Asahi Kasei Emd Corporation

Asahi Kasei Microdevices Corporation

Yoshihiko Shibata

Masatoshi Miyahara

Takashi Ikeda

Hiromi Fujita

Yoshihisa Kunimi

Obtaining control conditions through trial and error is inefficient. Provided is a learning processor including a control condition acquiring section that acquires control condition data indicating a control condition of a film deposition apparatus; a film characteristic acquiring section that acquires film characteristic data indicating a characteristic of a film deposited by the film deposition apparatus that has been caused to operate according to the control condition indicated by the control condition data; and a learning processing section that performs learning processing of a model that outputs recommended control condition data indicating the control condition of the film deposition apparatus that is recommended in response to input of target film characteristic data indicating a target film characteristic, using learning data that includes the acquired control condition data and film characteristic data.

Learning processor, learning processing method, production method of compound semiconductor, and recording medium

A method for manufacturing the compound semiconductor substrate having a reduced dislocation density at an interface between a Si substrate. Contaminants, such as organic matter and metal, on a surface of a Si substrate are removed whereby a flat oxide film is formed. The oxide film on the surface is removed by using an aqueous hydrogen fluoride solution, whereby hydrogen termination treatment is performed. Immediately after being subjected to the hydrogen termination treatment the temperature of the Si substrate is raised in a vacuum apparatus. If the substrate temperature is raised without any operation, the termination hydrogen is released. Before the hydrogen is released, pre-irradiation with As is performed. Thus, an interface between the Si substrate and the compound semiconductor layer is prepared. Several minutes later, irradiation with Ga and As is performed. Thereby, the compound semiconductor is formed.

Compound semiconductor substrate and method for manufacturing the same

The present invention relates to a compound semiconductor lamination that enables an InSb film to be formed on an Si substrate and enables development of applications to magnetic sensors, such as Hall elements, magneto-resistance elements, etc., optical devices, such as infrared sensors, etc., and electronic devices, such as transistors, etc., to be provided industrially, and a method for manufacturing the compound semiconductor lamination. An active layer, which is a compound semiconductor that does not contain As, is directly formed on an Si substrate. As is present at an interface of the active layer and a single crystal layer of the Si substrate. The compound semiconductor contains at least nitrogen. The compound semiconductor is a single crystal thin film. The Si substrate is a bulk single crystal substrate or a thin film substrate with an uppermost layer being Si.

Growing community of inventors

Tokyo, Japan

Yoshihiko Shibata