Tdk Corporation

The Westaim Corporation

Other

Ifire IP Corporation

Tok Corporation

Yoshihiko Yano

Takao Noguchi

Katsuto Nagano

Tomoyuki Oike

Yasunobu Oikawa

Hitoshi Saita

Kenichi Yoshida

Daiki Ishii

Yuki Yamashita

Masaki Takahashi

Tetsuhiro Takahashi

Yukihiko Shirakawa

Tatsuo Namikawa

Naruki Kataoka

Hiroyasu Inoue

Kenji Horino

Masashi Miwa

Junji Aotani

Hisatoshi Saitou

Hidenori Abe

Noboru Miura

Koichi Terunuma

Shigeaki Tanaka

Suguru Takayama

Jun Hirabayashi

Tohru Inoue

Taku Takeishi

Yukio Kawaguchi

Mutsuko Nakano

Akira Shibue

Yukihiro Azuma

Masahiro Yamaki

Mitsuhiro Kawanishi

A thin film capacitor includes: a metal foil having a roughened upper surface; a dielectric film covering the upper surface of the metal foil and having an opening through which the metal foil is partly exposed; a first electrode layer contacting the metal foil through the opening; a second electrode layer contacting the dielectric film without contacting the metal foil; and an insulating member separating the first and second electrode layers. The insulating member has a tapered shape in cross section. With the above configuration, both the first and second electrode layers can be disposed on the upper surface of the metal foil. In addition, since the insulating member has a tapered shape in cross section, adhesion performance of the insulating member can be enhanced, thus making it possible to prevent short-circuit between the first and second electrode layers.

Thin film capacitor, its manufacturing method, and electronic circuit substrate having the thin film capacitor

To provide a thin film capacitor in which peeling-off of an electrode layer is less likely to occur. A thin film capacitor includes a metal foil having a roughened upper surface, a dielectric film covering the upper surface of the metal foil and having an opening for partly exposing the metal foil therethrough, a first electrode layer contacting the metal foil through the opening and further contacting the dielectric film, and a second electrode layer contacting the dielectric film without contacting the metal foil. With this configuration, both the first and second electrode layers can be disposed on the upper surface of the metal foil. In addition, the first electrode layer contacts not only the metal foil but also the dielectric film, making peeling of the first electrode layer less likely to occur.

Thin film capacitor and electronic circuit substrate having the same

A thin film capacitor includes: a metal foil having a roughened upper surface; a dielectric film covering the upper surface of the metal foil and having an opening through which the metal foil is partly exposed; a first electrode layer contacting the metal foil through the opening; a second electrode layer contacting the dielectric film without contacting the metal foil; and an insulating member provided on the upper surface of the metal foil to surround the first and second electrode layers. The metal foil has an outer peripheral area which is positioned outside an area surrounded by the insulating member and which is not covered with the first and second electrode layers. A height of the electrode layer is equal to or higher than a height of the insulating member. This makes the outer peripheral portion of the thin film capacitor have a step-like shape.

To provide a thin film capacitor having high adhesion with respect to a circuit substrate. A thin film capacitor includes: a metal foil having a roughened upper surface; a dielectric film covering the upper surface of the metal foil and having an opening through which the metal foil is partly exposed; a first electrode layer contacting the metal foil through the opening; and a second electrode layer contacting the dielectric film without contacting the metal foil. An angle θa formed by the other main surface of the metal foil and a side surface thereof is more than 20° and less than 80°. The side surface is thus tapered at an angle of more than 20° and less than 80°, so that it is possible to suppress warpage and to enhance adhesion with respect to a multilayer substrate when the thin film capacitor is embedded in the multilayer substrate.

To provide a thin film capacitor in which warpage is less likely to occur. A thin film capacitor includes: a metal foil having roughened upper and lower surfaces; a dielectric film covering the upper surface of the metal foil and having an opening through which the metal foil is partly exposed; a dielectric film covering the lower surface of the metal foil and made of a dielectric material having a thermal expansion coefficient smaller than that of the metal foil; a first electrode layer contacting the metal foil through the opening; and a second electrode layer contacting the first dielectric film without contacting the metal foil. The lower surface of the metal foil is thus covered with the dielectric film having a small thermal expansion coefficient, thereby making it possible to prevent the occurrence of warpage.

To provide a thin film capacitor having high adhesion performance with respect to a multilayer substrate. A thin film capacitor includes: a metal foil having a roughened upper surface; a dielectric film covering the upper surface of the metal foil and having an opening through which the metal foil is partly exposed; a first electrode layer contacting the metal foil through the opening; and a second electrode layer contacting the dielectric film without contacting the metal foil. A height of the first electrode layer is lower than a height of the second electrode layer. This enhances adhesion performance when the thin film capacitor is embedded in a multilayer substrate and improves ESR characteristics.

