Seiko Epson Corporation

Yoshihiko Yokoyama

Yasuaki Hamada

Takayuki Yonemura

Takashi Yamazaki

Akihiko Ebina

Tomoyuki Kamakura

Osamu Kawauchi

Hideo Miyasaka

Yoshihide Nishiyama

A resonance device includes a first substrate formed of a semiconductor material or a glass material and having a recess which has an opening in a first main surface, a second substrate bonded to the first main surface and configured to close the opening of the recess, and a resonator element housed in the recess. An inner surface of the recess includes a side surface, a bottom surface, and a connection surface connecting the side surface and the bottom surface, the connection surface is a curved surface, and L1&#x3c;L2, wherein L1 is a length of the connection surface in a first direction, and L2 is a length in a second direction orthogonal to the first direction.

Resonance device, oscillator, resonance module, electronic device and vehicle

A MEMS element includes a surface silicon layer on which an element is formed and on which a first electrode and a second electrode as element electrodes and an electrode pad connected to the first electrode and the second electrode are disposed, and in which a first wiring through-hole is disposed at a position overlapping with the electrode pad of the surface silicon layer and a wiring electrode electrically connected to the electrode pad is disposed in the first wiring through-hole, in plan view.

MEMS element, sealing structure, electronic device, electronic apparatus, and vehicle

An electronic apparatus includes: a base; a functional element; and a first member and a second member which connect the base and the functional element to each other. The first member and the second member have different elastic moduli from each other. The elastic modulus of the first member is higher than the elastic modulus of the second member. At least a part of the first member is situated more closely to a center of the functional element than the second member, as viewed in a plan view taken from a direction in which the base and the functional element are arrayed.

Wearable biological information sensing device

A method of forming a stacked wiring includes forming a first adhesion layer on a substrate, forming a first wiring on the first adhesion layer, etching the first adhesion layer and the first wiring by the same first wet etching so that the first wiring is in a reverse trapezoid shape in which a first width of a top surface is larger than a second width of a bottom surface contacting the first adhesion layer as a cross-section in a direction intersecting with a first wiring extending direction, covering the top surface and a side surface of the first wiring with a second adhesion layer, forming a second wiring on the second adhesion layer, and etching the second adhesion layer and the second wiring by the same second wet etching so that the second adhesion layer and the second wiring remain on only the top surface of the first wiring.

Method of forming stacked wiring

A photoelectric conversion element includes a first electrode, a ferroelectric layer provided on the first electrode, and a second electrode provided on the ferroelectric layer, the second electrode being a transparent electrode, and a pn junction being formed between the ferroelectric layer and the first electrode or the second electrode.

Photoelectric conversion element and method of manufacturing the same

A solid state imaging device includes: solid state imaging elements having a first electrode, a ferroelectric layer, and a transparent second electrode laminated together, and a PN junction between the ferroelectric layer and the first or second electrode; a controller acquiring brightness information of an imaging target, and determining whether each solid state imaging element is set to operate in a high or low sensitivity mode based on the brightness information; and a circuit applying a voltage to the solid state imaging element based on the determination, and setting the solid state imaging element to operate in the high or low sensitivity mode, in which a photovoltaic current from the solid state imaging element which is set to operate in the high or low sensitivity mode is detected, and an image is acquired based on the detection result.

Solid state imaging device and image acquisition method using solid state imaging elements having a PN junction

A droplet discharge head includes: a vibrating plate on which first and second terminals are formed; a reservoir forming substrate bonded to the vibrating plate and including a first inclined surface as a side surface on which a first wiring electrically connected to the first terminal is formed and that is inclined to a plate surface; and a wiring substrate bonded to the vibrating plate and including a second inclined surface as a side surface on which a second wiring electrically connected to the second terminal is formed and that is inclined to a plate surface along the first inclined surface.

Wiring structure, droplet discharge head, and droplet discharge apparatus

A semiconductor device includes: a connecting body including a connecting electrode; and at least one semiconductor chip stacked on the connecting body, the semiconductor chip including: a substrate; and a trans-substrate conductive plug that penetrates the substrate, the trans-substrate conductive plug having a first terminal that is provided on an active surface side of the substrate; and a second terminal that is provided on a back surface side that is opposite the active surface side, an outer shape of the first terminal being formed larger than an outer shape of the second terminal, wherein the second terminal of the semiconductor chip is electrically connected to a connecting electrode of the connecting body via a brazing material.

Growing community of inventors

Chino, Japan

Yoshihiko Yokoyama