging apparatus

There is provided a solid-state imaging device that includes a substrate having a pixel array unit sectioned into a matrix, a plurality of normal pixels, a plurality of phase difference detection pixels, and a plurality of adjacent pixels adjacent to the phase difference detection pixels, each provided in each of the plurality of sections, in which each of the normal pixel, the phase difference detection pixel, and the adjacent pixel has a photoelectric conversion film, and an upper electrode and a lower electrode that sandwich the photoelectric conversion film in a thickness direction of the photoelectric conversion film, and the lower electrode, in the adjacent pixel, extends from the section in which the adjacent pixel is provided to cover the section in which the phase difference detection pixel adjacent to the adjacent pixel is provided, when viewed from above the substrate.

Solid-state imaging device and electronic apparatus with a charge storage unit electrically connected to each of a lower electrode of a phase difference detection pixel, an adjacent pixel and a normal pixel via a capacitance, wherein the capacitance connected to the adjacent pixel is greater than a capacitance connected to the normal pixel

A solid-state imaging element includes a pixel including a first imaging element, a second imaging element, a third imaging element, and an on-chip micro lens. The first imaging element includes a first electrode, a third electrode, and a second electrode. The pixel further includes a third electrode control line VOA connected to the third electrodeand a plurality of control linesB connected to various transistors included in the second and third imaging elements and different from the third electrode control line VOA. In the pixel, a distance between the center of the on-chip micro lensincluded in the pixel and any one of the plurality of control linesB included in the pixel is shorter than a distance between the center of the on-chip micro lensincluded in the pixel and the third electrode control line VOA included in the pixel.

Imaging element, laminated imaging element, and solid-state imaging device

There is provided a solid-state imaging device including a substrate having a pixel array unit sectioned into a matrix, a plurality of normal pixels, a plurality of phase difference detection pixels, and a plurality of adjacent pixels adjacent to the phase difference detection pixels, each provided in each of the plurality of sections, in which each of the normal pixel, the phase difference detection pixel, and the adjacent pixel has a photoelectric conversion film, and an upper electrode and a lower electrode that sandwich the photoelectric conversion film in a thickness direction of the photoelectric conversion film, and the lower electrode, in the adjacent pixel, extends from the section in which the adjacent pixel is provided to cover the section in which the phase difference detection pixel adjacent to the adjacent pixel is provided, when viewed from above the substrate.

Solid-state imaging device and electronic apparatus for miniturization of pixels and improving light detection sensitivity

Imaging device having a plurality of electrodes with a photoelectric conversion layer forming a photoelectric conversion unit

Provided is a solid-state imaging element including a plurality of pixels that includes at least two phase difference detection pixels for focus detection. Each pixel has a stacked structure including a plurality of photoelectric conversion elements that are stacked on top of each other and absorb light beams different in wavelength from one another to generate electrical charges, and each phase difference detection pixel includes, in the stacked structure, a color filter that partially covers an upper face of one of the photoelectric conversion elements and absorbs a light beam with a specific wavelength.

Solid-state imaging element, method for manufacturing solid-state imaging element, and electronic apparatus

Imaging element, stacked type imaging element and solid-state imaging apparatus

Imaging device having first, second and third electrodes with an insulating material and a photoelectric conversion layer and driving method for imaging device having the same, and electronic apparatus

Imaging element, stacked-type imaging element, solid-state imaging device, and driving method for solid-state imaging device

The present technology relates to an imaging element, a driving method of an imaging element, and an electronic device capable of preventing deterioration in image quality. The imaging element reads a first signal in a state where a charge holding unit is reset, reads a second signal in a state where a reset transistor is turned off, reads a third signal in a state where charges obtained by photoelectric conversion are accumulated in the charge holding unit, reads a fourth signal in a state where the charge holding unit is reset, and sets a reset signal to an intermediate voltage between an on voltage and an off voltage before the reset signal to a gate electrode of the reset transistor is switched from the on voltage to the off voltage after the first signal is read, and generates a noise signal by correlated double sampling of the first signal and the second signal, generates a data signal by correlated double sampling of the third signal and the fourth signal, and generates an output signal by correlated double sampling of the data signal and the noise signal. The present technology is applied to, for example, an imaging element.

Imaging element, driving method of imaging element, and electronic device

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Kanagawa, Japan

Yoshihiro Ando