Sumitomo Chemical Company, Limited

Mie University

Yoshihiko Tsuchida

Yasushi Iyechika

Yoshinobu Ono

Sadanori Yamanaka

Masaya Shimizu

Masahiko Hata

Tomoyuki Takada

Kazumasa Hiramatsu

Kazumasa Ueda

Hideto Miyake

Naohiro Nishikawa

Yasuyuki Kurita

Makoto Sasaki

Yuichi Hiroyama

Toshihisa Katamine

A method for producing a group 3-5 nitride semiconductor includes the steps of (i), (ii), (iii) in this order: (i) placing inorganic particles on a substrate, (ii) epitaxially growing a semiconductor layer by using the inorganic particles as a mask, and (iii) separating the substrate and the semiconductor layer by irradiating the interface between the substrate and the semiconductor layer with light; and a method for producing a light emitting device further includes adding electrodes.

Method for producing group 3-5 nitride semiconductor and method for producing light-emitting device

A group 3-5 nitride semiconductor multilayer substrate () and a method for manufacturing such substrate are provided. A semiconductor layer () is formed on a base substrate (), and a mask () is formed on the semiconductor layer (). Then, after forming a group 3-5 nitride semiconductor crystalline layer () by selective growing, the group 3-5 nitride semiconductor crystalline layer () and the base substrate () are separated. The crystallinity of the semiconductor layer () is lower than that of the group 3-5 nitride semiconductor crystalline layer ().

Group 3-5 nitride semiconductor multilayer substrate, method for manufacturing group 3-5 nitride semiconductor free-standing subtrate, and semiconductor element

A monolithic light-emitting device and driving method therefore includes a plurality of light-emitting diodes, array-arranged monolithically on a single substrate. The light-emitting diodes include a pn junction-containing semiconductor material and a phosphor-containing layer passing light emitted from the semiconductor material, absorbing part, or whole of the light for conversion into light having a different wavelength. The array is constituted of a light-emitting diode group consisting of m (m&#x2267;2) pieces of the light-emitting diode, the light emitting diode group being constituted of N types (N&#x2267;2, providing N&#x2266;m) of light-emitting diodes, each having either one of preset N types of light-emitting spectrum patterns. An average light-emitting spectrum from the whole array can be changed by regulating a power supplied to the light-emitting diodes for each light-emitting diode group sorted according to the type of the light-emitting spectrum pattern.

Monolithic light emitting device and driving method therefor

A group III-V compound semiconductor comprising a single quantum well structure which has two barrier layers and a quantum well layer represented by the formula: InGaAlN (wherein x+y+z=1, 0&#x3c;x&#x3c;1, 0&#x3c;y&#x3c;1, and 0&#x2266;z&#x3c;1) between the barrier layers, wherein a multiple quantum well structure having repeatedly the barrier layers and the quantum well layer is formed, a ratio of an average mole fraction of InN in the multiple quantum well layer, which is measured by x-ray diffraction, to a mole fraction of InN calculated from a wavelength of light emitted from the group III-V compound semiconductor due to current injection is not more than 42.5%.

Compound semiconductor and method for producing same

In order to improve light-emission efficiency without degrading protection performance of a light-emitting layer structure a three p-type layer structure composed of first to third layers is provided in contact with a light-emitting layer structure. The first layer is an n-type AlGaN layer that serves as a protective layer, the third layer is a GaN:Mg layer that serves as a contact layer and the second layer is an AlGaN:Mg layer formed between these layers as an intermediate layer. The provision of the intermediate layer enables an InGaN layer to be thoroughly protected from heat during growth of layers above even if the n-type AlGaN layer is made thin, whereby the GaN:Mg layer can be brought near the light-emitting layer structure to enhance the efficiency of hole injection into the light-emitting layer structure and thus increase the light-emission efficiency.

Method for producing and epitaxial substrate for compound semiconductor light-emitting device

Provided is an excellent p-type nitride type 3-5 group compound semiconductor having escellent electrical properties such as a low contact resistance to an electrode metal, a low ohmic property, etc., by heat-treating a nitride type 3-5 group compound semiconductor doped with p-type dopant in an hydrogen-containing gas atmosphere of a specific concentration.

3-5 group compound semiconductor, process for producing the same, and compound semiconductor element using the same

A group 3&#x2013;5 compound semiconductor comprising an interface of two layers having lattice mismatch, an intermediate layer having a film thickness of 25 nm or more and a quantum well layer, in this order. The compound semiconductor has high crystallinity and high quality, and suitably used for a light emitting diode.

Group 3-5 compound semiconductor and light emitting diode

Epitaxial substrate for compound semiconductor light-emitting device, method for producing the same and light-emitting device

In a semiconductor manufacturing system for manufacturing compound semiconductor by MOCVD, a lead-in member is provided for guiding feed gas supplied from a feed gas supply unit onto the surface of a semiconductor substrate disposed in a reactor, a main body of the lead-in member is constituted as a hollow member to form a feed gas guide passage for conducting the feed gas in an prescribed direction and is formed with multiple orifices, and the feed gas in the feed gas guide passage is jetted from the orifices in a direction perpendicular to the prescribed direction so that the semiconductor substrate is bathed in a feed gas flow of uniform amount jetted from the lead-in member in this manner. Furthermore, a pressure differential produced between the inner side and outer side of the nozzle member enables the feed gas jetted from the nozzle member to flow over the whole surface of the substrate at a uniform flow rate. The multiple feed gases are led to the vicinity of the substrate individually and the blow gas blows the multiple feed gases toward the substrate to favorably from desired thin film crystal.

Method and system for manufacturing III-V Group compound semiconductor and III-V Group compound semiconductor

Provide is a 3-5 group compound semiconductor having a concentration of a p-type dopant of 1&times;10 cm or more and 1&times;10 cm or less, which can be laminated to control the carrier concentration of an InGaAlN-type mixed crystal in a low range with high reproducibility. Also provided is a 3-5 group compound semiconductor in which the carrier concentration of an InGaAlN-type mixed crystal is controlled in a low range with high reproducibility, and a light emitting device having high light emitting efficiency.

Growing community of inventors

Tsukuba, Japan

Yoshihiko Tsuchida