In a thin film capacitor, a first electrode layerhas one or more regions B in which a distance Hbetween a boundary surface I of the first electrode layerand a dielectric layer, and a surface of the first electrode layer, becomes maximum, and an outer layerhas one or more regions T in which a distance Hbetween the boundary surface I and a surface of the outer layerbecomes maximum, as well as one or more regions t in which the distance Hbetween the boundary surface I and the surface of the outer layerdoes not become maximum. A projected area S, a projected area S, and a projected area S, satisfy equations (1) and (2):60%&#x2264;()&#x2003;&#x2003;(1);60%&#x2264;()&#x2003;&#x2003;(2).

Thin film capacitor having an outer layer including a second conductor layer

A stacked film is a stacked film including an oxide film, and a metal film provided on the oxide film, in which the oxide film includes a ZrOfilm of which a main surface is a (001) plane, the metal film includes a Pt film or a Pd film that has a single orientation and of which a main surface is a (001) plane, and a [100] axis of the ZrOfilm and a [100] axis of the metal film are parallel to an interface between the oxide film and the metal film, and the axes of both are parallel to each other.

Stacked film, electronic device substrate, electronic device, and method of fabricating stacked film

A thin-film capacitor includes a pair of electrode layers composed of a first electrode layer configured to store positive charges and a second electrode layer configured to store negative charges; and a dielectric layer sandwiched between the pair of electrode layers along a lamination direction. The first electrode layer includes a first main electrode layer in contact with the dielectric layer. The second electrode layer includes a second main electrode layer and a second sub-electrode layer, both of which are formed of different metallic materials. The second sub-electrode layer is sandwiched between the dielectric layer and the second main electrode layer along the lamination direction. The second main electrode layer is formed of a material having a melting point lower than both a melting point of a material of the first electrode layer, or the first main electrode layer, and that of a material of the second sub-electrode layer.

Thin-film capacitor and electronic component embedded substrate

The electronic device sheet comprises a pair of electrode layers, a dielectric layer provided between the pair of electrode layers, and one or more insulation patch members provided on one of principal surfaces of the dielectric layer, wherein the number of the insulation patch members is 1 or more and 1000 or less per 1 cmof the principal surface, and the total area of the insulation patch members is 10 &#x3bc;mor larger and 3 mmor smaller per 1 cmof the principal surface.

Electronic device sheet having insulation patch member on dielectric layer

A thin film capacitor comprises a base material, a dielectric layer provided on the base material, and an upper electrode layer provided on the dielectric layer. The dielectric layer includes a plurality of columnar crystals that extend along a normal direction with respect to a surface of the upper electrode layer. The columnar crystal has a perovskite crystal structure represented by ABO. An element A is at least one of Ba, Ca, Sr, and Pb, and an element B is at least one of Ti, Zr, Sn, and Hf. Further, y&#x2266;0.995 is satisfied, and the dielectric layer contains 0.05 to 2.5 mol of Mg per 100 mol of ABO.

Thin film capacitor

A thin film capacitor comprises a base material, a dielectric layer provided on the base material, and an upper electrode layer provided on the dielectric layer. The dielectric layer includes a plurality of columnar crystals that extend along a normal direction with respect to a surface of the upper electrode layer, the columnar crystal has a perovskite crystal structure represented by ABO, an element A is at least one of Ba, Ca, Sr, and Pb, an element B is at least one of Ti, Zr, Sn, and Hf, y&#x2266;0.995 is satisfied, and the dielectric layer contains 0.05 to 2.5 mol of Al per 100 mol of ABO.

A thin film capacitor includes: a laminated body in which a dielectric layer and an upper electrode layer are successively laminated on a base electrode; a protective layer that covers a part of the base electrode, the dielectric layer and the upper electrode layer and includes a through-hole respectively on the base electrode and on the upper electrode layer; and terminal electrodes that are electrically connected with the base electrode and the upper electrode layer through the through-holes of the protective layer. A modulus of longitudinal elasticity (Young's modulus) of the protective layer is 0.1 GPa to 2.0 GPa.

A thin film capacitor is provided with a lower electrode layer, a dielectric layer arranged on the lower electrode layer, and an upper electrode layer formed on the dielectric layer. An insulator patch material, circular when projected from above, is formed at a boundary of the dielectric layer and the upper electrode layer of the thin film capacitor of this invention. The circular insulator patch improves a withstand voltage, by reducing accumulation of charges.

A thin film capacitor includes a lower electrode layer, a dielectric layer that is provided on said lower electrode layer, and an upper electrode layer that is formed on the dielectric layer. Wherein, the lower electrode layer contains at least a Ni electrode layer, the upper electrode layer configured with at least two layers of a Ni electrode layer and a Cu electrode layer, and the dielectric layer is in contact with both the Ni electrode layer of the lower electrode layer and the Ni electrode layer of the upper electrode layer.

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Tokyo, Japan

Yoshihiko Yano